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Gallium nitride based devices set to bring substantial boost to power efficiency

Gallium nitride has long been known to have useful properties when it comes to electronic components. Even so, its application has largely been confined to more exotic areas of the industry, particularly rf transistors. But GaN is beginning to find application in what could be considered the mainstream, with some of its proponents suggesting its arrival could mark the beginning of the end for the traditional power mosfet. By: Graham Pitcher New Electronics December 13, 2011 Read the article Read more
Categories: GaN Market News

Efficient Power Conversion Corporation (EPC) Market Leading eGaN® FET Receives EDN China Innovation Leading Product Award

EL SEGUNDO, Calif. – December, 2011 - Efficient Power Conversion Corporation ( announces today that it has been recognized with a Leading Product Award by EDN China Innovation Award 2011 in its Power Device and Module category. In its seventh year, the EDN China Innovation Award 2011 is the benchmark event for recognizing product innovation by China’s electronics design engineers and managers. “It is an honor to receive this recognition as an industry leading product from EDN China. The EPC2010 is one member of our family of eGaN FETs being adopted by ... Read more
Categories: Press Releases