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Although, for the last few years, there has been a lot of talk about gallium nitride(GaN) based power transistors displacing the entrenched silicon MOSFETs, it might take some time before the emerging gallium nitride on silicon (GaN-on-Si) based power FETs enter the mainstream power conversion space. However, in the meantime, a handful of emerging applications are poised to tap the benefits of this promising power technology. Besides commercial availability with high reliability, there are a number of unique GaN characteristics that are fostering these new applications.
Innovations are engineers’ intellectual properties. To promote and support engineers’ innovative designs with gallium nitride FETs, EE Times Taiwan and Efficient Conversion Corporation join hands in staging the “GaN Transistors for Efficient Power Conversion – Design Contest”.
The aim is to provide an exchange platform for participating engineers to use ANY EPC’s eGaN FETs in designing:
a. a DC-DC power conversion solution OR
b. Class D or Class E audio solution
Any participant can submit their own or their teams’ design solution in ...
Written by industry experts, “GaN Transistors for Efficient Power Conversion” provides both theory and applications for gallium nitride transistors
EL SEGUNDO, Calif. – November 2012 - Efficient Power Conversion Corporation (www.epc-co.com) announces the publication of a Simplified Chinese edition of its gallium nitride transistor textbook, “GaN Transistors for Efficient Power Conversion”. This textbook provides power system design engineers basic technical and application-focused information on how to design more efficient power conversion systems using ...