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Microsemi announces partnership with EPC

Microsemi is working with Efficient Power Conversion (EPC) in the development of a complete line of high performance FETS for high reliability space and military applications. A jointly researched paper entitled "Enhancement Mode Gallium Nitride Characteristics Under Long Term Stress" will be presented at the Government Microcircuit Applications and Critical Technology Conference (GOMAC), March 21-24, 2011 in Orlando, Florida. The study covers the reliability testing results and demonstrates the stability of the devices at temperature and under radiation ... Read more
Categories: Press Releases

Alex Lidow, CEO, interviewed in ECN's Tinker’s Toolbox

Alex Lidow is interviewed by ECN's Editorial Director, Alix Paultre, on the Tinker's Toolbox, ECN's audio interview website.  The interview explores the attributes of GaN technology, applications opened as a result of GaN's superior performance to MOSFETs and reasons for the take-up of eGaN FET products over the past year.

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Categories: Interviews

Efficient Power Conversion Corporation (EPC) Selected as Finalist in Prestigious 2011 EE Times ACE Awards Competition

EL SEGUNDO, Calif-March 15, 2011 — Efficient Power Conversion Corporation (EPC) has been named a finalist in the EE Times 2011 Annual Creativity in Electronics (ACE) Awards ( These annual awards celebrate the creators of technology who demonstrate leadership and innovation in the global industry and shape the world we live in. EPC has been recognized as a finalist within the Energy Technology Award category. This new category recognizes companies that have made the most significant contribution through the introduction of new concepts and ... Read more
Categories: Press Releases
Tags: Awards

Efficient Power Conversion Corporation (EPC) Introduces Two Industry Leading Lead-Free and RoHS Compliant eGaN™ FETs

EL SEGUNDO, Calif. - March 15, 2011 - Efficient Power Conversion Corporation ( announce the introduction of the EPC2001 and EPC2015, two lead-free, RoHS-compliant (Restriction of Hazardous Substances) enhancement-mode gallium nitride on silicon (eGaN™) FETs. The EPC2001 FET is a 100 VDS device with a maximum RDS(ON) of 7 milliohms with 5 V applied to the gate, and the EPC2015 is a 40 VDS with a maximum RDS(ON) of 4 milliohms. Both eGaN FETs provide significant performance advantages over similar state-of-the-art silicon-based power MOSFETs. Both devices have low on ... Read more
Categories: Press Releases