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By: Steve Taranovich, EDN
March 15, 2013
As the race toward leadership in the power element continues to evolve, industry experts have said that by mid-2013 about half a dozen GaN, Si, and SiC suppliers will reveal process enhancements, new architectures, and the latest new capabilities that will bring new choices and tools to the industry. http://www.edn.com/design/power-management/4409627/1/Si-vs--GaN-vs--SiC--Which-process-and-supplier-are-best-for-my-power-design-
Author: By Alix Paultre, Editorial Director, PSD
In this podcast, we talk to Alex Lidow of Efficient Power Conversion (EPC) about GaN devices and their impact on the power industry. EPC is a leader in enhancement-mode Gallium Nitride based power management devices. EPC was the first to introduce enhancement-mode Gallium-Nitride-on-Silicon (eGaN®) FETs as power MOSFET replacements in applications such as point-of-load converters, Power over Ethernet (PoE), server and computer DC-DC converters, LED lighting, cell phones, RF transmission, solar micro-inverters, and ...
EPC9010 development board features dedicated eGaN driver to facilitate rapid design of high frequency switching power conversion systems using the 100 V EPC2016 eGaN FET
EL SEGUNDO, Calif.— February, 2012 — Efficient Power Conversion Corporation (EPC) introduces the EPC9010 development board to make it easier for engineers to start designing with a 100 V enhancement-mode gallium nitride (eGaN) field effect transistor (FET) in applications such as high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high frequency ...
Designers of point of load (POL) converters used in 24 VDC systems traditionally have had to decide between the high cost of an isolated converter and the low frequency and efficiency of a buck converter. When compared with the 12 V POL converter common in computing systems, the higher voltage of the 24 V POL converter increases FET voltage to at least 40 volts to accommodate switch-node ringing and increases commutation and COSS losses. eGaN FETs, from EPC, offer ultra-low QGD for low commutation losses and low QOSS for lower losses when charging and discharging the output capacitance. In ...
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The ability of enhancement mode gallium nitride based power devices, such as the eGaN® FET, to achieve higher efficiencies and higher switching frequencies than possible with silicon MOSFETs has been demonstrated for a variety of applications. With improvements in switching figure of merit provided by eGaN FETs, the packaging and PCB layout parasitics are critical to high performance. This first part of this article will study the effect of parasitic inductance on performance for eGaN FET and MOSFET based point of load (POL) buck converters operating at a switching frequency of 1 MHz, ...