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Alex Lidow, EPC CEO and co-founder, will be presenting results of a newly released family of enhancement mode (GaN®) HEMT transistors designed for high frequency operation into the 10 MHz range. The presentation will also highlight the stability of these devices under radiation exposure making them an ideal choice for high reliability applications.
EL SEGUNDO, Calif. — March, 2014 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power transistors will be presenting at the 39th Annual Government ...
Alex Lidow, EPC's CEO, is interviewed by Don Tuite, editor of Electronic Design, about EPC's new and novel applications for its eGaN FET.
EPC's Michael de Rooij presenting the Wireless Power Transfer demonstration for Alix Paultre, editor, Power Systems Design magazine.
Power Systems Design
Yole Développement is releasing, this week, the "GaN-on-Si Substrate Technology and Market for LED and Power Electronics" report. Analysts believe that GaN-on-silicon technology will be widely adopted by power electronics applications. The power electronics market addresses applications such as AC to DC or DC to AC conversion, which is always associated with substantial energy losses that increase with higher power and operating frequencies. Incumbent silicon based technology is reaching its limit and it is difficult to meet higher requirements. ...
EPC experts will be making technical presentations on GaN FET technology at three industry-leading conferences in Asia – Electronica China, IIC China Power Management and Semiconductor and International Workshop on Wide Band Gap Power Electronics 2014 in Taiwan
EL SEGUNDO, Calif. — March, 2014 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power transistors will be making presentations at three industry-leading power conferences in Asia.
At two conferences in Shanghai, China on March ...
Development boards in half-bridge topology with onboard gate drives simplify evaluation of the EPC8000 family of ultra high frequency, high performance eGaN® FETs now available from EPC.
EL SEGUNDO, Calif.— March 2014 — Efficient Power Conversion Corporation (EPC) introduces a family of development boards, the EPC9022 through EPC9030, to simplify evaluation of the groundbreaking EPC8000 family of ultra high frequency eGaN power transistors.
The EPC8000 family of high frequency eGaN FETs has switching transition speeds in the sub-nanosecond range, making them capable ...
Since the Robotics and Mechatronics Institute is highly interested in the improvement of sensor and power electronics, we used the opportunity of this new robot development to evaluate the new enhancement mode Gallium Nitride FET technology from EPC and compare it with our up to this time best inverter design.
Bodo’s Power Systems
By Robin Gruber, German Aerospace Center (DLR)