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Efficient Power Conversion (EPC) to Present DC-DC Converter Using eGaN® Transistors Operating at 10 MHz with 89% Peak Efficiency and the Ability to Operate in Harsh Environmental Conditions at GOMACTe

Alex Lidow, EPC CEO and co-founder, will be presenting results of a newly released family of enhancement mode (GaN®) HEMT transistors designed for high frequency operation into the 10 MHz range. The presentation will also highlight the stability of these devices under radiation exposure making them an ideal choice for high reliability applications. EL SEGUNDO, Calif. — March, 2014 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power transistors will be presenting at the 39th Annual Government ... Read more
Categories: Press Releases

Yole: Power To Dominate GaN-On-Silicon Market

Yole Développement is releasing, this week, the "GaN-on-Si Substrate Technology and Market for LED and Power Electronics" report. Analysts believe that GaN-on-silicon technology will be widely adopted by power electronics applications. The power electronics market addresses applications such as AC to DC or DC to AC conversion, which is always associated with substantial energy losses that increase with higher power and operating frequencies. Incumbent silicon based technology is reaching its limit and it is difficult to meet higher requirements. ... Read more
Categories: GaN Market News

Efficient Power Conversion (EPC) Experts to Demonstrate How eGaN FETs Increase Efficiency by 20% in Wireless Power Applications at Key Power Industry Conferences in Asia

EPC experts will be making technical presentations on GaN FET technology at three industry-leading conferences in Asia – Electronica China, IIC China Power Management and Semiconductor and International Workshop on Wide Band Gap Power Electronics 2014 in Taiwan EL SEGUNDO, Calif. — March, 2014 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power transistors will be making presentations at three industry-leading power conferences in Asia. At two conferences in Shanghai, China on March ... Read more
Categories: Press Releases

Efficient Power Conversion (EPC) Introduces Development Boards With Switching Transition Speeds in the Sub-Nanosecond Range and Capable of Hard-Switching Applications Above 10 MHz

Development boards in half-bridge topology with onboard gate drives simplify evaluation of the EPC8000 family of ultra high frequency, high performance eGaN® FETs now available from EPC. EL SEGUNDO, Calif.— March 2014 — Efficient Power Conversion Corporation (EPC) introduces a family of development boards, the EPC9022 through EPC9030, to simplify evaluation of the groundbreaking EPC8000 family of ultra high frequency eGaN power transistors. The EPC8000 family of high frequency eGaN FETs has switching transition speeds in the sub-nanosecond range, making them capable ... Read more
Categories: Press Releases

Comparison of Silicon Versus Gallium Nitride FETs for the Use in Power Inverters for Brushless DC Servo Motors

Since the Robotics and Mechatronics Institute is highly interested in the improvement of sensor and power electronics, we used the opportunity of this new robot development to evaluate the new enhancement mode Gallium Nitride FET technology from EPC and compare it with our up to this time best inverter design.

Bodo’s Power Systems
By Robin Gruber, German Aerospace Center (DLR)
March, 2014

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Categories: Articles