News

Sign up today to get the latest news and updates from EPC on new product announcements, applications work, and much more. Sign up for EPC email updates or text "EPC" to 22828.

EPC Introduces 100 V eGaN Power Transistor for 48 V DC-DC, Motor Drives, and Lidar Applications

EPC Introduces 100 V eGaN Power Transistor for 48 V DC-DC, Motor Drives, and Lidar Applications
The EPC2052 offers power systems designers a 100 V, 13.5 mΩ, power transistor capable of 74 A pulsed in an extremely small chip-scale package.  In a 48 V – 12 V DC-DC Power Converters these new generation eGaN FETs achieved greater than 97% efficiency at 500 kHz and greater than 96% Efficiency at 1 MHz EL SEGUNDO, Calif. — March 2019 — Efficient Power Conversion (EPC) announces the EPC2052, a 100 V GaN transistor with a maximum RDS(on) of 13.5mΩ and a 74 A pulsed output current for high efficiency power conversion in a tiny 2.25mm2 footprint. Read more
Categories: Press Releases

It's Time to Rethink Power Semiconductor Packaging

It's Time to Rethink Power Semiconductor Packaging

When the issue invariably turns to the packaging of the power semiconductor – transistor, diode, or integrated circuit – the requests for improvement fall into six categories:

1. Can you make the package smaller?
2. Can you reduce the package inductance?
3. Can you make the product with lower conduction losses?
4. Can you make the package more thermally efficient?
5. Can you sell the product at a lower price?
6. Can you make the package more reliable?

Read more
Categories: Articles

Efficient Power Conversion (EPC) Meeting with Engineers at Key Industry Exhibitions Continuing the Journey to Unleash the Power of GaN

Efficient Power Conversion (EPC) Meeting with Engineers at Key Industry Exhibitions Continuing the Journey to Unleash the Power of GaN

As part of its continuous support to a widening customer base for DC-DC, LiDAR, wireless power applications and beyond, EPC continues its innovation journey by meeting with engineers in key industry exhibitions worldwide in March and April 2019.

EL SEGUNDO, Calif. - March 2019 — EPC experts are available to meet with innovative engineers interested in incorporating GaN into their designs at key industry exhibitions worldwide in March and April 2019.

Read more
Categories: Press Releases

Powering graphics processors from a 48-V bus

Powering graphics processors from a 48-V bus
New converter topologies and power transistors promise to reduce the size and boost the efficiency of supplies that will run next-generation Artificial Intelligence (AI) platforms. In all the topologies with 48 VIN, the highest efficiency comes with using GaN devices. This is due to their lower capacitance and smaller size. With recent pricing declines in GaN power transistors, the cost comparison with silicon-based converters now strongly favors GaN in all the leading-edge solutions. Power Electronic Tips March, 2019 Read article Read more
Categories: Articles

Efficient Power Conversion (EPC) to Showcase Industry-Leading Performance in High Power Density DC-DC Conversion and Multiple High-Frequency Applications Using eGaN Technology at APEC 2019

Efficient Power Conversion (EPC) to Showcase Industry-Leading Performance in High Power Density DC-DC Conversion and Multiple High-Frequency Applications Using eGaN Technology at APEC 2019
EPC will exhibit live demonstrations showing how GaN technology’s superior performance is transforming power delivery for entire industries including computing, communications, and automotive. EL SEGUNDO, Calif. — March 2019 — The EPC team will be delivering eleven technical presentations on gallium nitride (GaN) technology and applications at APEC 2019 in Anaheim, California from March 17th through the 21st. In addition, the company will demonstrate its latest eGaN FETs and ICs in customers’ end products that are enabled by eGaN technology. Read more
Categories: Press Releases

The Power and Evolution of GaN, Part 6: GaN Technology Adoption and Roadmap

The Power and Evolution of GaN, Part 6: GaN Technology Adoption and Roadmap
In the final installment of this series, how GaN has met the requirements to displace silicon is explored. As the adoption rate of GaN explodes, it is important to remember that, while GaN has made many advancements in just a few short years, it is still far from its theoretical performance limitations and thus there are profound improvements that can continue to be achieved. In time, the performance and cost advantages of GaN-on-silicon will result in a majority of applications currently using silicon-based devices converting to the smaller, faster, cheaper, and more reliable GaN ... Read more
Categories: Articles
RSS

Archive