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Dedicated Driver Squeezes Optimal Performance Out Of Enhancement-Mode GaN FETs

We know Efficient Power Conversion (EPC) has commercialized enhancement-mode GaN-on-Si FETs, or eGaN FETs as EPC calls them, for more than a year now. Concurrently, it has been working with partners to realize dedicated drivers for its eGaN FETs, which offer lower RDS(ON) at higher voltages, lower gate charge, and no reverse recovery loss (QRR)—all these properties from a smaller die size than silicon. In essence, by comparison to silicon MOSFETs, the eGaN FETs offer a dramatic reduction in figures of merit or FOM. By Ashok Bindra How2Power June, 2011 Read the article Read more
Categories: GaN Market News

National Semiconductor Introduces Industry’s First 100V Half-bridge Gate Driver for Enhancement-mode Gallium-Nitride Power FETs

National Semiconductor Corp. (NYSE:NSM) today introduced the industry’s first 100V half-bridge gate driver optimized for use with enhancement-mode Gallium-Nitride (GaN) power field-effect transistors (FETs) in high-voltage power converters. Enhancement-mode GaN FETs enable new levels of efficiency and power density compared to standard metal-oxide semiconductor field-effect transistors (MOSFETs) due to their low on-resistance (Rdson) and gate charge (Qg) as well as their ultra-small footprint, but driving them reliably presents significant new challenges. National’s LM5113 ... Read more
Categories: Press Releases

Efficient Power Conversion Corporation (EPC) Introduces Industry-Leading Second Generation 200 Volt Enhancement Mode Gallium Nitride (eGaN®) Power Transistor

EPC2010 delivers high frequency switching with enhanced performance in lead-free, RoHS compliant package. EL SEGUNDO, Calif. – June 2011 - Efficient Power Conversion Corporation ( announces the introduction of the EPC2010 as the newest member of EPC’s second-generation enhanced performance eGaNfield effect transistor (FET) family. The EPC2010 is environmentally friendly, being both lead-free and RoHS-compliant (Restriction of Hazardous Substances). The EPC2010 FET is a 200 VDS device with a maximum RDS(ON) of 25 milliohms with 5 V applied to the gate. This ... Read more
Categories: Press Releases

Efficient Power Conversion (EPC) Introduces Development Board for Fast Development of Power Conversion Circuits and Systems Using Enhancement Mode Gallium Nitride (eGaN®) FETs

EPC9003 facilitates rapid design of high frequency switching power conversion systems based upon the 200 V EPC2010 with ready-made, easy to connect development board and well-documented engineering support materials. EL SEGUNDO, Calif.—June 2011 — Efficient Power Conversion Corporation (EPC) today announced the introduction of the EPC9003 development board to make it easier for users to start designing with EPC’s 200V enhancement-mode gallium nitride (eGaN) field effect transistor (FET) in applications such as solar microinverters, class D audio amplifiers, Power over ... Read more
Categories: Press Releases