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EPC9107 demonstrates size reduction and efficiency enhancement for power conversion achieved using high frequency switching eGaN power transistors
EL SEGUNDO, Calif.—June, 2013 — Efficient Power Conversion Corporation (EPC) introduces the EPC9107, a fully functional buck power conversion demonstration circuit. This board is a 9 V-28 V input to 3.3 V, 15 A maximum output current, 1MHz buck converter. It uses the EPC2015< eGaN FET in conjunction with the LM5113 100V half-bridge gate driver from Texas Instruments. The EPC9107 demonstrates the reduced size and ...
Since gallium nitride (GaN) based power devices have a vast potential to grow in usage, this market opportunity continues to attract more new suppliers. As a result, the list of manufacturers of GaN technology based power devices is steadily expanding. How2Power June, 2013 More ...
Packaging has its downsides: It increases the footprint and the price of a power MOSFET, while degrading its performance through unwanted increases in resistance and inductance. The best solution is to ditch the package, a step that allows GaN HEMTs to be cost-competitive with silicon incumbents, argues Alex Lidow from Efficient Power Conversion Corporation.
Alex Lidow to author a monthly column in eeWeb.com entitled “How to GaN,” addressing a range of technical issues related to gallium nitride (GaN) technology including its application in power conversion and management.
EL SEGUNDO, Calif.—June 2013— Efficient Power Conversion Corporation proudly announces that beginning in June, Alex Lidow, EPC co-founder and CEO, will author a monthly column on the online website eeWeb.com, a leading website for electrical engineers.
The column, “How to GaN,” will begin with discussions on the basic principles of ...
In a featured interview with EEWeb Pulse EPC’s CEO, Alex Lidow, discusses what steps need to be taken to help with wide adoption of GaN devices.
The first installment in a new monthly column by Alex Lidow, CEO of EPC, introduces the concept that GaN-on-silicon power devices could be a superior replacement for the aging power MOSFET.
By: Alex Lidow
Even though the eGaN FET was designed and optimized as a power-switching device, it also exhibits good RF characteristics. This article, the first of a two-part series on RF performance, focuses on RF characterization in the frequency range of 200 MHz through 2.5 GHz.
By: Michael de Rooij, Ph.D., Executive Director of Applications Engineering, Efficient Power Conversion
Johan Strydom, Ph.D., Vice President of Applications, Efficient Power Conversion
Matthew Meiller, President, Peak Gain Wireless
Read the article