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This installment will address an eGaN® FET module designed as a way for power conversion systems designers to easily evaluate the exceptional performance of gallium nitride transistors.
By: Alex Lidow
The superior characteristics of eGaN® FETs, such as low output capacitance, low input capacitance, low parasitic inductances, and small size make them ideal for increasing efficiency in highly resonant, Rezence (A4WP) compliant, wireless power transfer systems.
EL SEGUNDO, Calif.—June, 2014 — Efficient Power Conversion Corporation (EPC) today announce the introduction of demonstration boards for wireless power transfer in an innovative high performance topology; Zero Voltage Switching (ZVS) Class-D. The EPC9506 and EPC9507 amplifier (source) boards utilize the high ...
EPC enhancement-mode gallium nitride (eGaN®) power transistors recognized by leading industry trade journal as displacement technology for the venerable silicon MOSFET
EL SEGUNDO, Calif. – June, 2012 – Efficient Power Conversion Corporation (www.epc-co.com) has been recognized with a EDN China 10th Anniversary Innovation Award for Leading Technology in the Most Influential Technology for the Future category. The EDN China Innovation Award is a benchmark for recognizing technology, product, and company innovation by the voting of electronics design engineers and managers ...
Overall, 2020 could see an estimated device market size of almost $600M, leading to approximately 580,000 x 6” wafers to be processed. Ramp-up will be quite impressive starting in 2016, at an estimated 80% CAGR through 2020, based upon a scenario where EV/HEV begins adopting GaN in 2018-2019. The power supply/PFC segment will dominate the business from 2015-2018, ultimately representing 50% of device sales. At that point, automotive will then catch-up.
Gallium Nitride (GaN) based power devices are rapidly being adopted due to their ability to operate at frequencies and switching speeds beyond the capability of Silicon power devices.
Power Electronics Europe
By: Alex Lidow, Ph.D., Johan Strydom, Ph.D., David Reusch, Ph.D.
Dr. Glaser will be creating benchmark power converter designs and assisting customers in the use of eGaN FETs® for high frequency, high performance power conversion systems
EL SEGUNDO, Calif.—June 2014 — Efficient Power Conversion Corporation (EPC) is proud to announce that Dr. John Glaser has joined the EPC engineering team as Director, Applications Engineering.
As a member of the EPC applications team, Dr. Glaser’s focus will be on designing lower loss and higher power density benchmark architectures and converters that demonstrate the benefits of using ...
At PCIM Asia conference in Shanghai, China, an EPC applications expert will demonstrate the superiority of GaN transistors compared to silicon power MOSFETs in wireless energy transfer applications.
EL SEGUNDO, Calif. — June, 2014 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power transistors will be presenting an application-focused presentation at PCIM Asia highlighting the efficiency advantage of using eGaN FETs in wireless power transfer. The conference will be held in Shanghai, China from ...
According to the latest report from Yole Développement, the GaN power industry is set for significant growth in the future.
June 12, 2014
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Yole Développement interviewed Dr. Alex Lidow, CEO and co-founder of Efficient Power Conversion (EPC).
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