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EPC and Spirit Electronics to Provide Data Packs for eGaN Power Devices

EPC and Spirit Electronics to Provide Data Packs for eGaN Power Devices

Efficient Power Conversion (EPC,) in partnership with Spirit Electronics, will provide manufacturing lot-specific data services for their industry-leading gallium nitride-based power devices.

EL SEGUNDO, Calif.— June 2019 — EPC announces a partnership with Spirit Electronics to provide an expanded range of manufacturing lot-specific data services for their industry-leading enhancement-mode gallium nitride (GaN) devices

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Categories: Press Releases

GaN Makes a Frontal Attack on Silicon Power MOSFETS

GaN Makes a Frontal Attack on Silicon Power MOSFETS
Today’s GaN FETs are improving rapidly in size and performance. The benchmark devices are still 300 times away from their theoretical performance limits. The early GaN adopters needed the speed. Big examples were lidar systems for autonomous cars, drones, and robots, and 4G/LTE base stations. The volume has grown, and now GaN power devices are at a point where the prices are equivalent to the slower, bigger and aging power MOSFET. Thus, it is time for GaN’s frontal assault! Bodo’s Power Systems June 2019 Read article Read more
Categories: Articles

EPC to Provide eGaN Power Devices in Wafer Form

EPC to Provide eGaN Power Devices in Wafer Form

Efficient Power Conversion (EPC) will provide their industry-leading gallium nitride-based power devices in wafer form for ease of power systems integration.

EL SEGUNDO, Calif.— June 2019 — EPC announces the availability of their industry-leading enhancement-mode gallium nitride (GaN) devices in wafer form for ease of integration.  EPC’s eGaN® FETs and ICs are traditionally sold as singulated chip-scale devices with solder bars or solder bumps. 

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Categories: Press Releases
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