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Ismosys now represents EPC’s European sales, marketing, and technical support to assist customers in adopting eGaN® FETs and ICs for leading-edge power conversion systems using gallium nitride
EL SEGUNDO, Calif.—July 2016 — To support its accelerating growth throughout Europe, Efficient Power Conversion Corporation (EPC) is proud to announce the appointment of Ismosys as its sales, marketing, and technical support representative. Ismosys, founded in 1994, provides support to design houses, designers and engineers across Europe. This is achieved through 10 ...
In this PSDcast Alex Lidow, CEO and Co-founder of Efficient Power Conversion, talks to Alix Paultre of Power Systems Design about the state of GaN development. Now that the industry has finally embraced what GaN can do with multiple vendors and solutions, we are now seeing real design-ins and products based on GaN power devices.
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Power Systems Design
July 21, 2016
In this slidecast, Alexander Lidow from EPC describes how the company is leading a technological revolution with Gallium Nitride (GaN). More efficient than silicon as a basis for electronics, GaN could save huge amounts of energy in the datacenter and has the potential to fuel the computer industry beyond Moore’s Law.
July 20, 2016
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EPC’s new value-added partnership with ASD aims to support customer designs from conception to manufacturing of eGaN® technology-based wireless power charging and other emerging applications.
EL SEGUNDO, Calif.— July 2016 — Efficient Power Conversion Corporation (EPC), Los Angeles-based innovator in gallium nitride (eGaN) technology for replacing MOSFET technology, has joined forces with ASD Technology Limited (ASD), a Hong-Kong-based company delivering best-in-class customer solutions for applications using the latest eGaN technology.
GaN-based FETs are disrupting the power conversion market and are displacing silicon-based metal–oxide–semiconductor field-effect transistors (MOSFETs). Compared to MOSFETs, GaN FETs operate much faster and have higher switching speeds in the smallest possible volume. The promise of GaN is that it can dramatically reduce the size and weight of any power supply. To reach their performance potential, these high-performance GaN transistors need an optimized gate driver.
July 12, 2016
The first two installments in this series reported in detail on field reliability experience of Efficient Power Conversion (EPC) Corporation’s enhancement-mode gallium nitride (eGaN®) FETs and integrated circuits (ICs). The excellent field reliability of eGaN devices demonstrates stress-based qualification testing is capable of ensuring reliability in customer applications. In this installment we will examine the stress tests that EPC devices are subjected to prior to being considered qualified products.
July 9, 2016
Silicon Valley's namesake raw material faces a promising new rival: gallium nitride (GaN). Some say the newcomer is poised to swarm the $30 billion semiconductor power supply market. It's a market that involves "anything that plugs into a wall" ranging from Apple (AAPL) iPhone chargers to Tesla Motors' (TSLA) luxury electric cars.
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