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Efficient Power Conversion Corporation (EPC) Achieves ISO 9001:2008 Certification for Quality Management

EPC has received ISO certification for the design, development, marketing and sales of gallium nitride power transistors and power management devices EL SEGUNDO, Calif. – September 2011 - Efficient Power Conversion Corporation ( the leader in energy-efficient enhancement mode gallium nitride (eGaN®) power transistors used in power conversion applications, has received the International Organization for Standardization ISO 9001:2008 certification for its quality management system. The ISO standards are published by the International Organization for ... Read more
Categories: Press Releases

Efficient Power Conversion (EPC) Introduces EPC9006 Development Board Featuring Enhancement Mode Gallium Nitride (eGaN®) FETs

EPC9006 facilitates rapid design of high frequency switching power conversion systems based on the 100 V EPC2007 with a ready-made and easy-to-connect development board including well-documented engineering support materials. EL SEGUNDO, Calif.—September, 2011 — Efficient Power Conversion Corporation (EPC) introduces the EPC9006 development board to make it easier for engineers to start designing with a 100 V enhancement-mode gallium nitride (eGaN) field effect transistor (FET) in applications such as high-speed DC-DC power supplies, point-of-load converters, class D audio ... Read more
Categories: Press Releases

Efficient Power Conversion Corporation (EPC) Expands eGaN® FET Family with Second Generation 100 Volt, 30 milliohm Power Transistor

EPC2007 delivers high frequency switching with enhanced performance in lead-free, RoHS compliant package. EL SEGUNDO, Calif. – September, 2011 - Efficient Power Conversion Corporation ( announces the introduction of the EPC2007 as the newest member of EPC’s second-generation enhanced performance eGaN FET family. The EPC2007 is environmentally friendly; being lead free, RoHS-compliant (Restriction of Hazardous Substances), and halogen free. The EPC2007 FET is a 1.87 mm2, 100 VDS, 6 A device with a maximum RDS(ON) of 30 milliohms. This second generation eGaN ... Read more
Categories: Press Releases