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Efficient Power Conversion Corporation (EPC) Market Leading eGaN® FET Receives Top 10 Power Products Award from Electronic Products China
EL SEGUNDO, Calif. – September, 2012 - Efficient Power Conversion Corporation (www.epc-co.com) announces that its EPC9102 has been recognized by Electronic Products China with a Top 10 Power Products Award – Technology Breakthrough Award.
In this article, we show that high electron densities and very low temperature coefficients give the eGaN FET major advantages over the power MOSFET needed for today’s high performance applications. High electron density yields superior RDS(ON), while positive temperature coefficients inhibit hot spot generation within the die, resulting in superior Safe Operating Area capabilities.
By Yanping Ma, Ph.D., Director of Quality, EPC
Bodo's Power Systems
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eGaN FETs exhibit a positive temperature coefficient across their entire operating range, thus overcoming a performance limitation of the silicon MOSFET.
EL SEGUNDO, Calif.—September 2012 — Efficient Power Conversion Corporation (EPC) is releasing safe operating area (SOA) data for their entire product line of eGaN FETs. The positive temperature coefficient across virtually their entire operating range allows a square SOA limited only by average device temperature.
The advantages provided by eGaN FETs in hard switching isolated and non-isolated applications have been addressed previously. Here, we demonstrate the ability of the eGaN FET to improve efficiency and output power density in a soft switching application, compared to what is achievable with existing power MOSFET devices.
By David Reusch, Ph.D., Director of Applications, EPC
Power Electronics Technology
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