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EPC Introduces 100 V eGaN Power Transistor for High Power Density Power Conversion and Lidar Applications

EPC Introduces 100 V eGaN Power Transistor for High Power Density Power Conversion and Lidar Applications

The EPC2070 offers power systems designers a 100 V, 23 mΩ, power transistor capable of 34 A pulsed in an extremely small chip-scale package.  These new devices are ideal for applications such as 60 W, 48 V power converters, Lidar, and LED lighting.

EL SEGUNDO, Calif. — December 2021 — Efficient Power Conversion (EPC) announces the EPC2070, a 100 V GaN transistor with a maximum RDS(on) of 23 mΩ and a 34 A pulsed output current for high efficiency power conversion in a tiny 1.1mm2 footprint.

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Low-Cost Motors Match Premium Motor Drive Performance with eGaN FETs for eBikes, eMotion, Drones, and Robots

Low-Cost Motors Match Premium Motor Drive Performance with eGaN FETs for eBikes, eMotion, Drones, and Robots

The EPC9145 GaN-based inverter enhances the performance of the motor for range, precision, torque, and, as a bonus, eliminates the electrolytic capacitors for lower overall system cost and higher reliability. The extremely small size allows integration into the motor housing for the lowest EMI, highest density, and lowest weight.

EL SEGUNDO, Calif.— November, 2021 — EPC announces the availability of the EPC9145, a 1 kW, 3-phase BLDC motor drive inverter using the EPC2206 eGaN® FET

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EPC21601 eToF Laser Driver IC Wins ASPENCORE’s World Electronics Achievement Award – Product of the Year 2021 Power Semiconductor / Driver IC

EPC21601 eToF Laser Driver IC  Wins ASPENCORE’s World Electronics Achievement Award –  Product of the Year 2021 Power Semiconductor / Driver IC

November 3, 2021 - Efficient Power Conversion Corporation (EPC), the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs and ICs, has won the Product of the Year 2021 – Power Semiconductor/Driver IC of the prestigious World Electronics Achievement Awards (WEAA) for EPC21601 eToF™ Laser Driver IC.

The WEAA scheme honors products that have made outstanding contributions to the innovation and development of the electronics industry worldwide. A committee comprising of ASPENCORE global senior industry analysts and online users worldwide select the winners. ASPENCORE is the largest electronics industry media and SaaS group in the world featuring media titles including EE Times and EDN.

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EPC Launches 2 kW, 48 V/12 V DC-DC Demonstration Board for More Efficient, Smaller, Faster, Bidirectional Converters for Mild-Hybrid Cars

EPC Launches 2 kW, 48 V/12 V DC-DC Demonstration Board for More Efficient, Smaller, Faster, Bidirectional Converters for Mild-Hybrid Cars

The EPC9163 is a two-phase, 48 V – 12 V bidirectional converter that delivers 2 kW with 96.5% efficiency in small solution size for mild-hybrid cars and battery power backup units.

EL SEGUNDO, Calif.— November, 2021 — EPC announces the availability of the EPC9163, a 2 kW, two-phase 48 V – 12 V bidirectional converter that operates with 96.5 % efficiency in a very small footprint. The design of this demonstration board is scalable; that is, two converters can be paralleled to achieve 4 kW or three converters can be paralleled to achieve 6 kW. The board features eight EPC2218 100 V eGaN® FETs and is controlled by a module that includes the Microchip dsPIC33CK256MP503 16-bit digital controller.

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40 V eGaN FET Ideal for High Power Density Telecom, Netcom, and Computing Solutions Now Available from EPC

40 V eGaN FET Ideal for High Power Density Telecom, Netcom, and Computing Solutions Now Available from EPC

EPC introduces the 40 V, 1.3 milliohm EPC2067 eGaN® FET offering designers a device that is smaller, more efficient, and more reliable than MOSFETs for high-performance, space-constrained applications.

EL SEGUNDO, Calif. — October 2021 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, expands the selection of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2067 (1.3 mΩ typical, 40 V) eGaN FET. 

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EPC’s 50 W, 12 V to 60 V eGaN FET-based Boost Converter Provides an Efficient, Simple, Low-cost Solution for Laptop and PC Monitor Backlighting

EPC’s 50 W, 12 V to 60 V eGaN FET-based Boost Converter Provides an Efficient, Simple, Low-cost Solution for Laptop and PC Monitor Backlighting

A 50 W, 12 V to 60 V eGaN® FET-based synchronous boost converter achieves 95.3% peak efficiency with low temperature rise with a simple, low-cost topology.

EL SEGUNDO, Calif.— October, 2021 — EPC announces the availability of the EPC9162, a bi-directional buck or reverse-boost converter.  This demonstration board features the 100 V EPC2052 for the synchronous converter, and the EPC2038 in the synchronous bootstrap FET circuit. 

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New Textbook, GaN Power Devices and Applications from Efficient Power Conversion (EPC) Now Available

New Textbook, GaN Power Devices and Applications from Efficient Power Conversion (EPC) Now Available

GaN devices and applications, such as lidar, DC-DC conversion, motor drive, and low-cost satellites using gallium nitride FETs and ICs, form the focus of this book, GaN Power Devices and Applications.

EL SEGUNDO, Calif. — October 2021 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, announces the publication of a valuable learning resource for professional engineers, systems designers, and electrical engineering students seeking the latest information on gallium nitride technology and applications. 

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Efficient Power Conversion (EPC) and innosonix Address Power Consumption and Overall Efficiency Demands for High-end Audio Amplifier Application with eGaN FET Design

Efficient Power Conversion (EPC) and innosonix Address Power  Consumption and Overall Efficiency Demands for High-end Audio Amplifier Application with eGaN FET Design

EL SEGUNDO, Calif. — September 2021 — Idle power consumption and overall efficiency were key concerns of innosonix GmBH when designing its latest high-end Maxx Series multi-channel power amplifier. By changing from traditional silicon FETs to EPC’s EPC2059 eGaN FET the company reduced idle loss by 35% and lowered the on resistance to increase the total power efficiency by 5%.

The EPC2059 is a 6.8 mΩ, 170 V enhancement-mode gallium nitride (eGaN) transistor offering superior audio performance for high-end amplifier applications. The low on resistance and low capacitance of the EPC2059 enables high efficiency and lowers open loop impedance for low Transient Intermodulation Distortion (T-IMD). The fast-switching capability and zero reverse recovery charge enable higher output linearity and low cross over distortion for lower Total Harmonic Distortion (THD).

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Efficient Power Conversion (EPC) Expands 40 V eGaN FET Product Line with Device Ideal for High Power Density Telecom, Netcom, and Computing Solutions

Efficient Power Conversion (EPC) Expands 40 V eGaN FET Product Line with Device Ideal for High Power Density Telecom, Netcom, and Computing Solutions

EPC introduces the 40 V, 1.6 milliohm EPC2069 eGaN® FET, offering designers a device that is smaller, more efficient, and more reliable than currently available devices for high performance, space-constrained applications.

EL SEGUNDO, Calif. — September 2021 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, advances the performance capability of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2069 (1.6 mΩ typical, 40 V) eGaN FET. 

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EPC Expands High-Performance eGaN FET Product Family with Latest 80 V and 200 V Offerings

EPC Expands High-Performance eGaN FET Product Family with Latest 80 V and 200 V Offerings

These new generation eGaN® FETs address the new needs of the eMobility, delivery and logistic robot, and drone markets for compact BLDC motor drives and cost-effective high-resolution Time of Flight.

EL SEGUNDO, Calif.— June, 2021 — EPC, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, advances the performance capability while lowering the cost for off-the-shelf gallium nitride transistors with the introduction of EPC2065 and EPC2054

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Efficient Power Conversion (EPC) Announces New Family of Radiation-Hardened Enhancement-Mode Gallium Nitride (eGaN) Transistors and Integrated Circuits for Demanding Space Applications

Efficient Power Conversion (EPC) Announces New Family of Radiation-Hardened Enhancement-Mode Gallium Nitride (eGaN) Transistors and Integrated Circuits for Demanding Space Applications

Efficient Power Conversion (EPC) introduces a new family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions in critical spaceborne and other high reliability environments.

EL SEGUNDO, Calif.— June 2021 — EPC announces the introduction of a new family of radiation-hardened gallium nitride transistors and integrated circuits. With higher breakdown strength, faster switching speed, higher thermal conductivity and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices. The lower resistance and gate charge enable faster power supply switching frequencies resulting in higher power densities, higher efficiencies, and more compact and lighter weight circuitry for critical spaceborne missions. Gallium nitride is also inherently radiation tolerant, making GaN-based devices a reliable, higher performing power transistor option for space applications.

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EPC to Showcase High Power Density Solutions Using eGaN FETs and ICs in Volume Applications at APEC 2021 Virtual Conference + Exposition

EPC to Showcase High Power Density Solutions Using eGaN FETs and ICs in Volume Applications at APEC 2021 Virtual Conference + Exposition

Efficient Power Conversion (EPC) will showcase the company’s latest enhancement-mode gallium nitride-based FETs and ICs demonstrating how GaN technology’s superior performance is transforming power delivery for high power density computing, automotive, eMobility, and robotics.

EL SEGUNDO, Calif.— June 2021 — The EPC team will be delivering multiple technical presentations, an educational tutorial, and an exhibitor webinar on gallium nitride (GaN) technology and applications at the upcoming Applied Power Electronics Conference (APEC) Virtual Conference + Exposition, June 14-17. In addition, the company will participate in the event’s virtual exhibition, showing its latest eGaN® FETs and ICs in customers’ end products that are rapidly adopting eGaN technology.

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EPC’s 1 kW, 48 V to 12 V LLC Power Conversion Demonstration Board Delivers Best-in-Class Power Density of 1226 W/in3

EPC’s 1 kW, 48 V to 12 V LLC Power Conversion Demonstration Board Delivers Best-in-Class Power Density of 1226 W/in3

Delivering the power of a quarter brick in the size of an eighth brick, the EPC9149 uses eGaN® FETs switching at 1 MHz for extreme power density to deliver 1 kW of power.

EL SEGUNDO, Calif.— May, 2021 — EPC announces the availability of the EPC9149, a 1 kW-capable 48 V input to 12 V output LLC converter that operates as a DC transformer with a conversion ratio of 4:1. This demonstration board features the 100V EPC2218 and 40 V EPC2024 GaN FETs.

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EPC Launches Scalable 1.5 kW 48 V/12 V DC-DC Demonstration Board Powered by Gallium Nitride (GaN) FETs for More Efficient, Smaller, Faster, Bidirectional Converters

EPC Launches Scalable 1.5 kW 48 V/12 V DC-DC Demonstration Board Powered by Gallium Nitride (GaN) FETs for More Efficient, Smaller, Faster, Bidirectional Converters

The EPC9137 is a two-phase 48 V – 12 V bidirectional converter that delivers 1.5 kW with 97% efficiency in small solution size for mild-hybrid cars and battery power backup units.

EL SEGUNDO, Calif.— May, 2021 — EPC announces the availability of the EPC9137, a 1.5 kW, two-phase 48 V – 12 V bidirectional converter that operates with 97 % efficiency in a very small footprint. The design of this demonstration board is scalable; that is, two converters can be paralleled to achieve 3 kW or three converters can be paralleled to achieve 4.5 kW. The board features four EPC2206 100 V eGaN® FETs and is controlled by a module that includes the Microchip dsPIC33CK256MP503 16-bit digital controller.

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EPC Launches 400 W Motor Drive Demonstration Powered by Gallium Nitride (GaN) Integrated Power Stage for More Efficient, Quieter, and Smaller Motors

EPC Launches 400 W Motor Drive Demonstration Powered by Gallium Nitride (GaN) Integrated Power Stage for More Efficient, Quieter, and Smaller Motors

The EPC2152 ePower™ Stage enables higher performance and smaller solution size for high performance, low-cost BLDC motors as demonstrated in the EPC9146 demonstration board.

EL SEGUNDO, Calif.— May, 2021 — EPC announces the availability of the EPC9146, a 400 W motor drive demonstration. The EPC9146 power board contains three independently controlled half bridge circuits, featuring the EPC2152 monolithic ePower™ Stage with integrated gate driver, 80 V maximum device voltage, 15 A (10 ARMS) maximum output current. The inverter board measures just 81 mm x 75 mm and achieve an efficiency of greater than 98.4% at 400 W output power.

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EPC to Showcase High Power Density eGaN FETs and ICs in Volume Customer Applications at PCIM Europe 2021 Digital Days

EPC to Showcase High Power Density eGaN FETs and ICs in Volume Customer Applications at PCIM Europe 2021 Digital Days

Efficient Power Conversion (EPC) will showcase the company’s latest enhancement-mode gallium nitride-based FETs and ICs demonstrating how GaN technology’s superior performance is transforming power delivery for automotive, computing, and robotics at the PCIM Europe 2021 Digital Days.

EL SEGUNDO, Calif.— April 2021 — The EPC team will be delivering two technical presentations, an educational tutorial, an exhibitor webinar, and participating in panel discussions on gallium nitride (GaN) technology and applications at the upcoming PCIM Europe 2021 Digital Days, May 3 – 7. In addition, the company will participate in the event’s virtual exhibition, showing its latest eGaN FETs and ICs in customers’ end products that are rapidly adopting eGaN® technology.

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Efficient Power Conversion (EPC) Receives Elektra Award 2020 for Semiconductor Product of the Year (Analogue) for ePower Stage IC

Efficient Power Conversion (EPC) Receives Elektra Award 2020 for Semiconductor Product of the Year (Analogue) for ePower Stage IC

Efficient Power Conversion (EPC) announces that the EPC2152 ePower™ Stage IC has received the 2020 Elektra Award for Semiconductor Product of the Year (Analogue).

EL SEGUNDO, Calif.— March 2021 — EPC’s ePower™ stage, EPC2152 Integrated Circuit (IC), has been honored with an Elektra Award 2020 in the Semiconductor Product of the Year – Analogue category. The award presentation was announced on March 25th during a virtual awards ceremony hosted by Electronics Weekly. These prestigious annual awards have been running for over 19 years to reward and recognize companies and individuals for their excellent performance, innovation, and contribution to the global electronics industry. Judging is carried out by an independently and unbiased, diverse, and knowledgeable panel of industry experts.

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Efficient Power Conversion (EPC) Expands eToF Laser Driver IC Family of Products with Device Optimized for Augmented Reality

Efficient Power Conversion (EPC) Expands eToF Laser Driver IC Family of Products with Device Optimized for Augmented Reality

Efficient Power Conversion (EPC) announces the expansion of its new gallium nitride (GaN) integrated circuit (IC) product family offering higher performance and smaller solution size for time-of-flight (ToF) lidar applications including robotics, drones, 3D sensing, gaming, and autonomous cars.

EL SEGUNDO, Calif.— March 2021 — EPC announces the introduction of a laser driver that integrates a 40 V, 10 A FET with a gate driver and low-voltage differential signaling (LVDS) logic level input in a single chip for time-of-flight lidar systems used in robotics, drones, augmented reality, and gaming applications.

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Lidar Demonstration Board Drives Lasers with Currents up to 220 A with Under 3-ns Pulses using eGaN FETs

Lidar Demonstration Board Drives Lasers with Currents up to 220 A with Under 3-ns Pulses using eGaN FETs

The ultra-fast transition EPC2034C eGaN® FETs used on the EPC9150 enables high current pulses up to 220 A and pulse widths under 3 ns, thus allowing a lidar system to see farther, faster, and better.

EL SEGUNDO, Calif.— March 2021 — Efficient Power Conversion  (EPC) announces the availability of the EPC9150, a 200 V, high current, pulsed-laser diode driver demonstration board. In a lidar system, used to create 3-D maps for autonomous vehicle applications, speed and accuracy of object detection is critical. As demonstrated by this board, the rapid transition capability of the EPC2034C eGaN FETs provide power pulses to drive the laser diodes, VCSELs or LEDs up to ten times faster than an equivalent MOSFET and in a small fraction of the area, energy, and cost. Thus, enhancing the overall performance, including accuracy, precision, and processing speed as well as the price of a lidar system.

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EPC Automotive Qualified 65 V eGaN FET Enables Higher Resolution for Lidar Systems

EPC Automotive Qualified 65 V eGaN FET Enables Higher Resolution for Lidar Systems

Efficient Power Conversion (EPC) expands AEC Q101 product family with the addition of the EPC2219, 65 V gallium nitride transistor with integrated reverse gate clamp diode optimized for high resolution lidar systems.

EL SEGUNDO, Calif.— March 2021 — EPC announces successful AEC Q101 qualification of the 65 V EPC2219 designed for lidar systems in the automotive industry and other harsh environments. 

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