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The EPC2050 from Efficient Power Conversion is an Enhancement Mode GaN Power Transistor ideal for SMPS, UPS, battery management systems, etc.

The EPC2050 from Efficient Power Conversion is an Enhancement Mode GaN Power Transistor ideal for SMPS, UPS, battery management systems, etc.

The EPC2050 from Efficient Power Conversion is an Enhancement Mode GaN Power Transistor. It has a drain-source voltage of over 350 V, a drain-source on-resistance of 55 milliohms, and a gate threshold voltage of 1.3 V.

everything PE
April, 2022
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Categories: GaN Market News

GaN Application Base Widens, Adoption Grows

GaN Application Base Widens, Adoption Grows

Mature, low-cost manufacturing and proven reliability spur use in EVs, smartphones, and consumer electronics.

Efficient Power Conversion (EPC) has logged more than 100 emerging applications for its eGaN FETs and ICs. Alex Lidow, the company’s CEO, said the five fastest-growing applications are lidar systems for robotics, drones, consumer products, driver alertness systems, and autonomous vehicles; DC-DC converters for AI systems, servers, and telecom power systems; motor drives for e-mobility and robotics; satellite systems, including motor drives and DC-DC power supplies that require radiation hardness; and solar power point trackers.

Semiconductor Engineering
December, 2021
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Chipset handles 48-V DC-DC conversion in high-density computing, BLDC motor drives

Chipset handles 48-V DC-DC conversion in high-density computing, BLDC motor drives

EPC announces the introduction of a 100 V, 65 A integrated circuit chipset designed for 48 V DC-DC conversion used in high-density computing applications and in 48 V BLDC motor drives for e-mobility, robotics, and drones.

The EPC23101 eGaN IC plus EPC2302 eGaN FET offers a new ePower Chipset capable of a maximum withstand voltage of 100 V, delivering up to 65 A load current, while capable of switching speeds greater than 1 MHz.

EE World Online
December, 2021
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Categories: GaN Market News

GaN-on-Silicon Power Devices: How to Dislodge Silicon-Based Power MOSFETs

GaN-on-Silicon Power Devices: How to Dislodge Silicon-Based Power MOSFETs

Gallium nitride (GaN) power transistors designed for efficient power conversion have been in production for seven years. New markets, such as light detection and ranging, envelope tracking, and wireless charging, have emerged due to the superior switching speed of GaN. These markets have enabled GaN products to achieve significant volumes, low production costs, and an enviable reliability reputation. All of this provides adequate incentive for the more conservative design engineers in applications such as dc-dc converters, ac-dc converters, and automotive to start their evaluation process. So what are the remaining barriers to the conversion of the US$12 billion silicon power metal-oxide-semiconductor field-effect transistor (MOSFET) market? In a word: confidence. Design engineers, manufacturing engineers, purchasing managers, and senior management all need to be confident that GaN will provide benefits that more than offset the risk of adopting a new technology. Let's look at three key risk factors: supply chain risk, cost risk, and reliability risk.

IEEE Spectrum
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Podium Session at PCIM Europe Marks New Chapter in GaN Power Device Adoption

Podium Session at PCIM Europe Marks New Chapter in GaN Power Device Adoption

Senior representatives GaN power manufacturers (EPC, Transphorm, GaN Systems, Infineon and Navitas) presented details of their significant developments in moving the technology into mainstream, volume applications. Based on the information presented in the five talks, there are three significant reasons to expect dramatic growth in adoption of GaN power devices.

Bodo’s Power Systems
June 1, 2016
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Yole: Power To Dominate GaN-On-Silicon Market

Yole Développement is releasing, this week, the "GaN-on-Si Substrate Technology and Market for LED and Power Electronics" report. Analysts believe that GaN-on-silicon technology will be widely adopted by power electronics applications. The power electronics market addresses applications such as AC to DC or DC to AC conversion, which is always associated with substantial energy losses that increase with higher power and operating frequencies. Incumbent silicon based technology is reaching its limit and it is difficult to meet higher requirements.

http://powerelectronicsworld.net/article/0/79693-yole-power-to-dominate-gan-on-silicon-market.html

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EPC Addresses Global GaN Power Management Product Demand; Leverages Digi-Key for Global Distribution

Global electronic components distributor Digi-Key Corporation, the industry leader in electronic component selection, availability and delivery, today announced new inventory of Gallium Nitride (GaN) power management products, available for immediate shipment as part of an exclusive global distribution agreement with Efficient Power Conversion (EPC) http://www.digikey.com/us/en/press-release/epc-gan-global-distribution-agreement.html

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Si vs. GaN vs. SiC: Which process and supplier are best for my power design?

By: Steve Taranovich, EDN
March 15, 2013

As the race toward leadership in the power element continues to evolve, industry experts have said that by mid-2013 about half a dozen GaN, Si, and SiC suppliers will reveal process enhancements, new architectures, and the latest new capabilities that will bring new choices and tools to the industry. http://www.edn.com/design/power-management/4409627/1/Si-vs--GaN-vs--SiC--Which-process-and-supplier-are-best-for-my-power-design-

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GaN-on-Si Based FETs Foster New Applications

Although, for the last few years, there has been a lot of talk about gallium nitride(GaN) based power transistors displacing the entrenched silicon MOSFETs, it might take some time before the emerging gallium nitride on silicon (GaN-on-Si) based power FETs enter the mainstream power conversion space. However, in the meantime, a handful of emerging applications are poised to tap the benefits of this promising power technology. Besides commercial availability with high reliability, there are a number of unique GaN characteristics that are fostering these new applications.

Ashok Bindra
How2Power Today
December, 2012

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Categories: GaN Market News

Huge Expectations for GaN Market Growth

The GaN power device industry has probably generated less than $2.5M revenues in 2011, as only 2 companies (IRF & EPC Corp.) are selling products on the open market. However, the overall GaN activity has seen extra revenues as R&D contracts, qualification tests and sampling for qualified customers was extremely buoyant.

http://www.news10.com/story/17735484/power-gan-2012?clienttype=printable

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Accelerated development of eGaN FETs as silicon MOSFET come to the end of the road

With eGaN® FETs' high-performance capabilities, we have seen rapid adoption in applications for efficient DC/DC conversion, POL converters, Class D audio amplifier and high frequency circuits. Texas Instruments’ introduction of the industry's first 100V, half-bridge GaN FET driver (LM5113), optimized for use with enhancement-mode GaN (eGaN) field-effect transistors (FETs),has further propelled such an accelerated adoption pace in applications like high-performance telecom power supplies, networking and datacom centers.

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EDN China April 2012 Print Issue

EDN China April 2012

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GaN power market to rise to $10 million in 2012, says Yole

Written by Peter Clarke - 3/7/2012 2:20 PM EST

LONDON - The market for power devices implemented in gallium nitride was less than $2.5 million in 2011, according to market research firm Yole Developpement (Lyon, France). However, there is a great deal of R&D activity and Yole sees the power GaN market growing to nearly $0 million in 2012 and $500 million in 2016.

International Rectifier Corp. (El Segundo, Calif.) and Efficient Power Conversion Corp. (El Segundo, Calif.) are likely to remain the two main vendors of GaN power devices in early 2012 and the annual market is likely to say below $10 million, Yole said.

The year of 2013 should see a transition from product qualification to production for a number of GaN power chip companies as the annual market climbs to $50 million. The availability in 2015 power devices built using processes with +600-V breakdown specifications should open the market to off-mains applications by which time 12 to 15 companies should be sharing consumption of more than 100,000 6-inch equivalent wafers.

Beyond 2015 the qualification of GaN for the electric vehicle sector would allow the GaN device business to approach $1 billion in annual value, according to Philippe Roussel, power electronics business unit manager at Yole. Nonetheless that will depend on how and when automobile makers choose between silicon, silicon-carbide, and GaN technology.

A number of alternative substrates are being pursued including GaN-on-Sapphire, GaN-on-SiC, GaN-on-GaN, GaN-on-AlN and GaN-on-silicon. Yole takes the position that GaN-on-silicon is likely to dominate production as 6-inch wafers topped with 7-micron thick GaN epi are already available. Similar wafers of 200-mm diameter are under qualification and their availability will likely make this technology the economic choice, Yole said.

Some LED players, who already use GaN, are looking at GaN power as a means of diversification for their manufacturing capacity, Yole said.

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