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Efficient Power Conversion Corporation (EPC) Expands Industry-Leading Family of Enhancement Mode Gallium Nitride (eGaN®) FETs with Second Generation 200 Volt, 100 milliohm Power Transistor

EPC2012 delivers high frequency switching with enhanced performance in lead-free, RoHS compliant package.

EL SEGUNDO, Calif. – August 2011 - Efficient Power Conversion Corporation (www.epc-co.com) announces the introduction of the EPC2012 as the newest member of EPC’s second-generation enhanced performance eGaN FET family. The EPC2012 is environmentally friendly; being lead free, RoHS-compliant (Restriction of Hazardous Substances), and halogen free.

The EPC2012 FET is a 1.6 mm2 200 VDS device with a maximum RDS(ON) of 100 milliohms with 5 V applied to the gate. This eGaN FET provides significant performance advantages over the first-generation EPC1012 eGaN device. The EPC2012 has an increased pulsed current rating of 15 A (compared with 12 A for the EPC1012), is fully enhanced at a lower gate voltage, and has superior dv/dt immunity due to an improved ratio of QGD/QGS.

Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2012 is much smaller and has many times superior switching performance. Applications that benefit from eGaN FET performance include high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high frequency circuits.

“With the expansion of our family of eGaN FETs, we continue to raise the bar for the performance of gallium nitride FETs. In addition, this new generation of eGaN products are the industry’s first gallium nitride FETs to be offered as lead-free and RoHS-compliant,” said Alex Lidow, co-founder and CEO.

In 1k piece quantities, the EPC2012 is priced at $2.10 and is immediately available through Digi-Key Corporation at http://digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en

Design Support

An application note detailing the performance improvements of the EPC2012 eGaN can be found at http://epc-co.com/epc/documents/product-training/Characteristics_of_Second_Generation_eGaN_FETs.pdf

Table 1 – Summary of EPC2012 Specification Ratings

About EPC

EPC is the leader in enhancement mode Gallium Nitride based power management devices. EPC is the first to introduce enhancement-mode Gallium-Nitride-on-Silicon (eGaN) FETs as power MOSFET replacements in applications such as servers, netbooks, notebooks, LED lighting, cell phones, base stations, micro-inverters, and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. Visit our web site: www.epc-co.com.

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press contact:

Efficient Power Conversion: Joe Engle tel: 310.986.0350 email: [email protected]

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Efficient Power Conversion (EPC) Introduces Development Board for Fast Development of Power Conversion Circuits and Systems Using Enhancement Mode Gallium Nitride (eGaN®) FETs

EPC9004 facilitates rapid design of high frequency switching power conversion systems based on the 200 V EPC2012 with a ready-made, easy to connect development board and well-documented engineering support materials.

EL SEGUNDO, Calif.—August 2011 — Efficient Power Conversion Corporation (EPC) today announced the introduction of the EPC9004 development board to make it easier for users to start designing with EPC’s 200 V enhancement-mode gallium nitride (eGaN) field effect transistor (FET) in applications such as solar microinverters, class D audio amplifiers, Power over Ethernet (PoE), and synchronous rectification.

The EPC9004 development board is a 200 V maximum input voltage, 2 A maximum output current, half bridge with on board gate drives, featuring the EPC2012 200 V eGaN FET. The purpose of this development board is to simplify the evaluation process of the EPC2012 eGaN FET by including all the critical components on a single board that can be easily connected into an existing converter.

The EPC9004 development board is 2” x 1.5” and contains not only two EPC2012 GaN FETs in a half bridge configuration with gate drivers, but also an on board gate drive supply and bypass capacitors. There are also various probe points to facilitate simple waveform measurement and efficiency calculation. A Quick Start Guide, http://epc-co.com/epc/documents/guides/EPC9004_qsg.pdf, is included with the EPC9004 development board for reference and ease of use.

EPC9004 development boards are priced at $95.00 each. EPC9004, like all EPC products, are available for immediate delivery from Digi-Key at http://digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en

Design Information and Support for eGaN FETs:

About EPC

EPC is the leader in enhancement mode Gallium Nitride based power management devices. EPC was the first to introduce enhancement-mode Gallium-Nitride-on-Silicon (eGaN) FETs as power MOSFET replacements in applications such as servers, netbooks, notebooks, LED lighting, cell phones, base stations, flat-panel displays, and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. Visit our web site: www.epc-co.com.

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press Contact

Efficient Power Conversion Corporation Joe Engle, 310.986.0350 Read more

Categories: Press Releases

National Semiconductor Introduces Industry’s First 100V Half-bridge Gate Driver for Enhancement-mode Gallium-Nitride Power FETs

National Semiconductor Corp. (NYSE:NSM) today introduced the industry’s first 100V half-bridge gate driver optimized for use with enhancement-mode Gallium-Nitride (GaN) power field-effect transistors (FETs) in high-voltage power converters. Enhancement-mode GaN FETs enable new levels of efficiency and power density compared to standard metal-oxide semiconductor field-effect transistors (MOSFETs) due to their low on-resistance (Rdson) and gate charge (Qg) as well as their ultra-small footprint, but driving them reliably presents significant new challenges. National’s LM5113 driver integrated circuit (IC) eliminates these challenges, enabling power designers to realize the benefits of GaN FETs in a variety of popular power topologies.

http://www.national.com/news/en/2011june20_lm5113.html

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Efficient Power Conversion Corporation (EPC) Introduces Industry-Leading Second Generation 200 Volt Enhancement Mode Gallium Nitride (eGaN®) Power Transistor

EPC2010 delivers high frequency switching with enhanced performance in lead-free, RoHS compliant package.

EL SEGUNDO, Calif. – June 2011 - Efficient Power Conversion Corporation (www.epc-co.com) announces the introduction of the EPC2010 as the newest member of EPC’s second-generation enhanced performance eGaNfield effect transistor (FET) family. The EPC2010 is environmentally friendly, being both lead-free and RoHS-compliant (Restriction of Hazardous Substances).

The EPC2010 FET is a 200 VDS device with a maximum RDS(ON) of 25 milliohms with 5 V applied to the gate. This eGaN FET provides significant performance advantages over the first-generation EPC1010 eGaN device. The EPC2010 has an increased pulsed current rating of 60 A (compared with 40 A for the EPC1010), improved RDS(ON) at very low gate voltages, and lower capacitance.

Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2010 is smaller and has many times superior switching performance. Applications that benefit from eGaN FET performance include high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high frequency circuits.

“EPC was the first company to make gallium nitride power FETs commercially available. With our second-generation of products, we are now raising the bar for the performance of gallium nitride FETs. In addition, our new generation of eGaN products are the first gallium nitride FETs to be offered as lead-free and RoHS-compliant,” said Alex Lidow, co-founder and CEO.

In 1k piece quantities, the EPC2010 is priced at $5.06 and is immediately available through Digi-Key Corporation at http://digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en

Design Support

A development board, the EPC9003, is available to demonstrate the performance of the EPC2010 and to expedite design-in efforts. http://epc-co.com/epc/documents/datasheets/EPC2010_datasheet_final.pdf

An application note detailing the performance improvements of the EPC2010 eGaN can be found at http://epc-co.com/epc/documents/product-training/Characteristics_of_Second_Generation_eGaN_FETs.pdf

For Related Information and Support for all eGaN FETs:

 

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Categories: Press Releases

Efficient Power Conversion (EPC) Introduces Development Board for Fast Development of Power Conversion Circuits and Systems Using Enhancement Mode Gallium Nitride (eGaN®) FETs

EPC9003 facilitates rapid design of high frequency switching power conversion systems based upon the 200 V EPC2010 with ready-made, easy to connect development board and well-documented engineering support materials.

EL SEGUNDO, Calif.—June 2011 — Efficient Power Conversion Corporation (EPC) today announced the introduction of the EPC9003 development board to make it easier for users to start designing with EPC’s 200V enhancement-mode gallium nitride (eGaN) field effect transistor (FET) in applications such as solar microinverters, class D audio amplifiers, Power over Ethernet (PoE), and synchronous rectification.

The EPC9003 development board is a 200 V maximum input voltage, 5 A maximum output current, half bridge with on board gate drives, featuring the EPC2010 200V eGaN FET. The purpose of this development board is to simplify the evaluation process of the EPC2010 eGaN FET by including all the critical components on a single board that can be easily connected into any existing converter.

The EPC9003 development board is 2” x 1.5” and contains not only two EPC2010 GaN FETs in a half bridge configuration with gate drivers, but also an on board gate drive supply and bypass capacitors. There are also various probe points to facilitate simple waveform measurement and efficiency calculation. A Quick Start Guide, http://epc-co.com/epc/documents/guides/EPC9003_qsg.pdf, is included with the EPC9003 development board for reference and ease of use.

EPC9003 development boards are priced at $95.00 each. EPC9003, like all EPC products, are available for immediate delivery from Digi-Key at http://digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en

Design Information and Support for eGaN FETs:

About EPC

EPC is the leader in enhancement mode Gallium Nitride based power management devices. EPC was the first to introduce enhancement-mode Gallium-Nitride-on-Silicon (eGaN) FETs as power MOSFET replacements in applications such as servers, netbooks, notebooks, LED lighting, cell phones, base stations, flat-panel displays, and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. Visit our web site: www.epc-co.com.

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press contact: Joe Engle tel: 310.986.0350 email: < Read more

Categories: Press Releases

Efficient Power Conversion Corporation (EPC) Market Leading eGaN® Products Wins Prestigious EE Times Annual Creativity in Electronics (ACE) Award for Energy Efficiency Technology

EL SEGUNDO, Calif-May 4, 2011 — Efficient Power Conversion Corporation’s (EPC) family of enhancement-mode gallium nitride on silicon (eGaN®) power FETs has won the Energy Technology Award issued as part of the prestigious EE Times Annual Creativity in Electronics (ACE) Awards. These awards celebrate the creators of technology who demonstrate leadership and innovation in the global industry and shape the world we which we live.

“We are very proud to have won the ACE Award. This award substantiates that EPC’s enhancement-mode GaN power transistors represent a major breakthrough in power conversion technology. We believe that performance from silicon-based MOSFETs has reached the end of the road and that eGaN technology will lead the way for continued increases in performance in power management.” said Alex Lidow, EPC’s co-founder and Chief Executive Officer.

In its seventh year, the EE Times ACE Awards is a leading electronics industry recognition award selected by a panel of distinguished industry technology leaders. The awards were announced on May 3rd at an event honoring the people and companies behind the technologies that are changing the way we work, live and play. (http://www.eetimes-ace.com/home.php)

The Energy Technology Award is a new category this year recognizing those companies that have made the most significant contribution through the introduction of new concepts and products that help conserve energy or create new energy sources. EPC eGaN FETs have lower losses and higher switching frequency capabilities than power MOSFETs or IGBTs. These advantages can be applied in power conversion circuits to significantly reduce the consumption of electricity and enable greater penetration of alternative energy generation.

Spanning a range of 40 Volts to 200 Volts, and 4 milliohms to 100 milliohms, eGaN FETs demonstrate significant performance advantages over state-of-the-art silicon-based power MOSFETs. EPC’s technology produces devices that are smaller than similar resistance silicon devices and have many times superior switching performance.

Applications that benefit from this eGaN performance are DC-DC power supplies, point-of-load converters, class D audio amplifiers, notebook and netbook computers, solar microinverters, Power over Ethernet (PoE), LED drive circuits, telecom base stations, and cell phones, to name just a few.

Products based on eGaN technology are available today and are priced between $1.12 and $5.00 in 1k quantities. They are immediately available through Digi-Key Corporation at http://digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en

About EPC

EPC is the leader in enhancement mode Gallium Nitride based power management devices. EPC is the first to introduce enhancement-mode Gallium-Nitride-on-Silicon (eGaN®) FETs as power MOSFET replacements in applications such as servers, netbooks, notebooks, LED lighting, cell phones, base stations, microinverters, and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

Press contact: Joe Engle tel: 310.986.0350 email: [email protected]

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Microsemi announces partnership with EPC

Microsemi is working with Efficient Power Conversion (EPC) www.epc-co.com in the development of a complete line of high performance FETS for high reliability space and military applications. A jointly researched paper entitled "Enhancement Mode Gallium Nitride Characteristics Under Long Term Stress" will be presented at the Government Microcircuit Applications and Critical Technology Conference (GOMAC), March 21-24, 2011 in Orlando, Florida. The study covers the reliability testing results and demonstrates the stability of the devices at temperature and under radiation exposure.

Read the article

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Efficient Power Conversion Corporation (EPC) Selected as Finalist in Prestigious 2011 EE Times ACE Awards Competition

EL SEGUNDO, Calif-March 15, 2011 — Efficient Power Conversion Corporation (EPC) has been named a finalist in the EE Times 2011 Annual Creativity in Electronics (ACE) Awards (http://www.eetimes-ace.com/finalists.php). These annual awards celebrate the creators of technology who demonstrate leadership and innovation in the global industry and shape the world we live in.

EPC has been recognized as a finalist within the Energy Technology Award category. This new category recognizes companies that have made the most significant contribution through the introduction of new concepts and products that help conserve energy or create new energy sources.

EPC eGaN FETs have both lower conduction losses and are capable of much higher switching frequencies than power MOSFETs or IGBTs. These advantages of eGaN technology can be applied in power conversion circuits to significantly reduce the consumption of electricity and enable greater penetration of alternative energy generation. Highly efficient eGaN based DC-DC converters used in servers and routers enable significant energy savings in server farms. By utilizing the higher frequency capability of eGaN FETs, RF transmission power losses can be greatly reduced by employing envelope tracking in the DC-DC converter stage. eGaN technology also tilts the equation towards electric transportation by increasing vehicle range and lowering battery costs.

EPC products are distributed exclusively through Digi-Key Corporation at http://digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en

About EPC

EPC is the leader in enhancement mode Gallium Nitride based power management devices. EPC is the first to introduce enhancement-mode Gallium-Nitride-on-Silicon (eGaN™) FETs as power MOSFET replacements in applications such as servers, netbooks, notebooks, LED lighting, cell phones, base stations, micro-inverters, and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

Press contact: Joe Engle tel: 310.986.0350 email: [email protected]

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Efficient Power Conversion Corporation (EPC) Introduces Two Industry Leading Lead-Free and RoHS Compliant eGaN™ FETs

EL SEGUNDO, Calif. - March 15, 2011 - Efficient Power Conversion Corporation (www.epc-co.com) announce the introduction of the EPC2001 and EPC2015, two lead-free, RoHS-compliant (Restriction of Hazardous Substances) enhancement-mode gallium nitride on silicon (eGaN™) FETs.

The EPC2001 FET is a 100 VDS device with a maximum RDS(ON) of 7 milliohms with 5 V applied to the gate, and the EPC2015 is a 40 VDS with a maximum RDS(ON) of 4 milliohms. Both eGaN FETs provide significant performance advantages over similar state-of-the-art silicon-based power MOSFETs. Both devices have low on resistance, are smaller than silicon devices with similar resistance and have many times superior switching performance.

Applications that benefit from eGaN FET performance increases include DC-DC power supplies, point-of-load converters, class D audio amplifiers, notebook and netbook computers, LED drive circuits and telecom base stations.

“Protection of the environment is a high priority for EPC and a driving force for offering lead-free, RoHS-compliant eGaN FETs. The EPC2001 and EPC2015 are the first lead free and RoHS compliant eGaN FETs to be introduced and it is our plan to have all eGaN FETs available lead-free and RoHS-compliant within the next 4 months.” said Alex Lidow, co-founder and CEO.

An application note detailing the performance improvements of these next generation devices can be found at: http://epc-co.com/epc/documents/product-training/Characteristics_of_Second_Generation_eGaN_FETs.pdf

In 1k piece quantities, the EPC2001 is priced at $2.80 and the EPC2015 is priced at $2.48. Both products are immediately available through Digi-Key Corporation at http://digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en

Table 1 – Summary of Specification Ratings

EPC2001 - EPC2015 Summary of Specification Ratings

About EPC

EPC is the leader in enhancement mode Gallium Nitride based power management devices. EPC is the first to introduce enhancement-mode Gallium-Nitride-on-Silicon (eGaN™) FETs as power MOSFET replacements in applications such as servers, netbooks, notebooks, LED lighting, cell phones, base stations, micro-inverters, and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

Press contact: Joe Engle tel: 310.986.0350 email: [email protected]


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Efficient Power Conversion Corporation (EPC) Market Leading eGaN™ FET Named Finalist in Prestigious 2010 EDN Innovation Awards Competition

Efficient Power Conversion Corporation (EPC) Market Leading eGaN™ FET Named Finalist in Prestigious 2010 EDN Innovation Awards Competition

EL SEGUNDO, Calif-February 23, 2011 - Efficient Power Conversion Corporation’s EPC1010 enhancement-mode gallium nitride on silicon (eGaN™) power FET has been named a finalist in EDN’s 21st annual Innovation Awards http://innovation.edn.com/) within the Power IC’s category.

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Efficient Power Conversion Corporation (EPC) Market Leading eGaN™ Products Named Product of the Year by Electronic Products Magazine

EL SEGUNDO, Calif-January 6, 2011 — Efficient Power Conversion Corporation’s (EPC) family of enhancement-mode gallium nitride on silicon (eGaN™) power FETs have been honored with an Electronic Products’ Product of the Year award.

The editors of Electronic Products — a leading trade publication for electronic design engineers — evaluated thousands of products launched in 2010. The winning products were selected on the basis of innovative design, significant advancement in technology or application and substantial achievement in price and performance. The eGaN FETs demonstrated success in the category of discrete semiconductors.

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Efficient Power Conversion Corporation (EPC) Market Leading eGaN™ Products Win Electronic Design News (EDN) China Innovation Award

EL SEGUNDO, Calif-November 18, 2010 -Efficient Power Conversion Corporation’s (EPC) family of enhancement-mode gallium nitride on silicon (eGaN™) power FETs have been awarded the “Editor’s Choice Award” in the power device and module segment of the 2010 EDN China Innovation Awards.

"Enhancement-mode eGaN by Efficient Power Conversion Corporation was honored with Editor's Choice Award by EDN China Innovation Award's panel of judges based on the online voting by the Chinese design engineers. It is the best-recognized product yet to be fully adopted in target markets. We also recognize EPC's potential significant contribution to the Chinese engineering communities with its innovations to set a new course in the power technology roadmap", said William Zhang, Publisher of EDN China.

“We are proud that the panel of judges and readers of EDN China have selected eGaN FET products from the more than 150 entrants. This award substantiates that EPC’s enhancement-mode GaN power transistors represent a major breakthrough in power conversion technology. The award supports our belief that performance from silicon-based MOSFETs has reached the end of the road and that eGaN technology will lead the way for continued increases in performance in power transistors.” said Alex Lidow, EPC’s co-founder and Chief Executive Officer.

Spanning a range of 40 Volts to 200 Volts, and 4 milliohms to 100 milliohms, eGaN FETs demonstrate significant performance advantages over state-of-the-art silicon-based power MOSFETs. EPC’s technology produces devices that are smaller than similar resistance silicon devices and have many times superior switching performance.

Applications that benefit from this eGaN performance are DC-DC power supplies, point-of-load converters, class D audio amplifiers, notebook and netbook computers, solar microinverters, Power over Ethernet (PoE), LED drive circuits, telecom base stations, and cell phones, to name just a few.

Products based on eGaN technology are available today and are priced between $1.12 and $5.00 in 1k quantities. They are immediately available through Digi-Key Corporation.

About EPC

EPC is the leader in enhancement mode Gallium Nitride based power management devices. EPC is the first to introduce enhancement-mode Gallium-Nitride-on-Silicon (eGaN™) FETs as power MOSFET replacements in applications such as servers, netbooks, notebooks, LED lighting, cell phones, base stations, Microinverters, and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

Press contact: Joe Engle tel: 310.986.0350 email: [email protected]

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Tags: Awards

Device Models for Enhancement Mode GaN Transistors from Efficient Power Conversion Corporation

EL SEGUNDO, Calif.--(BUSINESS WIRE)—Efficient Power Conversion Corporation (EPC) today announced that the company has made available updated device models for all of its enhancement mode gallium nitride (eGaN™) transistors on its web site.

These updates improve the robustness of the models without changing the core equations. Performance predictions with the new models will be consistent with previous versions of EPC SPICE models.

TSPICE, PSPICE, LTSPICE, and Spectre device models are provided to help designers of advanced eGaN-based power conversion circuits and systems understand the value of the EPC eGaN power transistor family and reduce their time-to-market with benchmark products.

These free downloads are available at:

http://epc-co.com/epc/ToolsandDesignSupport/DeviceModels.aspx

EPC has also written an application note to help users understand eGaN™ transistor capabilities and the applicability of the SPICE models. This application note is available at:

http://epc-co.com/epc/documents/product-training/Circuit_Simulations_Using_SPICE.pdf

About EPC

EPC is the leader in enhancement mode Gallium Nitride based power management devices. EPC is the first to introduce enhancement-mode Gallium-Nitride-on-Silicon (eGaN™) FETs as power MOSFET replacements in applications such as servers, netbooks, notebooks, LED lighting, cell phones, base stations, Microinverters, and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. Visit our web site:

Press contact: Joe Engle tel: 310.986.0350 email: [email protected]

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Categories: Press Releases

Efficient Power Conversion Corporation (EPC) today announced the introduction of the EPC9002 development board

EL SEGUNDO, Calif.--(BUSINESS WIRE)—Efficient Power Conversion Corporation (EPC) today announced the introduction of the EPC9002 development board to make it easier for users to get started designing with EPC’s 100V enhancement-mode GaN transistor products.

The EPC9002 development board is a 50 V maximum input voltage, 7 A maximum output current, half bridge with onboard gate drives, featuring the EPC1001 100V GaN Power Transistor. The purpose of this development board is to simplify the evaluation process of the EPC1001 GaN power transistor by including all the critical components on a single board that can be easily connected into any existing converter. The EPC9002 development board is 2” x 1.5” and contains not only two EPC1001 GaN transistors in a half bridge configuration with gate drivers, but also an on board gate drive supply and all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation.

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Efficient Power Conversion Corporation (EPC) today announced that the company has made available on its web site SPICE models for all of its enhancement mode GaN transistors.

EL SEGUNDO, Calif.--(BUSINESS WIRE)—Efficient Power Conversion Corporation (EPC) today announced that the company has made available on its web site SPICE models for all of its enhancement mode GaN transistors.

TSPICE, PSPICE, and LTSPICE device models have been developed to help the designer of advanced GaN-based power conversion circuits and systems understand the value of this new power transistor family and reduce their time-to-market with benchmark products. These free downloads are available at:

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Efficient Power Conversion Corporation Announces 40 V to 200V Enhancement Mode GaN Power Transistors

EL SEGUNDO, Calif-March 8, 2010 -Efficient Power Conversion Corporation (EPC) today introduced a family of enhancement mode power transistors based on its proprietary Gallium Nitride on Silicon technology.

Spanning a range of 40 Volts to 200 Volts, and 4 milliohms to 100 milliohms, these power transistors demonstrate significant performance advantages over state-of-the-art silicon-based power MOSFETs. EPC’s technology produces devices that are smaller than similar resistance silicon devices and have many times superior switching performance. Applications that benefit from this newly available performance are DC-DC power supplies, point-of-load converters, class D audio amplifiers, notebook and netbook computers, LED drive circuits, telecom base stations, and cell phones, to name just a few.

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Efficient Power Conversion Corporation Announces Exclusive Global Distribution Deal with Digi-Key Corporation

EL SEGUNDO, Calif. - March 8, 2010 -Efficient Power Conversion Corporation (EPC) today announced that Digi Key Corporation will be the exclusive global distributor for EPC’s line of enhancement-mode Gallium Nitride power transistors.

Spanning a range of 40 Volts to 200 Volts, and 4 milliohms to 100 milliohms, these power transistors demonstrate significant performance advantages over state-of-the-art silicon-based power MOSFETs. EPC’s technology produces devices that are smaller than similar resistance silicon devices and have many times superior switching performance. Applications that benefit from this newly available performance are DC-DC power supplies, point-of-load converters, class D audio amplifiers, notebook and netbook computers, LED drive circuits, telecom base stations, and cell phones, to name just a few.

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