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Efficient Power Conversion (EPC) to Display GaN-Enabled Consumer Applications Including Autonomous Cars, Wireless Power, Drones, Robotics, and High-End Audio Systems at 2020 CES

Efficient Power Conversion (EPC) to Display GaN-Enabled Consumer Applications Including Autonomous Cars, Wireless Power, Drones, Robotics, and High-End Audio Systems at 2020 CES

Within the EPC hospitality suite at the Venetian hotel, world-changing innovations and gallium nitride (GaN) will go hand in hand. A variety of demonstrations will showcase GaN’s higher efficiency, smaller size, and lower cost solutions.

EL SEGUNDO, Calif. — December 2019 — Efficient Power Conversion (EPC) announced that it will be demonstrating the power of eGaN® technology to enhance game-changing consumer applications including self-driving cars, robots, drones, wireless power, world-class audio and cutting-edge automotive solutions – at the 2020 Consumer Electronics Show (CES) in Las Vegas, January 7th through the 10th.

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Categories: Press Releases

Wireless Power Webinar: Why GaN Improves Efficiency, Reduces Size, and Lowers Cost in AirFuel Resonant Wireless Power

Wireless Power Webinar: Why GaN Improves Efficiency, Reduces Size, and Lowers Cost in AirFuel Resonant Wireless Power

In this webinar, Alex Lidow, CEO of Efficient Power Conversion Corporation, discussed how GaN technology significantly improves system efficiency, size, and cost, thus accelerating the adoption of magnetic resonance and AirFuel Resonant technology.

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Categories: Articles

Matching Driver IC And FETs Bring GaN Benefits To Low-Voltage POL Converters

Matching Driver IC And FETs Bring GaN Benefits To Low-Voltage POL Converters

This article demonstrates the performance improvements that can be obtained when using GaN FETs in combination with suitable GaN FET drivers in 12-V input to 1-V output point-of-load converters. The example design described here uses the uP1966D, a dual-channel, synchronous driver IC from uPI Semiconductor in combination with an EPC2100 GaN asymmetrical half-bridge FET from Efficient Power Conversion.

How2Power Today
December, 2019
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Categories: Articles

Go-ahead for GaN

Go-ahead for GaN

It’s getting harder to avoid using GaN power transistors and ICs, says Alex Lidow. There are many reasons to use GaN-on-Si power transistors such as eGaN FETs, in telecoms, vehicles, healthcare and computing. Smaller, faster, lower cost, and more integrated, GaN-on-Si devices have spent a decade gaining the confidence and trust of designers across the spectrum of power conversion applications.

Electronic Specifier
November 20, 2019
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Categories: Articles

Qualifying and Quantifying GaN Devices for Power Applications

Qualifying and Quantifying GaN Devices for Power Applications

It’s okay to start using gallium-nitride (GaN) devices in your new designs. GaN transistors have become extremely popular in recent years. These wide-bandgap devices have been replacing LDMOS transistors in many power applications. For example, GaN devices are broadly being adopted for new RF power amplifiers used in cellular base stations, radar, satellites, and other high-frequency applications. In general, their ability to endure higher voltages and operate at frequencies well into the millimeter-wave (mmWave) range have them replacing traditional RF power transistors in most amplifier configurations.

Electronic Design
November, 2019
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Categories: Articles

GaN in Space

GaN in Space

This article discussed an oft forgotten or little-noticed part of the spacecraft enabling travel into outer space---power management in the space vehicle. Wide bandgap semiconductors like gallium nitride (GaN), silicon carbide (SiC), as well as diamond, are looking to be the most promising materials for future electronic components since the discovery of silicon. These technologies, depending upon their design, offer huge advantages in terms of power capability (DC and microwave), radiation insensitivity, high temperature and high frequency operation, optical properties and even low noise capability. Therefore, wide bandgap components are strategically important for the development of next generation space-borne systems. eGaN devices are quickly gaining momentum in the space industry and we will see many more applications for them by NASA and commercial contractors in future programs like Artemis and other programs in countries around the globe pursuing efforts into Space.

Power Systems Design
November, 2019
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Categories: Articles

Executive Interview with Alex Lidow on Winning GaN Applications

Executive Interview with Alex Lidow on Winning GaN Applications

Ahead of December’s Power Conference in Munich, Bodo Arlt took the opportunity to get an insight into Alex Lidow’s thoughts on where the GaN market is now and where he sees the potential applications for the future. Dr. Lidow is the CEO and Co-founder of Efficient Power Conversion (EPC).

Bodo’s Power Systems
November, 2019
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Categories: ArticlesInterviews

Marco Palma Joins Efficient Power Conversion (EPC) as Senior FAE Manager for Europe

Marco Palma Joins Efficient Power Conversion (EPC) as Senior FAE Manager for Europe

In support of a widening customer base in Europe, Efficient Power Conversion Corporation has expanded its technical leadership team to assist customers in the adoption of eGaN® FETs and Integrated circuits for applications including DC-DC, Lidar, motor control, and beyond.

EL SEGUNDO, Calif. — October, 2019 — To support its accelerating design activity, and to provide local technical support to EPC’s customers in Europe, Efficient Power Conversion Corporation (EPC) is proud to announce that Marco Palma, a seasoned expert, has joined the EPC technical leadership team as Senior FAE Manager for Europe. 

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Categories: Press Releases

Power Semi Wars Begin

Power Semi Wars Begin

GaN and SiC are becoming much more attractive as prices drop. Several vendors are rolling out the next wave of power semiconductors based on gallium nitride (GaN) and silicon carbide (SiC), setting the stage for a showdown against traditional silicon-based devices in the market.

Semiconductor Engineering
October, 2019
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Categories: Articles

Automotive Qualified eGaN FET, 15 V EPC2216 Helps Time-of-Flight Lidar Systems ‘See’ Better

Automotive Qualified eGaN FET, 15 V EPC2216 Helps Time-of-Flight Lidar Systems ‘See’ Better

Efficient Power Conversion (EPC) expands AEC Q101 product family with the addition of the EPC2216, 15 V gallium nitride transistor optimized for affordable, high performance lidar systems.

EL SEGUNDO, Calif.— October 2019 — EPC announces successful AEC Q101 qualification of the 15 V EPC2216 designed for lidar applications where increased accuracy is vital such as in self-driving cars and other time-of-flight (TOF) applications including facial recognition, warehouse automation, drones and mapping.

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Categories: Press Releases

EPC Launches 3rd Edition of Gallium Nitride (GaN) Textbook with Power Conversion Applications Focus

EPC Launches 3rd Edition of Gallium Nitride (GaN) Textbook with Power Conversion Applications Focus

GaN theory and applications, such as lidar, DC-DC conversion, and wireless power using gallium nitride FETs and ICs, form the focus of this third edition of “GaN Transistors for Efficient Power Conversion”

EL SEGUNDO, CA – October 2019 – Efficient Power Conversion Corporation (EPC) announce the publication of the third edition of “GaN Transistors for Efficient Power Conversion,” a textbook written by power conversion industry experts and published by John Wiley and Sons. 

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Categories: Press Releases

EPC Partners with Solace Power to Incorporate Highly Efficient, Low Cost eGaN FETs for Its Upcoming 250-Watt Wireless Power Platforms

EPC Partners with Solace Power to Incorporate Highly Efficient, Low Cost eGaN FETs for Its Upcoming 250-Watt Wireless Power Platforms

Efficient Power Conversion (EPC) provides gallium nitride-based power devices for Solace Power’s 250 W wireless power platforms to enable higher power solutions and faster design cycle times.

EL SEGUNDO, Calif.— September 2019 — EPC announces collaboration with Solace Power, a leading wireless power, sense and data company, to enable 250-watt wireless power solutions designed for 5G, aerospace, automotive, medical, and industrial applications. Solace Power’s intelligent wireless platform use EPC’s 200 V enhancement-mode gallium nitride (eGaN®) power transistors. This modular platform shares the same Equus™ architecture and enables up to 250 Watts of transmitted power with superior six degrees of spatial freedom.

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Categories: Press Releases

Podcast: Moore's Law and GaN

Podcast: Moore's Law and GaN

Alex Lidow has deep roots in the electronics industry. His father and grandfather founded International Rectifier in 1947. Alex eventually ran the company himself for 12 years. He is currently the CEO of EPC, a company that manufactures gallium nitride-based power transistors and integrated circuits. These products are now found in lidar systems for autonomous vehicles, in 4G/LTE base stations, in DC-DC converters for servers and satellites, and in a wide variety of medical products.

EE Times on Air
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Categories: Interviews

DC-DC Conversion for 48 V – 12 V Automotive Applications

DC-DC Conversion for 48 V – 12 V Automotive Applications

GaN transistors, with favorable figures of merit (FOM) for 48 V applications, can provide a reduction in size, weight, and bill of material costs. This article presents a five-phase, fully regulated, bidirectional 48 V to 12 V DC-DC converter. An advancedthermalmanagement solution suitable for use with eGaN FETs results in a system that can provide 3kW of power at an efficiency exceeding 97.5% into a 14.5 V battery.

Power Systems Design
July, 2019
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Categories: Articles

GaN Powers Small Satellites

GaN Powers Small Satellites

Small satellites bring a more cost-effective approach to low-Earth-orbit (LEO) missions, helping to deliver low-cost internet access across the globe. For this application, GaN FETs partnered with a radiation tolerant pulse width modulation controller and GaN fet driver allow more efficient switching, higher frequency operation, reduced gate drive voltage and smaller solution sizes compared to the traditional silicon counterparts.

Electronics Weekly
July, 2019
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Categories: Articles

Data center power in 2019

Data center power in 2019

It is expected that there will be more than 175 zettabytes of data by 2025. Data center construction and deployment, as well as upgrading efforts in existing older ones, is booming with the advent of 5G, starting in earnest at the 2020 Olympics in Japan (6G is already being discussed for future development) and the growth of artificial intelligence (AI) and machine learning (ML).

It makes so much sense to me that GaN should be the power transistor of choice in Data Center power architectures where size, efficiency and speed are critical. In all the topologies with 48 VIN, the highest efficiency was achieved with GaN devices.

EDN
June 2019
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Categories: Articles

EPC and Spirit Electronics to Provide Data Packs for eGaN Power Devices

EPC and Spirit Electronics to Provide Data Packs for eGaN Power Devices

Efficient Power Conversion (EPC,) in partnership with Spirit Electronics, will provide manufacturing lot-specific data services for their industry-leading gallium nitride-based power devices.

EL SEGUNDO, Calif.— June 2019 — EPC announces a partnership with Spirit Electronics to provide an expanded range of manufacturing lot-specific data services for their industry-leading enhancement-mode gallium nitride (GaN) devices

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Categories: Press Releases

GaN Makes a Frontal Attack on Silicon Power MOSFETS

GaN Makes a Frontal Attack on Silicon Power MOSFETS

Today’s GaN FETs are improving rapidly in size and performance. The benchmark devices are still 300 times away from their theoretical performance limits. The early GaN adopters needed the speed. Big examples were lidar systems for autonomous cars, drones, and robots, and 4G/LTE base stations. The volume has grown, and now GaN power devices are at a point where the prices are equivalent to the slower, bigger and aging power MOSFET. Thus, it is time for GaN’s frontal assault!

Bodo’s Power Systems
June 2019
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