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Accelerated development of eGaN FETs as silicon MOSFET come to the end of the road

With eGaN® FETs' high-performance capabilities, we have seen rapid adoption in applications for efficient DC/DC conversion, POL converters, Class D audio amplifier and high frequency circuits. Texas Instruments’ introduction of the industry's first 100V, half-bridge GaN FET driver (LM5113), optimized for use with enhancement-mode GaN (eGaN) field-effect transistors (FETs),has further propelled such an accelerated adoption pace in applications like high-performance telecom power supplies, networking and datacom centers.

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EDN China April 2012 Print Issue

EDN China April 2012

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Categories: GaN Market News

GaN power market to rise to $10 million in 2012, says Yole

Written by Peter Clarke - 3/7/2012 2:20 PM EST

LONDON - The market for power devices implemented in gallium nitride was less than $2.5 million in 2011, according to market research firm Yole Developpement (Lyon, France). However, there is a great deal of R&D activity and Yole sees the power GaN market growing to nearly $0 million in 2012 and $500 million in 2016.

International Rectifier Corp. (El Segundo, Calif.) and Efficient Power Conversion Corp. (El Segundo, Calif.) are likely to remain the two main vendors of GaN power devices in early 2012 and the annual market is likely to say below $10 million, Yole said.

The year of 2013 should see a transition from product qualification to production for a number of GaN power chip companies as the annual market climbs to $50 million. The availability in 2015 power devices built using processes with +600-V breakdown specifications should open the market to off-mains applications by which time 12 to 15 companies should be sharing consumption of more than 100,000 6-inch equivalent wafers.

Beyond 2015 the qualification of GaN for the electric vehicle sector would allow the GaN device business to approach $1 billion in annual value, according to Philippe Roussel, power electronics business unit manager at Yole. Nonetheless that will depend on how and when automobile makers choose between silicon, silicon-carbide, and GaN technology.

A number of alternative substrates are being pursued including GaN-on-Sapphire, GaN-on-SiC, GaN-on-GaN, GaN-on-AlN and GaN-on-silicon. Yole takes the position that GaN-on-silicon is likely to dominate production as 6-inch wafers topped with 7-micron thick GaN epi are already available. Similar wafers of 200-mm diameter are under qualification and their availability will likely make this technology the economic choice, Yole said.

Some LED players, who already use GaN, are looking at GaN power as a means of diversification for their manufacturing capacity, Yole said.

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Categories: GaN Market News

Market Adoption of Enhancement Mode Gallium Nitride Transistors (eGaN® FETs) - Interview at IIC 2012

Alex Lidow, the co-inventor of the HEXFET power MOSFET and CEO of Efficient Power Conversion (EPC), discusses the market adoption of Enhancement Mode Gallium Nitride Transistors (eGAN FETs) due to their tremendous size and performance advantages over silicon power MOSFETs, eGaN's “disruptive” technological impact on power semiconductor markets and potential applications, and EPC’s upcoming introduction of eGaN power devices for high voltage AC/DC converters and high power motor control applications.

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Categories: Interviews

Gallium nitride based devices set to bring substantial boost to power efficiency

Gallium nitride has long been known to have useful properties when it comes to electronic components. Even so, its application has largely been confined to more exotic areas of the industry, particularly rf transistors.

But GaN is beginning to find application in what could be considered the mainstream, with some of its proponents suggesting its arrival could mark the beginning of the end for the traditional power mosfet.

By: Graham Pitcher
New Electronics
December 13, 2011
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Categories: GaN Market News

Alex Lidow, CEO, interviewed in ECN's Tinker’s Toolbox

Alex Lidow is interviewed by ECN's Editorial Director, Alix Paultre, on the Tinker's Toolbox, ECN's audio interview website.  The interview explores the attributes of GaN technology, applications opened as a result of GaN's superior performance to MOSFETs and reasons for the take-up of eGaN FET products over the past year.

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Categories: Interviews

Alex Lidow, CEO, presents at Innovation Technology Conference

 View video of EPC's CEO, Alex Lidow as he presents "eGaN - Starting from the GaN"  at the Innovation Technology Conference in China.