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Are GaN Transistors Ready for Prime Time?

Gallium Nitride transistors have been available since Eudyna and Nitronex first introduced depletion-mode RF transistors in about 2005. Since then many new companies have entered the field with both RF transistors (e.g. RFMD, Triquint, Cree, Freescale, Integra, HRL, M/A-COM, and others), and transistors designed to replace power MOSFETs in power conversion applications (e.g. Transphorm, International Rectifier, GaN Systems, microGaN, and Efficient Power Conversion). This article discusses if this ground swell of activity mean that GaN transistors are ready to replace power MOSFETs, and, if ... Read more
Categories: Articles

eGaN® FET-Silicon Power Shoot-Out Part 9: Wireless Power

Wireless power applications are gaining popularity in many commodity products such as mobile phones chargers. Enhancement mode gallium nitride transistors offer an alternative to MOSFET technology as they can switch fast enough to be ideal for wireless power applications. This article focuses on experimental evaluation of an induction coil wireless energy system using eGaN FETs operating at 6.78 MHz designed to be suitable for multiple 5 W USB based charging loads. By Johan Strydom, Ph.D., Vice President of Applications, EPC and Johan Strydom, Ph.D., Vice President of Applications, ... Read more
Categories: Articles

Eighth Brick DC-DC Converter Using Efficient GaN Transistor

In this article, we show that using GaN Transistors such as Efficient Power Conversion’s eGaN® FETs can improve the efficiency of isolated eighth brick DC-DC converters. This type of power converters is used extensively in mainframes, servers and telecommunication systems, and is available in a variety of sizes, output power capability, and input and output voltage ranges. Its modularity, power density, reliability and versatility have simplified the isolated power supply market. By Johan Strydom, Ph.D., Vice President of Applications, EPC Bodo’s Power Systems Read ... Read more
Categories: Articles

eGaN® FET- Silicon Power Shoot-Out Volume 8: Envelope Tracking

Envelope tracking (ET) for radio frequency (RF) amplifiers is not new. But with the ever increasing need for improved cell phone battery life, better base station energy efficiency, and more output power from very costly RF transmitters, the need for improving the RF Power Amplifier (PA) system efficiency through ET has become an intense topic of research and development. We demonstrate what power and efficiency levels are readily realizable using eGaN FETs in a buck converter for high power envelope tracking applications. By Johan Strydom, Ph.D., Vice President of Applications, EPC ... Read more
Categories: Articles

Efficient Power Conversion Corporation (EPC) Publishes Industry’s First Application-focused Gallium Nitride (GaN) Transistors Textbook

Written by industry experts, "GaN Transistors for Efficient Power Conversion" provides both theory and applications for gallium nitride transistors EL SEGUNDO, Calif. - January 2012 - Efficient Power Conversion Corporation (www.epc-co.com) announces the publication of a textbook designed to provide power system design engineers basic technical and application-focused information on how to design more efficient power conversion systems using gallium nitride-based transistors. "This book will help designers to understand the exceptional benefits of GaN technology and the ... Read more
Categories: Press Releases

eGaN® FET-Silicon Power Shoot-Out Part 3: Power over Ethernet

The eGaN FET is a viable and efficient alternative to standard MOSFET solutions in Power over Ethernet (PoE) applications. These FETs enable higher operating frequencies that can be leveraged into reduced converter size and cost. Both 13W and 26W PoE eGaN FET converters were built and evaluated side by side with standard MOSFET designs. In every instance, eGaN FET converters exhibited higher efficiencies with the potential of reducing system cost over their MOSFET counterparts. By Johan Strydom, Ph.D., Vice President of Applications, EPC Michael de Rooij, Ph.D., Director of ... Read more
Categories: Articles

The eGaN FET-Silicon Power Shoot-Out: Part 2 – Drivers, Layout

eGaN FETs differ from silicon MOSFETs in part because of their significantly faster switching speeds. In the second article of this series, we explore the different requirements for gate drive, layout, and thermal management.

By Johan Strydom PHD, Director of Application Engineering, EPC
Power Electronics Technology
January 1, 2011

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Categories: Articles

Driving eGaN™ FETs Both gate and Miller capacitances are significantly lower

As enhancement mode gallium-nitride-on-silicon transistors (eGaN™) gain wider acceptance as the successor to the venerable - but aged - power MOSFET, designers have been able to improve power conversion efficiency, size, and cost. eGaN FETs, however, are based on a relatively new and immature technology with limited design infrastructure to quickly design and implement products. By Johan Strydom PhD, Director of Application Engineering EPC Bodo’s Power Systems November, 2010 Read the article Read more
Categories: Articles

Driving eGaN™ Transistors for Maximum Performance

The recent introduction of enhancement mode GaN transistors (eGaN™) as power MOSFET/ IGBT replacements in power management applications enables many new products that promise to add great system value. In general, an eGaN transistor behaves much like a power MOSFET with a quantum leap in performance, but to extract all of the newly-available eGaN transistor performance requires designers to understand the differences in drive requirements. By Johan Strydom and Alex Lidow September, 2010 Read the article Read more
Categories: Articles

eGaN™-Silicon Power Shoot-Out: Part 1 Comparing Figure of Merit (FOM)

One yardstick to compare enhancement mode GaN (eGaN) power devices with state-of-the-art silicon MOSFETs is FOM. However, beyond these pure mathematical numbers, there are other device and package related parameters that significantly influence in-circuit performance.

By Johan Strydom PHD, Director of Application Engineering, EPC
Power Electronics Technology
September 1, 2010

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Categories: Articles

How2 Get the Most Out of GaN Power Transistors

Thirty years of silicon power-MOSFET development has taught us that one of the key variables controlling the adoption rate of a disruptive technology is how easy the new technology is to use. This principle has guided the design of EPC’s enhancement-mode GaN (eGaN) transistors. This article explains why eGaN devices are easy to use, describing how they operate and their similarities and differences versus power MOSFETs. By Johan Strydom How2Power June, 2010 Read the article Read more
Categories: Articles

GaN – the New Frontier for Power Conversion

Due to its advantages GaN will probably become the dominant technology. GaN has a much higher critical electric field than silicon which enables this new class of devices to withstand much greater voltage from drain to source with much less penalty in on-resistance.

By Alex Lidow, PhD
Bodo’s Power Systems
June, 2010

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