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Efficient Power Conversion (EPC) Experts Joining Engineers in China to Innovate New Designs by Maximizing GaN FET and IC Performance, More Than Just Replacing MOSFETs

Efficient Power Conversion (EPC) Experts Joining Engineers in China to Innovate New Designs by Maximizing GaN FET and IC Performance, More Than Just Replacing MOSFETs

EPC will exhibit live demonstrations showing how GaN technology’s superior performance is transforming power delivery for entire industries including wireless charging, DC/DC, LiDAR and automotive.

EL SEGUNDO, Calif. — March 8, 2018 — The EPC executive and technical team will be engaged in three industry events in Shenzhen and Shanghai, China on March 14 – 16 in demonstrating and sharing with engineers on how to maximize GaN FET and IC performance in their innovative designs, to win their customers.

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EPC Introduces Two eGaN ICs Combining Gate Drivers with High Frequency GaN FETs for Improved Efficiency, Reduced Size and Lower Cost

EPC Introduces Two eGaN ICs Combining Gate Drivers with High Frequency GaN FETs for Improved Efficiency, Reduced Size and Lower Cost

EPC2112 and EPC2115 GaN-based monolithic integrated solutions offer power systems designers the ability to increase efficiency in an extremely small size.

EL SEGUNDO, Calif. — March 2018 — Efficient Power Conversion Corporation (EPC) announces the EPC2112 and EPC2115 enhancement-mode monolithic GaN power transistor with integrated driver products. The EPC2112 is a 200 V, 40-mΩ eGaN® FET plus integrated gate driver. In comparison, the EPC2115 is an integrated circuit with dual 150 V, 70-mΩ eGaN FETs plus gate drivers. Both products are capable of operating up to 7 MHz and are available in low inductance, extremely small, 2.9 mm x 1.1 mm BGA surface-mount passivated die.

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APEC2018: EPC Professional Education GaN Seminar

APEC2018: EPC Professional Education GaN Seminar

Alex Lidow and his team of Michael de Rooij, David Reusch, and John Glaser gave an excellent technical tutorial this morning to a packed audience of Professional Engineers (PEs). The topic was a very timely ‘Maximizing GaN FET and IC performance: Not just a drop-in replacement of MOSFETs’.

Planet Analog
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GaN Power Modules Deliver Over 1400 W/in3 for 48 V – 12 V DC-DC and Up to 10 MHz for Point-of-Load Power Conversion

GaN Power Modules Deliver Over 1400 W/in3 for 48 V – 12 V DC-DC and Up to 10 MHz for Point-of-Load Power Conversion

Efficient Power Conversion’s EPC9204 and EPC9205 power modules demonstrate the efficiency enhancements and significant size reduction achieved in DC-DC power conversion using high frequency switching eGaN® power transistors and integrated circuits.

EL SEGUNDO, Calif.— March 2018 — Efficient Power Conversion Corporation (EPC) introduces two new GaN power modules for DC-DC conversion, increasing efficiency across the 48 V to point-of-load power architecture. The EPC9205 is a high-power density PCB-based power module for 48 V – 12 V conversions while the EPC9204 address the 20 V – point-of-load conversion with an ultra-thin profile PCB-based power module.

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GaN-Based 48 V to 12 V Regulated Power Supply Development Board Delivers over 1250 W per Cubic Inch and Over 96% Efficiency

GaN-Based 48 V to 12 V Regulated Power Supply Development Board Delivers over 1250 W per Cubic Inch and Over 96% Efficiency

Efficient Power Conversion’s EPC9130 five-phase development board demonstrates the extreme size reduction and efficiency enhancement for power conversion achieved using high frequency switching eGaN® power transistors.

EL SEGUNDO, Calif.— March 2018 —Efficient Power Conversion Corporation (EPC) introduces EPC9130 48 V − 12 V non-isolated, fully regulated development board.  This five-phase board with 12 A per phase has a maximum output current of 60 amps, making the board capable of over 700 W. The EPC9130 provides extremely high-power density exceeding 1250 W per cubic inch, and over 96% efficiency.

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Gaming laptops will have smaller power supplies with EPC’s gallium nitride chips

Gaming laptops will have smaller power supplies with EPC’s gallium nitride chips

Gamers may not care about the finer points of gallium nitride (eGaN) chips as evangelized by power pioneer Alex Lidow, CEO of Efficient Power Conversion (EPC). But they will care that those chips will enable a new generation of gaming laptops with much smaller power supplies than in the past.

Venture Beat
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EPC to Showcase Industry-Leading Performance in High Power Density DC-DC Conversion and Multiple High Frequency Applications Using eGaN Technology at APEC 2018

EPC to Showcase Industry-Leading Performance in High Power Density DC-DC Conversion and Multiple High Frequency Applications Using eGaN Technology at APEC 2018

EPC will exhibit live demonstrations showing how GaN technology’s superior performance is transforming power delivery for entire industries including computing, communications, and automotive.

EL SEGUNDO, Calif. — February 2018 — The EPC team will be delivering seven technical presentations on gallium nitride (GaN) technology and applications at APEC 2018 in San Antonio, Texas from March 4th through the 8th. In addition, the company will demonstrate its latest eGaN FETs and ICs in customers’ end products that are enabled by eGaN technology.

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Will GaN and the Tesla SpaceX car survive space radiation? Yes and no.

Will GaN and the Tesla SpaceX car survive space radiation? Yes and no.

Two space travel related stories hit my desktop this week; one that rapidly generated major international headlines and one that slid very quietly onto my email screen.

The headline-hitter was the successful launch of Elon Musk’s SpaceX rocket with its payload of a Tesla sports car, complete with a dummy driver at the wheel. The second was about Gallium Nitride technology that would be suitable for space applications.

Electro Pages
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Renesas Electronics Ships Space Industry’s First Radiation-Hardened 100V and 200V GaN FET Power Supply Solutions

Renesas Electronics Ships Space Industry’s First Radiation-Hardened 100V and 200V GaN FET Power Supply Solutions

SL70040SEH Low Side GaN FET Driver Powers ISL7002xSEH GaN FETs in Launch Vehicle and Satellite Power Supplies

TOKYO--(BUSINESS WIRE)--Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today announced the space industry’s first radiation-hardened, low side Gallium Nitride (GaN) field effect transistor (FET) driver and GaN FETs that enable primary and secondary DC/DC converter power supplies in launch vehicles and satellites, as well as downhole drilling and high reliability industrial applications. These devices power ferrite switch drivers, motor control driver circuits, heater control modules, embedded command modules, 100V and 28V power conditioning, and redundancy switching systems.

Business Wire
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Best Practices for Integrating eGaN FETs

Best Practices for Integrating eGaN FETs

Best design practices utilize the advantages offered by eGaN FETs, including printed circuit board (PCB) layout and thermal management. As GaN transistor switching charges continue to decrease, system parasitics must also be reduced to achieve maximum switching speeds and minimize parasitic ringing typical of power converters.

Power Electronics
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Lidar: A Gold Rush Is On to Help Your Car See Better

Lidar: A Gold Rush Is On to Help Your Car See Better

Developers are hard at work on the machine learning necessary for safer and more-autonomous vehicles. But all the AI in the world won’t be enough if the car relies on inadequate sensors. That was clearly demonstrated in one fatal Tesla crash that occurred in part because the car’s camera didn’t correctly identify an oncoming truck. To ensure smart vehicles have a reliable model of surrounding objects — particularly the ones the cars identify as “threats” — most rely on one or more lidars, or laser-based remote sensors.

Extreme Tech
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CES 2018 in Photos: What We Remember Most

CES 2018 in Photos: What We Remember Most

LAS VEGAS — Once again the marathon that is CES is drawing to a close. Four days of trade show plus two days of media events. All sprawled across five miles of Las Vegas in some insane number of hotels and conference venues. As usual, I stuck it out so you don’t have to. Here are some of the images that struck me as interesting, weird, or just plain worth remembering:

Extreme Tech
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EPC’s Wireless Power Fix: Get a Load of This Antenna

EPC’s Wireless Power Fix: Get a Load of This Antenna

Wireless power, the ability to deliver electricity to gadgets without plugging those gadgets into a cable, is a hotbed of innovation at the moment. The dominant standard, called “Qi,” is ever under attack from other efforts.

This week saw interesting developments from Energous (WATT), which aims to transfer power via radio frequency transceivers, with limited results so far, and some controversy about its business.

There are other contenders. On Wednesday in Las Vegas, during the Consumer Electronics Show, I met with Alex Lidow, who is founder of a privately held chip company EPC of El Segundo, California.

Barron's
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Why experts believe cheaper, better lidar is right around the corner

Why experts believe cheaper, better lidar is right around the corner

This article takes a deep dive into lidar technology. It explains how the technology works and the challenges technologists face as they try to build lidar sensors that meet the demanding requirements for commercial self-driving cars.

The bottom line is that while bringing lidar costs down will take a significant amount of difficult engineering work, there don't seem to be any fundamental barriers to bringing the cost of high-quality lidar down below $1,000—and eventually below $100. That means the technology—and ultimately, self-driving vehicles that depend on lidar—should be well within reach for ordinary consumers.

Ars Techinca
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EPC Introduces 40 V Gallium Nitride Power Transistor 8 Times Smaller Than Equivalently Rated MOSFETS

EPC Introduces 40 V Gallium Nitride Power Transistor 8 Times Smaller Than Equivalently Rated MOSFETS

EPC2049 GaN power transistor offers power systems designers a 40 V, 5 mΩ power transistor about 8 times smaller than equivalently rated silicon MOSFETs for point of load converters, LiDAR, and low inductance motor drive.

EL SEGUNDO, Calif. — December 2017 — EPC announces the EPC2049 power transistor for use in applications including point of load converters, LiDAR, envelope tracking power supplies, class-D audio, and low inductance motor drives. The EPC2049 has a voltage rating of 40 V and maximum RDS(on) of 5 mΩ with a 175 A pulsed output current.

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EPC to Show GaN-Enabled Large Area Wireless Power and High Resolution LiDAR at 2018 CES

EPC to Show GaN-Enabled Large Area Wireless Power and High Resolution LiDAR at 2018 CES

Within the AirFuelTM Alliance booth at CES 2018, EPC will show how gallium nitride (GaN) semiconductors are at the core of large surface area wireless power. In the EPC hospitality suite, wirelessly powered systems for the home and GaN based, industry-leading LiDAR systems used in autonomous vehicles will be on display.

EL SEGUNDO, Calif. — December 2017 — Efficient Power Conversion (EPC) will be demonstrating the power of eGaN® technology to enhance two game-changing consumer applications – wireless power and LiDAR for self-driving cars – at the 2018 Consumer Electronics Show (CES) in Las Vegas, January 9th through the 12th.

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WIRELESS POWER GaN FETs Enable Large Area Wireless Power Transfer

WIRELESS POWER GaN FETs Enable Large Area Wireless Power Transfer

To ensure widespread adoption, wireless power systems need to move beyond small charging pads and become active power sources over large surface areas. For magnetic resonant systems, this demands fundamental changes in coil technology, system architecture, and power amplifiers. Gallium nitride based amplifiers have proven capable of delivering 60 W with greater than 90 percent efficiency into the transmit coil over a wide load range.

By: Yuanzhe Zhang and Michael A. de Rooij
Power Electronics Europe
November/December 2017
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150-Ampere LiDAR Development Board Can Deliver 5 Nano Second Pulses Using eGaN Technology From EPC

150-Ampere LiDAR Development Board Can Deliver 5 Nano Second Pulses Using eGaN Technology From EPC

Ultra-fast transition eGaN FETs used on the EPC9126HC can drive high current pulses up to 150 A and pulse widths as low as 5 ns, thus enhancing the quality of information a LiDAR system will detect, including the accuracy, precision, and processing speed.

EL SEGUNDO, Calif. — November 2017 — Efficient Power Conversion Corporation (EPC) announces the availability of the EPC9126HCa 100 V, 150 A high current pulsed laser diode driver evaluation board. In a LiDAR system, used to create 3-D maps for autonomous vehicle applications, speed and accuracy of object detection is critical. As demonstrated by this board, the rapid transition capability of eGaN FETs provide power pulses to drive the laser up to ten times faster than an equivalent MOSFET, thus enhancing the overall performance of a LiDAR system.

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Efficient Power Conversion Corporation’s (EPC) eGaN Transistor Wins 2017 Impact Award from Electronics Component News Magazine

Efficient Power Conversion Corporation’s (EPC) eGaN Transistor Wins 2017 Impact Award from Electronics Component News Magazine

EPC2040, an eGaN® power transistor optimized for LiDAR applications, placed first in the Passive Components & Discrete Semiconductors category of ECN magazine’s prestigious 2017 Impact Award.

EL SEGUNDO, Calif — November  2017 Efficient Power Conversion Corporation’s (EPC) is proud to announce that Electronic Component News (ECN) — a leading trade publication for electronic design engineers — has awarded the EPC2040, enhancement mode gallium nitride (eGaN) transistor its ECN Impact Award for 2017 in the Passive Components and Discrete Semiconductors category.

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