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IEEE Power Electronics Society (PELS) Webinar, “Using Gallium Nitride (GaN) FETs for Envelope Tracking Buck Converters”

On September 3rd IEEE PELS will offer a webinar by Dr. Johan Strydom discussing the contribution of gallium nitride power transistors to meet the demanding system bandwidth requirements of envelope tracking applications. EL SEGUNDO, Calif.— August 2014 — An Efficient Power Conversion Corporation (EPC) expert on the application of gallium nitride transistors in envelope tracking power circuit design will conduct a one-hour webinar sponsored by the IEEE Power Electronics Society (PELS) on September 3rd from 11:00 AM to 12:00 AM (EDT). Discrete GaN power devices offer ... Read more
Categories: Press Releases

Efficient Power Conversion (EPC) Experts Present Benchmark Performance with New Generation eGaN FETs at Key Power Industry Conferences in China

EPC to present latest generation eGaN technology at two industry-leading conferences in China – the 3rd Wireless Power World 2014 and IIC China Power Management and Power Semiconductor EL SEGUNDO, Calif. — August, 2014 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power transistors will deliver application-focused presentations at two industry tradeshows in China: The 3rd Wireless Power World 2014, Shanghai, China EPC experts will show how the superior characteristics of eGaN® ... Read more
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Efficient Power Conversion (EPC) Lends Support to “The Little Box Challenge” presented by Google and IEEE to Build a (Much) Smaller Power Inverter

eGaN® power transistors are available to help contestants in their design of extremely small power inverters in their attempt to win the “Little Box Challenge” presented by Google and IEEE, an open competition to build a (much) smaller power inverter. To tweet this news, copy and paste http://bit.ly/EPCLBC to your Twitter handle with #LittleBoxChallenge EL SEGUNDO, Calif.—July 2014 — Efficient Power Conversion Corporation (EPC) announces its support for contestants in “Little Box Challenge” presented by Google and IEEE. Little Box Challenge, ... Read more
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Efficient Power Conversion (EPC) Introduces Complete A4WP Compliant High Efficiency Wireless Power Transfer Demonstration Kit Delivering 35 W and Operating at 6.78 MHz

Superior characteristics of eGaN® FETs, such as low output capacitance, low input capacitance, low parasitic inductances, and small size make them ideal for increasing efficiency in highly resonant, Rezence (A4WP) compliant, wireless power transfer systems. To tweet this news, copy and paste http://bit.ly/EPCWiPoPR to your Twitter handle with #GaNFET EL SEGUNDO, Calif.—July 2014 — Efficient Power Conversion Corporation (EPC) today announces the immediate availability of a complete demonstration wireless power transfer kit. The 40 V (EPC9111) or 100 V (EPC9112) ... Read more
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Efficient Power Conversion (EPC) Widens the Performance Gap with the Aging Power MOSFET with “Off-the-Shelf” High Performance Gallium Nitride Power Transistors

eGaN® power transistors continue to raise the bar for power conversion performance. Lower on-resistance, lower capacitance, higher current, and superior thermal performance enable power converters with greater than 98% efficiency. To tweet this news, copy and paste http://bit.ly/EPCXLPR1407 to your Twitter handle with #GaNFET EL SEGUNDO, Calif.—July 2014 — Efficient Power Conversion Corporation (EPC) announces the introduction of six new-generation power transistor products and corresponding development boards. Ranging from 30 V to 200 V, these products provide ... Read more
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Efficient Power Conversion (EPC) Introduces High Efficiency Wireless Power Transfer Demonstration System Operating at 6.78 MHz Featuring High Frequency Gallium Nitride (eGaN) FETs

The superior characteristics of eGaN® FETs, such as low output capacitance, low input capacitance, low parasitic inductances, and small size make them ideal for increasing efficiency in highly resonant, Rezence (A4WP) compliant, wireless power transfer systems. EL SEGUNDO, Calif.—June, 2014 — Efficient Power Conversion Corporation (EPC) today announce the introduction of demonstration boards for wireless power transfer in an innovative high performance topology; Zero Voltage Switching (ZVS) Class-D. The EPC9506 and EPC9507 amplifier (source) boards utilize the high ... Read more
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Efficient Power Conversion Corporation (EPC) Gallium Nitride Technology Receives EDN China 10th Anniversary Leading Technology Award

EPC enhancement-mode gallium nitride (eGaN®) power transistors recognized by leading industry trade journal as displacement technology for the venerable silicon MOSFET EL SEGUNDO, Calif. – June, 2012 – Efficient Power Conversion Corporation (www.epc-co.com) has been recognized with a EDN China 10th Anniversary Innovation Award for Leading Technology in the Most Influential Technology for the Future category. The EDN China Innovation Award is a benchmark for recognizing technology, product, and company innovation by the voting of electronics design engineers and managers ... Read more
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Tags: Awards

Dr. John Glaser Joins Efficient Power Conversion (EPC) as Director, Applications Engineering

Dr. Glaser will be creating benchmark power converter designs and assisting customers in the use of eGaN FETs® for high frequency, high performance power conversion systems EL SEGUNDO, Calif.—June 2014 — Efficient Power Conversion Corporation (EPC) is proud to announce that Dr. John Glaser has joined the EPC engineering team as Director, Applications Engineering. As a member of the EPC applications team, Dr. Glaser’s focus will be on designing lower loss and higher power density benchmark architectures and converters that demonstrate the benefits of using ... Read more
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Efficient Power Conversion (EPC) to Present Gallium Nitride (GaN) Technology for Benchmark Efficiency Wireless Energy Converters at 2014 PCIM Asia Conference

At PCIM Asia conference in Shanghai, China, an EPC applications expert will demonstrate the superiority of GaN transistors compared to silicon power MOSFETs in wireless energy transfer applications. EL SEGUNDO, Calif. — June, 2014 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power transistors will be presenting an application-focused presentation at PCIM Asia highlighting the efficiency advantage of using eGaN FETs in wireless power transfer. The conference will be held in Shanghai, China from ... Read more
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Efficient Power Conversion (EPC) Introduces Plug and Play 97% Efficient Half-Bridge Converter DrGaNPLUS Evaluation Board Featuring Gallium Nitride Transisto

DrGaNPLUS EPC9202 100 V, 10 A board demonstrates the extreme size reduction and efficiency enhancement for power conversion achieved using high frequency switching eGaN® power transistors EL SEGUNDO, Calif.— May 2014 — Providing an easy-to-use way for power systems designers to evaluate the exceptional performance of gallium nitride transistors, Efficient Power Conversion Corporation (EPC) introduces DrGaNPLUS evaluation boards. These boards are proof-of-concept designs that integrate all necessary components of a half-bridge circuit into a single, extremely small ... Read more
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IEEE Power Electronics Society (PELS) Webinar, “GaN Transistors – Crushing Silicon in Wireless Energy Transfer”

On June 4 IEEE PELS will offer a webinar by Alex Lidow and Michael de Rooij discussing the contribution of eGaN® power transistors to increasing efficiency in wireless power transfer systems. EL SEGUNDO, Calif.— May 2014 — Efficient Power Conversion Corporation (EPC) experts on the design and use of gallium nitride transistors will conduct a one-hour webinar sponsored by the IEEE Power Electronics Society (PELS) on June 4th from 10:30 AM to 11:30 AM (EDT). In this webinar eGaN FETs are compared with MOSFETs in highly resonant wireless energy transfer using class-E, ... Read more
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EPC to Present Gallium Nitride (GaN) Technology for Envelope Tracking Power Supplies, High Efficiency Wireless Power Transfer and High Frequency Buck Converters at the 2014 PCIM Europe Conference

At PCIM Europe conference, EPC’s CEO and applications experts will demonstrate the superiority of GaN transistors compared to silicon power MOSFETs in a wide variety of applications. EL SEGUNDO, Calif. — May, 2014 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs will be presenting three application-focused technical presentations at PCIM Europe. The conference will be held in Nuremberg, Germany from May 20th through the 22th. Participants attending EPC sessions will learn about ... Read more
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Efficient Power Conversion Corporation (EPC) Accelerates Learning Curve for Power System Design Engineers with Launch of Video Podcast Series on Gallium Nitride (GaN) Power Transistors

Produced by industry experts, EPC has posted an eleven-part educational video podcast series on the theory, design basics and applications for gallium nitride power transistors. EL SEGUNDO, Calif. – April 2014 - Efficient Power Conversion Corporation (www.epc-co.com) has created and posted on line an eleven-part educational video podcast series designed to provide power system design engineers a technical foundation and application-focused toolset on how to design more efficient power conversion systems using gallium nitride-based transistors. Beyond giving an overview of the ... Read more
Categories: Press Releases

Efficient Power Conversion (EPC) Introduces Development Board for High Current, High Step-Down Buck Converter Applications

EPC9016 development board features 40 V, 33 A enhancement mode gallium nitride (eGaN®) FETs in parallel operation increasing current capability by 67% and optimum layout techniques maximize efficiency. EL SEGUNDO, Calif.— April, 2014 — Efficient Power Conversion Corporation (EPC) introduces the EPC9016 half-bridge development board for high current, high step-down voltage, buck Intermediate Bus Converter (IBC) applications using eGaN FETs. In this application two low-side (synchronous rectifier) field effect transistors (FETs) are connected in parallel since they will be ... Read more
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Efficient Power Conversion (EPC) to Present DC-DC Converter Using eGaN® Transistors Operating at 10 MHz with 89% Peak Efficiency and the Ability to Operate in Harsh Environmental Conditions at GOMACTe

Alex Lidow, EPC CEO and co-founder, will be presenting results of a newly released family of enhancement mode (GaN®) HEMT transistors designed for high frequency operation into the 10 MHz range. The presentation will also highlight the stability of these devices under radiation exposure making them an ideal choice for high reliability applications. EL SEGUNDO, Calif. — March, 2014 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power transistors will be presenting at the 39th Annual Government ... Read more
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Efficient Power Conversion (EPC) Experts to Demonstrate How eGaN FETs Increase Efficiency by 20% in Wireless Power Applications at Key Power Industry Conferences in Asia

EPC experts will be making technical presentations on GaN FET technology at three industry-leading conferences in Asia – Electronica China, IIC China Power Management and Semiconductor and International Workshop on Wide Band Gap Power Electronics 2014 in Taiwan EL SEGUNDO, Calif. — March, 2014 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power transistors will be making presentations at three industry-leading power conferences in Asia. At two conferences in Shanghai, China on March ... Read more
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Efficient Power Conversion (EPC) Introduces Development Boards With Switching Transition Speeds in the Sub-Nanosecond Range and Capable of Hard-Switching Applications Above 10 MHz

Development boards in half-bridge topology with onboard gate drives simplify evaluation of the EPC8000 family of ultra high frequency, high performance eGaN® FETs now available from EPC. EL SEGUNDO, Calif.— March 2014 — Efficient Power Conversion Corporation (EPC) introduces a family of development boards, the EPC9022 through EPC9030, to simplify evaluation of the groundbreaking EPC8000 family of ultra high frequency eGaN power transistors. The EPC8000 family of high frequency eGaN FETs has switching transition speeds in the sub-nanosecond range, making them capable ... Read more
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Efficient Power Conversion (EPC) to Present Gallium Nitride (GaN) Technology for High Frequency Resonant and Envelope Tracking Power Supplies at the 2014 Applied Power Electronics and Exposition Confe

At the IEEE APEC 2014 power electronics industry conference, EPC applications experts will make technical presentations on GaN FET technology and applications showing the superiority of GaN transistors compared to silicon power MOSFETs. EL SEGUNDO, Calif. — February, 2014 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs will be presenting three application-focused technical presentations at APEC 2014. Participants will learn about high frequency resonant converter, and high-frequency, ... Read more
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Efficient Power Conversion Corporation (EPC) Expands High Frequency eGaN® Power Transistor Family Capable of Amplification into the Multiple GHz Range

EPC8010 100 V gallium nitride FET is optimized for high frequency applications with positive gain into the 3 GHz range. EL SEGUNDO, Calif. – January 2014 – Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs extends its family of high-speed, high performance transistors with the EPC8010 power transistor. Sold in die form, the EPC8010 is a mere 1.75 mm2 with 100 VDS. Optimized for high speed switching, the EPC8010 has a maximum RDS(on) of 160 milliohms and input gate charge in the hundreds of ... Read more
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Efficient Power Conversion (EPC) Introduces High Current Development Board Featuring Multiple Half-Bridges in Parallel

EPC9013 development board features 100 V eGaN FETs with a 35 A maximum output current using four half-bridge configuration in parallel and a single onboard gate drive. EL SEGUNDO, Calif.—February, 2014 — Efficient Power Conversion Corporation (EPC) introduces the EPC9013 development board featuring the 100 V EPC2001 enhancement mode (eGaN®) field effect transistor (FET) operating up to a 35 A maximum output current in Buck mode using a four half-bridge configuration in parallel and a single onboard gate drive. This innovative design increases output power without ... Read more
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