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Efficient Power Conversion (EPC) Introduces Monolithic Gallium Nitride Power Transistor Half Bridge Enabling over 97% System Efficiency for a 48 V to 12 V Point of Load Converter at 22 A Output

Efficient Power Conversion (EPC) Introduces Monolithic Gallium Nitride Power Transistor Half Bridge Enabling over 97% System Efficiency for a 48 V to 12 V Point of Load Converter at 22 A Output

With the new 100 V EPC2104 eGaN®half bridge, a system efficiency of a complete buck converter using the EPC2104 is greater than 97% at 22 A switching at 300 kHz, and approaching 97% at 22 A when switching at 500 kHz, achieved when converting from 48 V to 12 V.

EL SEGUNDO, Calif. — April 2015 — EPC announces the EPC2104, 100 V enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN® power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated, resulting in a 50% reduction in board area occupied by the transistors. This increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the end user’s power conversion system.

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Categories: Press Releases

Efficient Power Conversion (EPC) Introduces Wide Pitch eGaN FETs Enabling High Current in Small Footprint

Efficient Power Conversion (EPC) Introduces Wide Pitch eGaN FETs Enabling High Current in Small Footprint

New EPC2029 eGaN® power transistor extends EPC’s power transistor portfolio with high performance, wider pitch chip-scale package for ease of high volume manufacturing and enhanced compatibility with mature manufacturing processes and assembly lines.

EL SEGUNDO, Calif.—April 2015 — Efficient Power Conversion Corporation (EPC) announces the introduction of an eGaN FET designed with a wider pitch connection layout. The first in a new family of “Relaxed Pitch” devices, the EPC2029 80 V, 31 A eGaN FET features a 1 mm ball pitch. The wider pitch allows for placement of additional and larger vias under the device to enable high current carrying capability despite the extremely small 2.6 mm x 4.6 mm footprint.

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Categories: Press Releases

Efficient Power Conversion (EPC) Expands Family of Plug and Play DrGaNPLUS Evaluation Boards – High Power Converters in a Small Footprint

Efficient Power Conversion (EPC) Expands Family of Plug and Play DrGaNPLUS Evaluation Boards – High Power Converters in a Small Footprint

DrGaNPLUS EPC9201 30 V, 40 A and EPC9203 80 V, 20 A evaluation boards demonstrate the extreme size reduction and efficiency enhancement for power conversion that can be achieved using high frequency switching eGaN power transistors.

EL SEGUNDO, Calif.— March 2015 — Providing an easy-to-use way for power systems designers to evaluate the exceptional performance of gallium nitride transistors and get their products into volume production quickly, Efficient Power Conversion Corporation (EPC) announces the expansion of its portfolio of DrGaNPLUS evaluation boards. These boards are proof-of-concept designs that integrate all necessary components of a half-bridge circuit into a single, extremely small PCB-based module that can be readily mounted to demonstrate the excellent performance of a GaN transistor power conversion solution.

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Categories: Press Releases

500 Watt Eighth Brick DC-DC Converter Achieves 96.7% Efficiency – EPC Demonstration Board Featuring eGaN FETs Delivers Fully Regulated, Isolated Output 12 V, 42 A Output

500 Watt Eighth Brick DC-DC Converter Achieves 96.7% Efficiency – EPC Demonstration Board Featuring eGaN FETs Delivers Fully Regulated, Isolated Output 12 V, 42 A Output

EPC9115 DC-DC bus converter showcases superior performance achieved using eGaN FETS with designated drivers in a conventional fully regulated, isolated eighth brick DC-DC converter topology.

EL SEGUNDO, Calif. — March 2015 — Efficient Power Conversion Corporation (EPC) introduces the EPC9115, a demonstration design for a 12 V, 42 A output with an input range of 48 V to 60 V. The demonstration board features enhancement-mode (eGaN®) power transistors – the EPC2020 (60 V) and EPC2021 (80V) – along with the LM5113 half-bridge driver and UCC27611 low side driver from Texas Instruments. The power stage is a conventional hard-switched 300 kHz isolated buck converter.

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Categories: Press Releases

Efficient Power Conversion Corporation (EPC) Publishes Wireless Power Handbook, a Guide to Designing an Efficient Amplifier for a Wireless Power Transfer System

Efficient Power Conversion Corporation (EPC) Publishes Wireless Power Handbook, a Guide to Designing an Efficient Amplifier for a Wireless Power Transfer System

Wireless Power Handbook is a guide to designing an efficient amplifier for a wireless power transfer system, taking advantage of the superior performance of gallium nitride power transistors.

EL SEGUNDO, Calif. – March 2015 – Efficient Power Conversion Corporation (www.epc-co.com) announces the publication of a practical engineering handbook designed to provide power system design engineers valuable experiences and points of reference critical to understanding and designing highly efficient wireless power systems using gallium nitride-based transistors. As a supplement to EPC’s GaN Transistors for Efficient Power Conversion, this new practical guide provides step-by-step analysis on the use of GaN transistors in wireless power transfer. /p> Read more

Categories: Press Releases

Efficient Power Conversion (EPC) to Demonstrate 500 W High Power Density GaN-based Eighth Brick DC-DC Converter at the 2015 Applied Power Electronics and Exposition Conference (APEC)

Efficient Power Conversion (EPC) to Demonstrate 500 W High Power Density GaN-based Eighth Brick DC-DC Converter at the 2015 Applied Power Electronics and Exposition Conference (APEC)

At the IEEE APEC 2015 power electronics industry conference, EPC applications experts will make eight technical presentations on GaN FET technology and applications showing the superiority of GaN transistors compared to silicon power MOSFETs.

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Categories: Press Releases

Professional Quality Sound with 96% Power Efficiency – EPC Demonstration Board Featuring eGaN FETs Delivers High Quality Audio Performance in Space Saving Design

Professional Quality Sound with 96% Power Efficiency – EPC Demonstration Board Featuring eGaN FETs Delivers High Quality Audio Performance in Space Saving Design

EPC9106 Class-D audio amplifier reference design, using high frequency switching gallium nitride power transistors, demonstrates efficiency enhancement, size reduction and eliminates need for a heat sink while delivering prosumer quality sound.

EL SEGUNDO, Calif. — February 2015 — Efficient Power Conversion Corporation (EPC) introduces the EPC9106, a reference design for a 150 W, 8 ohm Class-D audio amplifier.

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Categories: Press Releases

Efficient Power Conversion (EPC) Introduces Monolithic Gallium Nitride Power Transistor Half Bridge Enabling over 97% System Efficiency for a 48 V to 12 V Buck Converter at 20 A Output

Efficient Power Conversion (EPC) Introduces Monolithic Gallium Nitride Power Transistor Half Bridge Enabling over 97% System Efficiency for a 48 V to 12 V Buck Converter at 20 A Output

Efficient Power Conversion introduces the EPC2102, 60 V and EPC2103, 80 V half bridges, expanding its award winning family of gallium nitride power transistor products.

EL SEGUNDO, Calif. — January 2014 — EPC announces the EPC2102, 60 V and the , 80 V enhancement-mode monolithic GaN transistor half bridges.

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Categories: Press Releases

Efficient Power Conversion (EPC) Introduces Enhancement Mode 450 V Gallium Nitride Power Transistors for High Frequency Applications

Efficient Power Conversion (EPC) Introduces Enhancement Mode 450 V Gallium Nitride Power Transistors for High Frequency Applications

EPC2027 eGaN® FET offers power systems designers a 450 V power transistor capable of 4ns rise times for high frequency DC-DC converters and medical diagnostic instruments.

EL SEGUNDO, Calif. — January 2015 — EPC announces the EPC2027, a 450 V normally off (enhancement mode) power transistor for use in applications requiring high frequency switching in order to achieve higher efficiency and power density. Applications enhanced by high voltage higher switching speeds include ultra-high frequency DC-DC converters, medical diagnostic equipment, solar power inverters, and LED lighting.

The EPC2027 has a voltage rating of 450 V and maximum RDS(on) of 400 mΩ with a 4 A output. It is available in passivated die form with solder bars for efficient heat dissipation and ease of assembly. The EPC2027 measures 1.95 mm x 1.95 mm for increased power density.

“As off-line adapters and inverters increasingly push toward smaller size, less weight, and higher power density, the demand for corresponding higher voltage and faster switching speeds is increasing. The 450 V EPC2027 allows power designers to increase the switching frequency of their off-line power conversion systems for increased efficiency and smaller footprint,” said Alex Lidow, EPC’s co-founder and CEO.

Development Board

The EPC9044 development board, featuring the EPC2027, is in a half bridge configuration with on board gate driver, gate drive supply and bypass capacitors. This 2” x 1.5” board has been laid out for optimal switching performance and contains all critical components for easy evaluation of the EPC2027 eGaN® FET.

Price and Availability

The EPC2027 eGaN FETs are priced for 1K units at $5.81 each

The EPC9044 development boards are priced at $137.75 each

Both are available for immediate delivery from Digi-Key at http://www.digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en

Design Information and Support for eGaN FETs:

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, Read more

Categories: Press Releases

Efficient Power Conversion Corporation’s (EPC) Monolithic Half-Bridge eGaN Transistor Family Named Product of the Year by Electronic Products Magazine

Efficient Power Conversion Corporation’s (EPC) Monolithic Half-Bridge eGaN Transistor Family Named Product of the Year by Electronic Products Magazine

EPC2100 GaN power transistor single-chip half-bridge products honored with award for innovative advancement in discrete semiconductors.

EL SEGUNDO, Calif — January 2015 — Efficient Power Conversion Corporation’s (EPC) enhancement-mode gallium nitride on silicon (eGaN®) monolithic half-bridge power transistor products have been honored with an Electronic Products’ Product of the Year award.

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Categories: Press Releases

Efficient Power Conversion (EPC) Introduces Monolithic Gallium Nitride Power Transistor Half Bridge enabling over 87% System Efficiency for a 28 V to 1 V Point of Load Converter at 14 A output.

The EPC2101 GaN power monolithic half bridge offers power systems designers a solution that increases efficiency and power density. For a complete buck converter, system efficiency approaches 87% at 14 A, and over 82% at 30 A when switching at 500 kHz and converting from 28 V to 1 V while reducing the board area occupied by transistors by 50% when compared to a discrete solution.

EL SEGUNDO, Calif. — November 2014 — EPC announces the EPC2101, 60 V enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN® power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated, resulting in a 50% reduction in board area occupied by the transistors. This increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the end user’s power conversion system. The EPC2101 is ideal for high frequency DC-DC conversion.

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Categories: Press Releases

Efficient Power Conversion (EPC) Introduces Monolithic Gallium Nitride Half Bridge enabling 48 V to 12 V System Efficiency at 20 A output over 97%

EPC2105 GaN half bridge offers power systems designers a solution that increases efficiency and power density for complete buck converter systems approaching 98% at 10 A when switching at 300 kHz and converting from 48 V to 12 V, and 84% at 14 A when switching at 300 kHz and converting from 48 V to 1.0 V.

EL SEGUNDO, Calif. — November 2014 — EPC announces the EPC2105, 80 V enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN® power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated. This increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the end user’s power conversion system. The EPC2105 is ideal for high frequency DC-DC conversion and enables efficient single stage conversion from 48 V directly to 1 V system loads.

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Categories: Press Releases

Efficient Power Conversion (EPC) Introduces Wide-Input, 20 Amp GaN-Based Buck Converter Demonstration Board for Telecom, Industrial, and Medical Applications

Efficient Power Conversion (EPC) Introduces Wide-Input, 20 Amp GaN-Based Buck Converter Demonstration Board for Telecom, Industrial, and Medical Applications

EPC9118 demonstrates size reduction and efficiency enhancement for power conversion readily achieved using high frequency switching eGaN® FETs for supply voltages up to 48 V or more.

EL SEGUNDO, Calif.—October 2014 — Efficient Power Conversion Corporation (EPC) introduces the EPC9118, a fully functional buck power conversion demonstration circuit. This board is a 30 V-60 V input to 5 V, 20 A maximum output current, 400 kHz buck converter. It features the EPC2001 and EPC2015 enhancement-mode (eGaN®) field effect transistors (FETs), as well as the LTC3891 buck controller. This buck converter design is ideal for distributed power solutions in telecom, industrial, and medical applications.

The EPC9118 board contains the complete power stage (including eGaN FETs, driver, inductor and input/output caps) in a compact 1” x 1.3” layout to showcase the performance that can be achieved using the eGaN FETs and a traditional MOSFET controller together. The EPC9118 demonstration board is 2.5” square and contains a fully closed loop buck converter with optimized control loop.

Despite its small size, the board has peak power efficiency greater than 93% capable of delivering 20 amps at 5 volts with a 36 V input. To assist the design engineer, the EPC9118 demonstration board is easy to set up and contains various probe points to facilitate simple waveform measurement and efficiency calculation.

A Quick Start Guide containing set up procedures, circuit diagram, performance curves and a bill of material is available at http://epc-co.com/epc/Products/DemoBoards/EPC9118.aspx

EPC9118 demo boards are priced at $237.19 each and are available for immediate delivery from Digi-Key at http://www.digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en

Design Information and Support for eGaN FETs:

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and Read more

Categories: Press Releases

Efficient Power Conversion Gallium Nitride (GaN) Experts Release Second Edition Textbook with Power Conversion Applications Focus

GaN Transistors for Efficient Power Conversion” textbook provides both theory and applications for gallium nitride transistors.

EL SEGUNDO, CA – October 2014 – Efficient Power Conversion Corporation (EPC) announce the publication of the second edition of “GaN Transistors for Efficient Power Conversion,” a textbook written by power conversion industry experts and published by John Wiley and Sons.

This textbook is designed to provide power system design engineering students, as well as practicing engineers, basic technical and application-focused information on how to design more efficient power conversion systems using gallium nitride-based transistors.

Gallium nitride (GaN) is an emerging technology that promises to displace the venerable silicon MOSFETs in the next generation of power transistors. As silicon approaches its performance limits, GaN devices offer superior conductivity and switching characteristics, allowing designers to greatly reduce system power losses, size, weight, and cost.

This timely second edition has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. This book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are

  • Discussions on the fundamental physics of these power semiconductors
  • Layout and other circuit design considerations
  • Application examples employing GaN including RF envelope tracking, wireless power transfer class-D audio and harsh radiation environments
  • Specific design techniques when employing GaN devices

According to Dr. Fred C. Lee, Director, Center for Power Electronics Systems at Virginia Tech, “This book is a gift to power electronics engineers. It offers a comprehensive view, from device physics, characteristics, and modeling to device and circuit layout considerations and gate drive design, with design considerations for both hard switching and soft switching. Additionally, it further illustrates the utilization of GaN in a wide range of emerging applications.”

GaN Transistors for Efficient Power Conversion” is published by John Wiley and Sons and is available for immediate purchase at Amazon (www.amazon.com).

About the Authors

Collectively, the authors have over ninety-years of experience working in power transistor design and applications. All four authors have doctorates in scientific disciplines and are widely recognized published authors. They are pioneers in the emerging GaN transistor technology, with Dr. Alex Lidow concentrating on transistor process design and Drs. Johan Strydom, Michael DeRooij, and David Reusch focusing on power transistor applications.

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, Read more

Categories: Press Releases

Efficient Power Conversion (EPC) Introduces 300 V Gallium Nitride Power Transistors for High Frequency Applications

EPC2025 GaN power transistor offers power systems designers a 300 V power transistor capable of 2ns rise times for high frequency DC-DC converters and medical diagnostic instruments.

EL SEGUNDO, Calif. — September 2014 — EPC announces the EPC2025, a 300 V power transistor for use in applications requiring high frequency switching in order to achieve higher efficiency and power density. Applications enhanced by higher switching speeds include ultra-high frequency DC-DC converters, medical diagnostic equipment, power inverters, and LED lighting.

The EPC2025 has a voltage rating of 300 V and maximum RDS(on) of 150 mΩ with a 4 A output. It is available in passivated die form with solder bars for efficient heat dissipation and ease of assembly. The EPC2025 measures 1.95 mm x 1.95 mm for increased power density.

“As end-systems increasingly require smaller size DC-DC power converters, especially those used in portable equipment, the demand for corresponding higher speed switching power converters is increasing. The EPC2025 allows power designers to increase the switching frequency of their power conversion systems for increased efficiency and smaller footprint,” said Alex Lidow, EPC’s co-founder and CEO.

Development Board

The EPC9042 development board is a 300 V maximum device voltage, half bridge with onboard gate driver, featuring the EPC2025, onboard gate drive supply and bypass capacitors. This 2” x 1.5” board has been laid out for optimal switching performance and contains all critical components for easy evaluation of the 300 V EPC2025 eGaN FET.

Price and Availability

The EPC2025 eGaN FETs are priced for 1K units at $5.29 each

The EPC9042 development boards are priced at $137.75 each

Both are available for immediate delivery from Digi-Key at http://www.digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en

Design Information and Support for eGaN FETs:

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, Read more

Categories: Press Releases

Efficient Power Conversion (EPC) Introduces Monolithic Gallium Nitride Power Transistor Half Bridge enabling 12 V to 1.2 V Point of Load System Efficiency at 25 A output over 90%

EPC2100 GaN power transistor offers power systems designers a solution that increases efficiency and power density for complete buck converter systems approaching 93% at 10 A, and over 90.5% at 25 A when switching at 500 kHz and converting from 12 V to 1.2 V.

EL SEGUNDO, Calif. — September 2014 — EPC announces the EPC2100, the first commercially available enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated. This increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the end user’s power conversion system.

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Categories: Press Releases

Efficient Power Conversion (EPC) Experts Present Benchmark Performance with Gallium Nitride (GaN) Technology at the 2014 Darnell’s Energy Summit

EPC’s CEO and applications experts will conduct a half-day seminar and several technical presentations, including an invited plenary session presentation, on a multitude of applications enabled by this game-changing technology.

EL SEGUNDO, Calif. — September 2014 — Efficient Power Conversion Corporation will be presenting an educational seminar and several application-focused technical presentations at Darnell’s Energy Summit 2014. The conference will be held in Richmond, Virginia from September 23th through the 25th.

This summit combines efficient power conversion, green building design and smart grid electronics into a single conference. The presentations will focus on advanced power conversion technologies needed for the successful development of next-generation power systems. It is a solutions-oriented event, with a strong emphasis on practical advances in power electronics and energy efficiency.

Educational Seminar: GaN Transistors for Efficient Power Conversion

Expanding on the GaN FET technology textbook written by EPC, this seminar will explain how GaN technology works. This session will discuss fundamental GaN technology and how to use these devices. To showcase their real-world value, several applications including efficient DC-DC conversion, high frequency envelope tracking, and wireless power transfer will be presented. The seminar will conclude with a look at future of gallium nitride – an emerging displacement technology for MOSFETs.

Technical Presentations by EPC Experts Featuring GaN FETs:

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, Read more

Categories: Press Releases

IEEE Power Electronics Society (PELS) Webinar, “Using Gallium Nitride (GaN) FETs for Envelope Tracking Buck Converters”

On September 3rd IEEE PELS will offer a webinar by Dr. Johan Strydom discussing the contribution of gallium nitride power transistors to meet the demanding system bandwidth requirements of envelope tracking applications.

EL SEGUNDO, Calif.— August 2014 — An Efficient Power Conversion Corporation (EPC) expert on the application of gallium nitride transistors in envelope tracking power circuit design will conduct a one-hour webinar sponsored by the IEEE Power Electronics Society (PELS) on September 3rd from 11:00 AM to 12:00 AM (EDT).

Discrete GaN power devices offer superior hard-switching performance over MOSFETs and are crucial for the development of switching converters for envelope tracking. In this seminar, the latest family of high frequency enhancement-mode gallium nitride power transistors on silicon (eGaN® FETs) will be presented in a few multi-megahertz buck converters. The different system-level parasitics will be discussed and their impact evaluated based upon the experimental results.

The presenter will be Johan Strydom, EPC Vice President of Applications Engineering. Dr. Strydom is widely published in the industry, including being co-author of GaN Transistors for Efficient Power Conversion, the first textbook on the design and applications of gallium nitride transistors.

Webinar Registration Information:

Title: Using Gallium Nitride (GaN) FETs for Envelope Tracking Buck Converters
Date: Wednesday, September 3, 2014
Time: 11:00 AM – 12:00 AM (EDT)
Registration:http://www.ieee-pels.org/products/pels-upcoming-webinars/2483-ieee-pels-webinar-series-using-egan-fets-for-envelope-tracking-buck-converters-by-johan-strydom
Fee: Free of Charge

About IEEE Power Electronics Society (PELS)

The Power Electronics Society is one of the fastest growing technical societies of the Institute of Electrical and Electronics Engineers (IEEE). For over 20 years, PELS has facilitated and guided the development and innovation in power electronics technology. This technology encompasses the effective use of electronic components, the application of circuit theory and design techniques, and the development of analytical tools toward efficient conversion, control and condition of electric power.

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

eGaN Read more

Categories: Press Releases

Efficient Power Conversion (EPC) Experts Present Benchmark Performance with New Generation eGaN FETs at Key Power Industry Conferences in China

EPC to present latest generation eGaN technology at two industry-leading conferences in China – the 3rd Wireless Power World 2014 and IIC China Power Management and Power Semiconductor

EL SEGUNDO, Calif. — August, 2014 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power transistors will deliver application-focused presentations at two industry tradeshows in China:

  • The 3rd Wireless Power World 2014, Shanghai, China
    EPC experts will show how the superior characteristics of eGaN® FETs, such as low output capacitance, low input capacitance, low parasitic inductances, and small size make them ideal for increasing efficiency in highly resonant, Rezence (A4WP) compliant, wireless power transfer systems. A comparison between amplifiers designed using MOSFETs and eGaN FETS will examine comparative peak power, load variation, and load regulation performance.
  • The IIC China Power Management and Power Semiconductor Conference, Shenzhen, China
    The latest generation eGaN FETs raise the bar for power conversion performance. The new family of eGaN FETs (Gen 4) has significant gains in key switching figures of merit that widen the performance gap with the aging power MOSFET. Application examples will include a 12 V to 1.2 V, 50 A, point of load converter achieving 93.5% efficiency, and a 48 V to 12 V, 30 A, non-isolated DC-DC intermediate bus converter achieving efficiency above 98%.
    • Gen 4 eGaN Technology
      Speaker: Peter Cheng, Asia Pacific Field Applications
      Director Date/Time: Thursday, September 4th at 3.40 p.m. to 4.20 p.m.

About Wireless Power World 2014

Visit http://www.wirelesspower-world.com/meeting/Sponsors/index.html for details.

About IIC China

Visit http://www.english.iic-china.com/ for details.

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, solar micro inverters, remote sensing technology (LiDAR), and

Read more
Categories: Press Releases

Efficient Power Conversion (EPC) Lends Support to “The Little Box Challenge” presented by Google and IEEE to Build a (Much) Smaller Power Inverter

eGaN® power transistors are available to help contestants in their design of extremely small power inverters in their attempt to win the “Little Box Challenge” presented by Google and IEEE, an open competition to build a (much) smaller power inverter.

To tweet this news, copy and paste http://bit.ly/EPCLBC to your Twitter handle with #LittleBoxChallenge

EL SEGUNDO, Calif.—July 2014 — Efficient Power Conversion Corporation (EPC) announces its support for contestants in “Little Box Challenge” presented by Google and IEEE. Little Box Challenge, with a $1,000,000 prize, is an open competition to build a (much) smaller power inverter. eGaN® FETs are ideal for this type of application due to their high power handling capability, ultra fast switching speeds, and small size.

Why Little Box Challenge?

The objective of Little Box Challenge is to create a smaller, cheaper, power inverter for use in solar power systems. The inverter is the part of the system that converts the DC power from the solar cells into the AC power that is compatible with the established power grid infrastructure. Reducing the cost of the inverter will have a significant impact on the overall system cost of solar power.

Why Use eGaN Power Transistors?

  • High Efficiency/Low Losses
    eGaN FET’s switching performance enables higher switching frequency compared to MOSFET solutions. Higher frequency reduces the size of energy storage elements which dominate inverter size.
  • Ultra Fast Switching Speed
    eGaN FETs’ small size and lateral structure give extremely low capacitance and zero QRR. Also, the Land Grid Array (LGA) package gives low inductance. These attributes enable unprecedented switching performance -- two to three times that of a MOSFET. Switching speed is the key to increasing switching frequency efficiently.
  • Small Size
    Gallium nitride (GaN) is a wide band gap device with superior conductivity compared to traditional MOSFET technology, resulting in smaller devices and lower capacitance for the same on resistance (RDS(on)).

Contestant Support

EPC is excited to be a supporter of this contest. If your team is interested in exploring the possibility of using EPC’s eGaN® FETs in a high power density inverter for the Little Box Challenge presented by Google and IEEE, visit us at http://epc-co.com/epc/LittleBoxChallenge.aspx.

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, solar micro inverters, remote sensing technology (LiDAR), and Read more

Categories: Press Releases
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