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Tesla Motors is releasing a new version of Autopilot overnight, adding features the company says will make it safer and more reliable. Investigators are probing what role the self-driving system played in a pair of fatal crashes in Florida and China.
September 21, 2016
Class A has been the serious audiophile's gold standard for decades. Today however, we are at the early stages of a seismic shift towards widespread Class D audiophile adoption. Why? Because a new type of Class D audio is quickly approaching the performance of Class A, with benefits not enjoyed by the reigning incumbent. A new transistor technology called Gallium Nitride (GaN) is poised to uproot the high-end audio world. In fact, GaN-based Class D is much more power-efficient than traditional, MOSFET-based Class D and offers orders of magnitude better performance.
September 17, 2016
The chief technology officer of a technology supplier that enables Tesla's semi-autonomous Autopilot driving technology believes the carmaker is pushing the safety envelope too far.
"It is not designed to cover all possible crash situations in a safe manner," Amnon Shashua, CTO and executive chairman at Israel-based Mobileye NV, told Reuters Wednesday.
September 15, 2016
In the future, self-driving cars will require laser-based sensing tech, and these systems will need new types of high-speed transistors and chips that can beat out silicon.
That’s the assertion of Alex Lidow, a Stanford PhD physicist, entrepreneur, and CEO and founder of Efficient Power Conversion (commonly called EPC), a company based in El Segundo, Calif. that makes transistors and chips out of a material that operates more quickly and efficiently—and costs less than silicon.
September 8, 2016
The first three installments in this series covered field reliability experience and stress test qualification of EPC’s enhancement-mode gallium nitride (eGaN) field effect transistors (FETs) and integrated circuits (ICs). Excellent field reliability that was documented is the result of applying stress tests covering the intended operating conditions the devices will experience within applications. Of equal importance is understanding the underlying physics of how eGaN devices will fail when stressed beyond intended operating conditions (e.g. datasheet parameters and safe operating area). This installment will take a deeper dive into the physics of failure centered around thermo-mechanical reliability of eGaN wafer level chip-scale packages (WLCSP).
September 7, 2016
EPC Phase Eight Reliability Report documents a combined total of over 8 million GaN device-hours with zero failures. The report examines, in detail, the stress tests that EPC devices are subjected to prior to release as qualified products and analyzes the physics of failure.
Bodo’s Power Systems
September 1, 2016
Gallium Nitride ICs: Increasing server power efficiencies -
Reducing waste power, cooling, and space aren't just data-center-size concerns; they're also battles fought inside the confines of each rack. And, sometimes, even one small change can make a big difference.
August 2, 2016