News

Sign up today to get the latest news and updates from EPC on new product announcements, applications work, and much more. Sign up for EPC email updates or text "EPC" to 22828.

Efficient Power Conversion (EPC) Introduces Complete A4WP Compliant High Efficiency Wireless Power Transfer Demonstration Kit Delivering 35 W and Operating at 6.78 MHz

Superior characteristics of eGaN® FETs, such as low output capacitance, low input capacitance, low parasitic inductances, and small size make them ideal for increasing efficiency in highly resonant, Rezence (A4WP) compliant, wireless power transfer systems.

To tweet this news, copy and paste http://bit.ly/EPCWiPoPR to your Twitter handle with #GaNFET

EL SEGUNDO, Calif.—July 2014 — Efficient Power Conversion Corporation (EPC) today announces the immediate availability of a complete demonstration wireless power transfer kit. The 40 V (EPC9111) or 100 V (EPC9112) wireless kits have three components:

  • Source (or amplifier) board
  • Class 3 A4WP compliant source (or transmit) coil
  • Category 3 A4WP compliant device (or receiving) board including coil

The system is capable of delivering up to 35 W into a DC load while operating at 6.78 MHz (the lowest ISM band). The purpose of this demonstration kit is to simplify the evaluation process of using eGaN FETs for highly efficient wireless power transfer. The EPC9111 and EPC9112 utilize the high frequency switching capability of EPC gallium nitride transistors to facilitate wireless power systems with greater than 75% efficiency.

Value of eGaN FETs in Wireless Power Transfer Systems

The requirements of wireless energy transfer systems include high efficiency, low profile, robustness to changing operating conditions and, in some cases, light weight. These requirements translate into designs that need to be efficient and able to operate at high switching speeds without a bulky heatsink. Furthermore the design must be able to operate over a wide range of coupling and load variations. The fast switching capability of eGaN FETs is ideal for highly resonant power transfer applications.

The popularity of highly resonant wireless power transfer is increasing rapidly, particularly for applications targeting portable device charging. The end applications are varied and evolving quickly from mobile device charging, to life-extending medical implementations, to safety-critical hazardous environments.

Source (Amplifier) Board

The source board is a highly efficient, A4WP compliant, Zero Voltage Switching (ZVS), Class-D amplifier featuring either the 40 V EPC2014 (EPC9111) or the 100 V EPC2007 (EPC9112) eGaN FET.

The source board is configured in an optional half-bridge topology (for single-ended configuration) or default full-bridge topology (for differential configuration), and include the gate driver(s) and oscillator that ensure operation of the system at 6.78 MHz.

These amplifier boards are available separately as EPC9506 and EPC9507 for evaluation in existing customer systems.

Source (Transmit) Coil

The Read more

Categories: Press Releases

Efficient Power Conversion (EPC) Widens the Performance Gap with the Aging Power MOSFET with “Off-the-Shelf” High Performance Gallium Nitride Power Transistors

eGaN® power transistors continue to raise the bar for power conversion performance. Lower on-resistance, lower capacitance, higher current, and superior thermal performance enable power converters with greater than 98% efficiency.

To tweet this news, copy and paste http://bit.ly/EPCXLPR1407 to your Twitter handle with #GaNFET

EL SEGUNDO, Calif.—July 2014 — Efficient Power Conversion Corporation (EPC) announces the introduction of six new-generation power transistor products and corresponding development boards. Ranging from 30 V to 200 V, these products provide significant reduction in RDS(on) greatly increasing their output current capability in applications such as high power density DC-DC converters, Point-of-Load (POL) converters, synchronous rectification in DC/DC and AC/DC converters, motor drives, LED lighting, and industrial automation.

Read more
Categories: Press Releases

Efficient Power Conversion (EPC) Introduces High Efficiency Wireless Power Transfer Demonstration System Operating at 6.78 MHz Featuring High Frequency Gallium Nitride (eGaN) FETs

The superior characteristics of eGaN® FETs, such as low output capacitance, low input capacitance, low parasitic inductances, and small size make them ideal for increasing efficiency in highly resonant, Rezence (A4WP) compliant, wireless power transfer systems.

EL SEGUNDO, Calif.—June, 2014 — Efficient Power Conversion Corporation (EPC) today announce the introduction of demonstration boards for wireless power transfer in an innovative high performance topology; Zero Voltage Switching (ZVS) Class-D. The EPC9506 and EPC9507 amplifier (source) boards utilize the high frequency switching capability of EPC gallium nitride transistors to facilitate wireless power systems with greater than 75% efficiency.

Wireless Power Transfer

The popularity of highly resonant wireless power transfer has increased over the last few years and particularly for applications targeting portable device charging. The end applications are varied and evolving quickly from mobile device charging, to life-extending medical implementations, to safety-critical hazardous environments.

The requirements of wireless energy transfer systems include high efficiency, low profile, robustness to changing operating conditions and, in some cases, light weight. These requirements translate into designs that need to be efficient and able to operate at high switching speeds without a bulky heatsink. Furthermore the design must be able to operate over a wide range of coupling and load variations. The fast switching capability of eGaN FETs is ideal for highly resonant power transfer applications.

Amplifier Demonstration Boards (EPC9506 / EPC9507)

The EPC9506 and EPC9507 are high efficiency, A4WP compliant, Zero Voltage Switching (ZVS), Voltage Mode Class-D wireless power transfer amplifier (source) boards capable of delivering up to 35 W into a DC load while operating at up to 6.78 MHz. The boards feature the 40 V EPC2014 (EPC9506) and the 100 V EPC2007 (EPC9507) eGaN FETs. Both boards are configured to operate in either a half-bridge topology (for single-ended con¬figuration) or full-bridge topology (for differential configuration), and include the gate driver(s) and oscillator that ensure operation of the boards at a fixed frequency.

Price and Availability

EPC9506 and EPC9507 demonstration boards are priced at $418.95 each and are available for immediate delivery from Digi-Key at http://digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en

Future: EPC’s New ZVS Class-D Wireless Power Transfer System Demonstration Kits

In addition to the stand-alone amplifier (source) boards available now, EPC will be introducing shortly a family of full system demonstration kits. The full kits include the amplifier (source) board, a Class 3 A4WP compliant sour Read more

Categories: Press Releases

Efficient Power Conversion Corporation (EPC) Gallium Nitride Technology Receives EDN China 10th Anniversary Leading Technology Award

EPC enhancement-mode gallium nitride (eGaN®) power transistors recognized by leading industry trade journal as displacement technology for the venerable silicon MOSFET

EL SEGUNDO, Calif. – June, 2012 – Efficient Power Conversion Corporation (www.epc-co.com) has been recognized with a EDN China 10th Anniversary Innovation Award for Leading Technology in the Most Influential Technology for the Future category. The EDN China Innovation Award is a benchmark for recognizing technology, product, and company innovation by the voting of electronics design engineers and managers worldwide. The winners were selected through online voting (40%), expert judging (30%) and editor evaluation (30%). The ceremony was held in Shanghai on June 26th.

“It is encouraging to have our eGaN technology recognized by a leading industry magazine, especially since the honor was determined, in part, by practicing engineers worldwide. Power designers appreciate the fast switching speed, high efficiency, small size, and competitive cost of the enhancement-mode GaN transistor – attributes that will lead to continued displacement of the silicon MOSFET,” noted Alex Lidow, CEO, Efficient Power Conversion Corporation.

About EDN China and Innovation Award

EDN China Innovation Award 2014 received 128 product nominations in nine major categories from over 70 companies worldwide. EDN China started over twenty years ago as the first publication focusing on electronics designs and knowledge exchange in the country. It has more than 400,000 registered readers. For details, please visit website www.ednchina.com.

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, solar micro inverters, remote sensing technology (LiDAR), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

Sign-up to receive EPC updates via email: http://bit.ly/EPCupdates or text "EPC" to 22828
Follow EPC on Twitter at http://twitter.com/#!/EPC_CORP
Like EPC on Facebook at http://www.facebook.com/EPC.Corporation

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press Contact

Efficient Power Conversion Corporation Joe Engle, 310.986.0350 [email protected]

Read more
Categories: Press Releases
Tags: Awards

Dr. John Glaser Joins Efficient Power Conversion (EPC) as Director, Applications Engineering

Dr. Glaser will be creating benchmark power converter designs and assisting customers in the use of eGaN FETs® for high frequency, high performance power conversion systems

EL SEGUNDO, Calif.—June 2014 — Efficient Power Conversion Corporation (EPC) is proud to announce that Dr. John Glaser has joined the EPC engineering team as Director, Applications Engineering.

As a member of the EPC applications team, Dr. Glaser’s focus will be on designing lower loss and higher power density benchmark architectures and converters that demonstrate the benefits of using gallium nitride transistors. His initial focus will be on their use in high voltage applications. Dr. Glaser’s research and practical experience in these applications will be shared with customers to accelerate customer designs using high performance eGaN FETs. His designs will demonstrate GaN transistors’ superior performance over MOSFETs.

Dr. Glaser earned a doctorate in electrical engineering from the University of Arizona, where he also earned his master’s degree. His undergraduate degree is from the University of Illinois, Urbana-Champaign. Prior to joining EPC, Dr. Glaser was a senior engineer at the General Electric Global Research Center for over 16 years, where he served various technical and project leadership roles for a wide variety of power processing projects. His projects included energy efficient lighting, RF power sources, silicon carbide semiconductor applications, advanced magnetic component modeling and design, appliance controls, radar power supplies, aircraft power, failure analysis and correction. In addition, Dr. Glaser has served as an adjunct professor teaching power electronics at Rensselaer Polytechnic Institute in Troy, New York.

Dr. Glaser joins an exceptional team of application engineers who have demonstrated not only direct support of customers’ adoption of eGaN power transistors but have also contributed to the rapidly expanding bibliography of technical literature on gallium nitride technology, as evidenced by numerous technical articles and presentations, including an upcoming Wiley publication of the EPC team’s second edition of the Gallium Nitride for Efficient Power Conversion textbook.

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, solar micro inverters, remote sensing technology (LiDAR), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

Sign-up to receive EPC updates via email: http://bit.ly/EPCupdates or text "EPC" to 22828
Follow EPC on Read more

Categories: Press Releases
Tags:

Efficient Power Conversion (EPC) to Present Gallium Nitride (GaN) Technology for Benchmark Efficiency Wireless Energy Converters at 2014 PCIM Asia Conference

At PCIM Asia conference in Shanghai, China, an EPC applications expert will demonstrate the superiority of GaN transistors compared to silicon power MOSFETs in wireless energy transfer applications.

EL SEGUNDO, Calif. — June, 2014 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power transistors will be presenting an application-focused presentation at PCIM Asia highlighting the efficiency advantage of using eGaN FETs in wireless power transfer. The conference will be held in Shanghai, China from June 17th through the 19th.

In this presentation, EPC will demonstrate the ability of eGaN FETs to be employed in a class-E wireless energy transfer system that shows a 20 percentage point improvement in peak efficiency over a voltage-mode class-D version using the same coils and device load. The designs operate with loosely coupled coils in the 6.78 MHz ISM band.

The experimental example demonstrates why the superior characteristics of the eGaN FETs, such as low input and output capacitance, low package inductances, and small size, make them an ideal choice for wireless power systems. . The experimental unit was designed to deliver up to 30 W and the EPC2012 eGaN FET allows the class-E system to operate at optimum conversion efficiency. EPC will also demonstrate an even more efficient new topology that is able to operate with improved stability and reduced component counts compared with the Class E example.

“Wireless energy transfer will be one of the largest and fastest growing markets for power components over the next ten years. We believe eGaN FETs offer the lowest cost, most stable and highest efficiency solution available today,” said Alex Lidow, EPC’s co-founder and CEO.

Technical Presentation Featuring GaN FETs by EPC Expert:

"Performance Evaluation of eGaN® FETs in Low Power High Frequency Class E Wireless Energy Converter"

Date/Time: Tuesday, June 17th at 10.35 a.m. – 11.00 a.m.
Venue: Shanghai World Expo Exhibition and Convention Center
Session: Oral Session – Wide Bandgap Power Semiconductor
Presenter: Michael de Rooij, Executive Director, Application Engineering

Attendees interested in meeting with EPC applications experts during the event can send a request to [email protected].

About PCIM Asia

From latest developments of power semiconductors, passive components, products for thermal management, new materials, sensors as well as servo-technology and the wide area of power quality and energy-management - PCIM (Power Conversion Intelligent Motion) Asia offers a comprehensive, focused and compact presentation of products all under one roof. The event in China is an international meeting ground for specialists in power electronics and its applications in driver technologies and power quality. Visit PCIM Asia at http://www.mesago.de/en/PCC/For_visitors/Welcome/index.htm.

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enh Read more

Categories: Press Releases

Efficient Power Conversion (EPC) Introduces Plug and Play 97% Efficient Half-Bridge Converter DrGaNPLUS Evaluation Board Featuring Gallium Nitride Transisto

DrGaNPLUS EPC9202 100 V, 10 A board demonstrates the extreme size reduction and efficiency enhancement for power conversion achieved using high frequency switching eGaN® power transistors

EL SEGUNDO, Calif.— May 2014 — Providing an easy-to-use way for power systems designers to evaluate the exceptional performance of gallium nitride transistors, Efficient Power Conversion Corporation (EPC) introduces DrGaNPLUS evaluation boards. These boards are proof-of-concept designs that integrate all necessary components of a half-bridge circuit into a single, extremely small PCB-based module that can be readily mounted to demonstrate the excellent performance of a GaN transistor power conversion solution.

The first DrGaNPLUS board, the EPC9202, a 100 V, 10 A half-bridge power converter is a “plug and play” evaluation board that designers can use to quickly and easily evaluate the high performance gained with gallium nitride power transistors.  As an example, this board reaches 97% peak efficiency with Vin = 48 V and VOUT = 12 V, a common power conversion for telecom applications.

The EPC9202 can be driven by a single PWM input and features two EPC2001 eGaN FETs, the Texas Instrument’s LM5113 driver, and high frequency input capacitors. This DrGaNPLUS board is small, only a little over 9 mm on a side, and can mount directly onto a printed circuit board. It has been designed with an optimal layout to minimize the debilitating effects of common source and high frequency power commutation loop inductances.

Features

Benefits

  • 97% peak efficiency (VIN =48 V to VOUT = 12 V
  • Increased power density
  • All necessary components and optimal layout techniques
  • Easy evaluation for faster time to market
  • Easy mount PC board with single PWM input
  • Plug-and-Play assembly
  • High frequency eGaN FETs
  • Lower system size and cost
Read more
Categories: Press Releases

IEEE Power Electronics Society (PELS) Webinar, “GaN Transistors – Crushing Silicon in Wireless Energy Transfer”

On June 4 IEEE PELS will offer a webinar by Alex Lidow and Michael de Rooij discussing the contribution of eGaN® power transistors to increasing efficiency in wireless power transfer systems.

EL SEGUNDO, Calif.— May 2014 — Efficient Power Conversion Corporation (EPC) experts on the design and use of gallium nitride transistors will conduct a one-hour webinar sponsored by the IEEE Power Electronics Society (PELS) on June 4th from 10:30 AM to 11:30 AM (EDT).

In this webinar eGaN FETs are compared with MOSFETs in highly resonant wireless energy transfer using class-E, and a novel high efficiency voltage-mode class-D topology. Performance comparisons will be based on efficiency and sensitivity to load and coil coupling variations. Each of the topologies has been experimentally tested using the same source and device coil set with the same device rectifier. The experimental units operate with loosely coupled coils at 6.78 MHz (ISM band) and deliver between 15 W and 30 W.

The presenters, Alex Lidow, EPC CEO and co-founder, and Michael de Rooij, Executive Director of Applications Engineering, are the featured speakers. Both are widely published including being co-authors of GaN Transistors for Efficient Power Conversion, the first textbook on the design and applications of gallium nitride transistors.

Webinar Registration Information::

Title: GaN Transistors – Crushing Silicon in Wireless Energy Transfer
Date: Wednesday, June 4, 2014
Time: 10:30 AM – 11:30 AM (EDT)
Registration: http://www.ieee-pels.org/mobile-news/2442-june-4th-2014-gan-transistors-crushing-silicon-in-wireless-energy-transfer
Fee: Free of Charge

About IEEE Power Electronics Society (PELS)

The Power Electronics Society is one of the fastest growing technical societies of the Institute of Electrical and Electronics Engineers (IEEE). For over 20 years, PELS has facilitated and guided the development and innovation in power electronics technology. This technology encompasses the effective use of electronic components, the application of circuit theory and design techniques, and the development of analytical tools toward efficient conversion, control and condition of electric power. Our 7,000 members include preeminent researchers, practitioners, and distinguished award winners. IEEE PELS Publishes the IEEE Transactions on Power Electronics, a top referenced journal among all IEEE publications.

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, solar micro inverters, remote sensing technology (LiDAR), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

< Read more
Categories: Press Releases

EPC to Present Gallium Nitride (GaN) Technology for Envelope Tracking Power Supplies, High Efficiency Wireless Power Transfer and High Frequency Buck Converters at the 2014 PCIM Europe Conference

At PCIM Europe conference, EPC’s CEO and applications experts will demonstrate the superiority of GaN transistors compared to silicon power MOSFETs in a wide variety of applications.

EL SEGUNDO, Calif. — May, 2014 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs will be presenting three application-focused technical presentations at PCIM Europe. The conference will be held in Nuremberg, Germany from May 20th through the 22th.

Participants attending EPC sessions will learn about the enabling capability of eGaN FETs in 10 MHz buck converters for envelope tracking, how a novel new topology featuring eGaN FETs increases efficiency in wireless power transfer by 20%, and how an optimized parallel layout of eGaN power transistors achieves efficiencies above 96.5% in a 480 W converter.

During the conference EPC’s CEO, Alex Lidow, will participate in two industry expert panel discussions on the accelerated adoption of wide band gap semiconductors like gallium nitride in a vast array of applications.

“We are honored that the technical review committee of PCIM Europe has selected EPC experts to give technical papers focusing on GaN technology. This selection supports our belief that the superior performance of GaN technology has gained the interest and acceptance of power system design engineers around the world,” said Alex Lidow, EPC’s co-founder and CEO.

Technical Presentations Featuring GaN FETs by EPC Experts:

Attendees interested in meeting with EPC applications experts during the event can send a request to [email protected].

PCIM (Power Conversion Intelligent Motion) is Europe's leading me Read more

Categories: Press Releases

Efficient Power Conversion Corporation (EPC) Accelerates Learning Curve for Power System Design Engineers with Launch of Video Podcast Series on Gallium Nitride (GaN) Power Transistors

Produced by industry experts, EPC has posted an eleven-part educational video podcast series on the theory, design basics and applications for gallium nitride power transistors.

EL SEGUNDO, Calif. – April 2014 - Efficient Power Conversion Corporation (www.epc-co.com) has created and posted on line an eleven-part educational video podcast series designed to provide power system design engineers a technical foundation and application-focused toolset on how to design more efficient power conversion systems using gallium nitride-based transistors.

Read more
Categories: Press Releases

Efficient Power Conversion (EPC) Introduces Development Board for High Current, High Step-Down Buck Converter Applications

EPC9016 development board features 40 V, 33 A enhancement mode gallium nitride (eGaN®) FETs in parallel operation increasing current capability by 67% and optimum layout techniques maximize efficiency.

EL SEGUNDO, Calif.— April, 2014 — Efficient Power Conversion Corporation (EPC) introduces the EPC9016 half-bridge development board for high current, high step-down voltage, buck Intermediate Bus Converter (IBC) applications using eGaN FETs. In this application two low-side (synchronous rectifier) field effect transistors (FETs) are connected in parallel since they will be conducting for a much longer period compared to the single high side (control) FET.

eGaN FETs have superior current sharing capability compared to silicon MOSFETs, making them ideal for parallel operation. This development board expands upon EPC’s work on optimal layout based on ultra-low inductance packages. The optimum layout techniques used increase efficiency while reducing voltage overshoot and EMI.

The EPC9016 development board is a 40 V maximum device voltage, 33 A maximum output current, half-bridge and featuring the EPC2015 eGaN FET with an onboard LM5113 gate driver. The half-bridge configuration contains a single topside device and two parallel bottom devices and is recommended for high step-down ratio buck converter applications such as point-of-load converters and buck converters for non-isolated telecom infrastructure.

The development board is 2” x 1.5” and contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation.

A Quick Start Guide, http://epc-co.com/epc/Products/DemoBoards/EPC9016.aspx, is included with the EPC9016 development board for reference and ease of use.

EPC9016 development boards are priced at $130 each and are available for immediate delivery from Digi-Key at http://www.digikey.com/suppliers/us/efficient-power-conversion.page?&lang=en

Design Information and Support for eGaN FETs:

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converte Read more

Categories: Press Releases

Efficient Power Conversion (EPC) to Present DC-DC Converter Using eGaN® Transistors Operating at 10 MHz with 89% Peak Efficiency and the Ability to Operate in Harsh Environmental Conditions at GOMACTe

Alex Lidow, EPC CEO and co-founder, will be presenting results of a newly released family of enhancement mode (GaN®) HEMT transistors designed for high frequency operation into the 10 MHz range. The presentation will also highlight the stability of these devices under radiation exposure making them an ideal choice for high reliability applications.

EL SEGUNDO, Calif. — March, 2014 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power transistors will be presenting at the 39th Annual Government Microcircuit Applications and Critical Technology (GOMACTech) Conference which will be held in Charleston, South Carolina on April 3rd.

Enhancement-mode gallium nitride transistors have been commercially available since 2010. In that time they have enabled significant efficiency improvement in commercial DC-DC converters in a variety of topologies and at a variety of power levels. Enhancement-mode transistors have also demonstrated remarkable tolerance to gamma radiation and single event effects (SEE). Compared to radiation tolerant power MOSFETs, GaN FETs offer up to a 40 times improvement in key switching performance figures of merits. This enables designers of space-level power supplies to achieve the efficiencies of commercial state-of-the art systems.

“We are excited to have the opportunity to share the results of EPC’s latest generation of high performance eGaN power transistors and their exceptional results in radiation testing. These GaN-on-silicon power transistors, designed for multi-megahertz switching converter applications, allow the designer of radiation tolerant systems to achieve power densities and efficiencies that equal the commercial state-of-the-art,” said Alex Lidow.

About GOMACTech 2014

GOMACTech was established primarily to review developments in microcircuit applications for government systems. Established in 1968, the conference has focused on advances in systems being developed by the Department of Defense and other government agencies and has been used to announce major government microelectronics initiatives such as VHSIC and MIMIC, and provides a forum for government reviews.

About EPC

EPC is the leader in enhancement mode gallium nitride-based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, solar micro inverters, remote sensing technology (LiDAR), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

Sign-up to receive EPC updates via email: http://bit.ly/EPCupdates or text "EPC" to 22828
Follow EPC on Twitter at Read more

Categories: Press Releases

Efficient Power Conversion (EPC) Experts to Demonstrate How eGaN FETs Increase Efficiency by 20% in Wireless Power Applications at Key Power Industry Conferences in Asia

EPC experts will be making technical presentations on GaN FET technology at three industry-leading conferences in Asia – Electronica China, IIC China Power Management and Semiconductor and International Workshop on Wide Band Gap Power Electronics 2014 in Taiwan

EL SEGUNDO, Calif. — March, 2014 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power transistors will be making presentations at three industry-leading power conferences in Asia.

At two conferences in Shanghai, China on March 18th, EPC technical experts will be presenting how gallium nitride (GaN) power devices have emerged as higher efficiency replacements for the aging silicon (Si) power MOSFETs. Specifically, increases in performance offered by eGaN FETs in wireless power transfer (WiPo) applications will be presented. Examples of increased performances include a new power conversion design that delivers up to 20% improvement in efficiency and a second design delivering up to 30 W operating with loosely coupled coils in the 6.78 MHz ISM band.

On April 10, EPC’s CEO and Co-founder Dr. Alex Lidow will be giving an update on GaN technology entitled, "Crushing Silicon with GaN." This presentation will highlight key new applications, latest products on the market, latest road maps into the future, and the relative competitive position of GaN with the power MOSFET and silicon carbide.

Summary of Upcoming EPC Conferences in Asia:

  • Electronica China
    Date: March 18, 2014
    Title: "Improving Wireless Energy Transfer Performance with eGaN® FET-based Converter"
    Presenters: Dr. Michael de Rooij, Executive Director of Application Engineering
    Peter Cheng, Director of FAE for Asia
  • IIC Spring Conference, Power Management and Semiconductor
    Date: March 18, 2014
    Title: "Improving Wireless Energy Transfer Performance with eGaN® FET-based Converter"
    Presenters: Dr. Michael de Rooij, Executive Director of Application Engineering
    Peter Cheng, Director of FAE for Asia
  • International Workshop on Wide Band Gap Power Electronics 2014 (IWWPE)
    Date: April 10th
    Title: “Crushing Silicon with GaN”
    Presenter: Dr. Alex Lidow EPC CEO and Co-founder

“These three key Asian industry conferences provide EPC an opportunity to meet with practicing power system design engineers and share the attributes of GaN technology and how eGaN FETs can increase performance and efficiencies in their power system designs”, said Alex Lidow.

About Electronica China 2014

Electronica China is the leading trade platform for electronic components and systems in China and Asia Pacific. Growth of a decade has established Electronica China a name for its "high-end applications and technological innovations". A series of international innovation forums addressing important application trends and growth markets offer the electronic communities in China the latest industry trends and solutions. Visit www.epc-co.com.cn or http://www.electronicachina.com.cn/cn/forum/overview/1005.html.

About IIC China– Spring Conference 2014

IIC-China is the country’s annual systems design event where engineers, technology vendors and new ideas meet. On its 19th year, th Read more

Categories: Press Releases

Efficient Power Conversion (EPC) Introduces Development Boards With Switching Transition Speeds in the Sub-Nanosecond Range and Capable of Hard-Switching Applications Above 10 MHz

Development boards in half-bridge topology with onboard gate drives simplify evaluation of the EPC8000 family of ultra high frequency, high performance eGaN® FETs now available from EPC.

EL SEGUNDO, Calif.— March 2014 — Efficient Power Conversion Corporation (EPC) introduces a family of development boards, the EPC9022 through EPC9030, to simplify evaluation of the groundbreaking EPC8000 family of ultra high frequency eGaN power transistors.

Read more
Categories: Press Releases

Efficient Power Conversion (EPC) to Present Gallium Nitride (GaN) Technology for High Frequency Resonant and Envelope Tracking Power Supplies at the 2014 Applied Power Electronics and Exposition Confe

At the IEEE APEC 2014 power electronics industry conference, EPC applications experts will make technical presentations on GaN FET technology and applications showing the superiority of GaN transistors compared to silicon power MOSFETs.

EL SEGUNDO, Calif. — February, 2014 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs will be presenting three application-focused technical presentations at APEC 2014. Participants will learn about high frequency resonant converter, and high-frequency, hard-switched power converter design. The conference will be held in Fort Worth, Texas from March 16th through the 20th.

The Premier Event in Applied Power Electronics™, APEC, focuses on the practical and applied aspects of the power electronics business. It is the leading conference for practicing power electronics professionals addressing a broad range of topics in the use, design, manufacture and marketing of all kinds of power electronics components and equipment. For more information on APEC go to: http://www.apec-conf.org/

“We are honored that the technical review committee of APEC 2014 has selected EPC experts to give technical papers focusing on GaN technology at their annual conference. This selection supports our belief that the superior performance of GaN technology has gained the interest and acceptance of power system design engineers,” said Alex Lidow, EPC’s co-founder and CEO.

Technical Presentations Featuring GaN FETs by EPC Experts:

Attendees interested in meeting with EPC applications experts during the event can send a request to [email protected].

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as Read more

Categories: Press Releases

Efficient Power Conversion Corporation (EPC) Expands High Frequency eGaN® Power Transistor Family Capable of Amplification into the Multiple GHz Range

EPC8010 100 V gallium nitride FET is optimized for high frequency applications with positive gain into the 3 GHz range.

EL SEGUNDO, Calif. – January 2014 – Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs extends its family of high-speed, high performance transistors with the EPC8010 power transistor. Sold in die form, the EPC8010 is a mere 1.75 mm2 with 100 VDS. Optimized for high speed switching, the EPC8010 has a maximum RDS(on) of 160 milliohms and input gate charge in the hundreds of pico-coulombs.

This device has switching transition speeds in the sub nano-second range, making it uniquely capable of hard-switching applications above 10 MHz. Even beyond the 10MHz for which they were designed, this product exhibits very good small signal RF performance with high gain well into the low GHz range, making them a competitive choice for RF applications.

Applications benefiting from the low power, compact, high frequency EPC8010 include hard-switching power converters operating in the multi-megahertz range for envelope tracking, RF power amplifiers, and highly resonant wireless power transfer systems for wireless charging of mobile devices.

“The EPC8010 is an excellent addition to our family of ultra high-speed eGaN FETs. It takes EPC and gallium nitride transistor technology to a level of performance that enables applications beyond the capability of the aging MOSFET. These eGaN FETs can be used in both power switching and RF applications,” noted Alex Lidow, co-founder and CEO.

Additionally, an EPC9030 development board featuring two EPC8010 devices in a half-bridge configuration with minimum switching frequency of 500 kHz is available now. The purpose of this development board is to simplify the evaluation process of the EPC8010, providing a single board that can be easily connected into any existing converter.

Evaluation units of the EPC8010 are immediately available in 2- and 10-piece packs starting at $40 through Digi-Key Corporation at http://bit.ly/EPC8010DK

The EPC9030 development board is available now for $150 through Digi-Key Corporation at http://bit.ly/EPC9030DK

Design Information and Support for eGaN FETs:

 

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as

Read more
Categories: Press Releases

Efficient Power Conversion (EPC) Introduces High Current Development Board Featuring Multiple Half-Bridges in Parallel

EPC9013 development board features 100 V eGaN FETs with a 35 A maximum output current using four half-bridge configuration in parallel and a single onboard gate drive.

EL SEGUNDO, Calif.—February, 2014 — Efficient Power Conversion Corporation (EPC) introduces the EPC9013 development board featuring the 100 V EPC2001 enhancement mode (eGaN®) field effect transistor (FET) operating up to a 35 A maximum output current in Buck mode using a four half-bridge configuration in parallel and a single onboard gate drive. This innovative design increases output power without sacrificing efficiency.

The EPC9013 development board is 2” x 2” with eight EPC2001 eGaN FETs in conjunction with the Texas Instruments LM5113 gate driver. The development board can be operated as a Buck, Boost, or bidirectional, as well as a half bridge for motor drives and isolated converter applications. It’s parallel configuration is recommended for high current applications. The printed circuit board (PCB) layout is designed for optimal switching performance. There are various probe points to facilitate simple waveform measurement and easily evaluate the eGaN FETs.

This development board simplifies the evaluation process of the EPC2001 eGaN FET for high current operation by including all the critical components on a single board that can be simply connected into any existing converter.

A Quick Start Guide containing set up procedures, circuit diagram, performance curves and a bill of material is included with the EPC9013 demo board for reference and ease of use.

EPC9013 development boards are priced at $150 each and are available for immediate delivery from Digi-Key at http://bit.ly/EPC9013DK

Design Information and Support for eGaN FETs:

 

About EPC

EPC is the leader in enhancement mode gallium nitride-based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, solar micro inverters, Read more

Categories: Press Releases

Andrea Mirenda Joins Efficient Power Conversion (EPC) as Vice President of Sales for the Americas

Ms. Mirenda to direct EPC’s sales organization in the Americas and assist customers in adopting eGaN® FETs for high frequency, high performance power conversion systems

EL SEGUNDO, Calif.—January 2014 — Efficient Power Conversion Corporation (EPC) is proud to announce that Andrea Mirenda has joined the EPC leadership team as vice president, Americas sales. Ms. Mirenda has over 25 years of marketing and sales operation experience within the semiconductor industry. Her primary responsibilities at EPC are creating and implementing sales strategies to achieve the company’s global sales objectives.

“Andrea’s extensive experience in all aspects of marketing and sales operations within the power semiconductor industry brings valuable insight and demonstrated success to our sales organization,” said Steve Colino, vice president of marketing and sales at EPC.

Ms. Mirenda joins EPC from Vishay where most recently she was a vice president for regional marketing responsible for leading a team developing, communicating and executing global market penetration strategies in the power MOSFET division. Mirenda also spent five years with Fairchild Semiconductor as vice president of corporate marketing and global EMS sales with responsibilities for brand management, company positioning and sales management activities. Earlier in her career, Andrea held leadership positions with Hitachi Americas, as well as with Chips and Technologies.

“I am very excited to have the opportunity to work with the extremely talented EPC technical team that is leading the way in gallium nitride technology.” Commented Mirenda.

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, solar micro inverters, remote sensing technology (LiDAR), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

Sign-up to receive EPC updates via email: http://bit.ly/EPCupdates or text "EPC" to 22828
Follow EPC on Twitter at http://twitter.com/#!/EPC_CORP
Like EPC on Facebook at http://www.facebook.com/EPC.Corporation

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press Contact

Efficient Power Conversion Corporation Joe Engle, 310.986.0350 [email protected]

Read more
Categories: Press Releases

Efficient Power Conversion Corporation (EPC) Now Included in National Instruments Multisim 13.0 Enhanced SPICE Circuit Simulation and Design Software

EPC component models have been included in National Instruments’ Multisim 13.0, which is now available to thousands of engineers to improve power system efficiency, reduce final product size, reduce development cost in their power conversion system designs.

EL SEGUNDO, Calif. — December 2013 — Efficient Power Conversion Corporation, (www.epc-co.com) the leader in enhancement mode gallium nitride FET technology, announces today that its enhancement mode gallium nitride transistors (eGaN® FETs) SPICE models have been included in the latest version of National Instruments’ Multisim circuit simulation and design software. The Multisim toolkit enables engineers to easily calculate, change and sweep critical component parameters in advanced power conversion system applications.

“The EPC component models in Multisim 13.0 are now leveraged by thousands of engineers to improve power system efficiency, reduce final product size, reduce development cost, or a combination of all three. Multisim is also a leading circuit design tool in both academia and with companies that are excited about basing their power electronics designs on cutting edge components. We are delighted to have EPC’s industry-leading gallium nitride transistors included in Multisim and are looking forward to the future releases of eGaN FETs and their continued integration within Multisim,” said Mahmoud Wahby, product manager at National Instruments.

According to Alex Lidow, EPC’s co-founder and CEO, “In order to make eGaN FETs easy to use, we developed these devices to behave very much like silicon power MOSFETs, but with greatly enhanced high frequency capability. With the inclusion of our products in Multisim SPICE models, National Instruments provides user-friendly tools that make a significant impact in how easy it is to design with our eGaN devices. These device models will enable rapid time-to-market of power conversion systems taking full advantage of our high performance gallium nitride power transistors.”

A webcast highlighting the features of EPC components in the Multisim database as well as application examples where circuit simulation is vital in making accurate design decisions is available for viewing at http://www.ni.com/webcast/3263/en/

About National Instruments

Since 1976, National Instruments (www.ni.com) has equipped engineers and scientists with tools that accelerate productivity, innovation and discovery. NI’s graphical system design approach to engineering provides an integrated software and hardware platform that speeds the development of any system needing measurement and control. The company’s long-term vision and focus on improving society through its technology supports the success of its customers, employees, suppliers and shareholders.

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope trackingRead more

Categories: Press Releases

Efficient Power Conversion Corporation (EPC) Market Leading eGaN® Power Transistors Recognized as EDN Magazine Hot 100 Product for 2013

EPC8000 family of gallium nitride FETs give power systems and RF designers access to high performance GaN power transistors capable of amplification into the low GHz range, enabling innovative designs not achievable with silicon.

EL SEGUNDO, Calif. — December 2013 — Efficient Power Conversion Corporation, (www.epc-co.com) the leader in enhancement mode gallium nitride FET technology, announces today that its EPC8000 family of high frequency eGaN FETs has been recognized with inclusion in the EDN list of 100 Hot Products for 2013.

“We are very excited that EDN, an industry-leading magazine, has recognized our innovative new family of eGaN FETs. These devices take EPC and gallium nitride transistor technology to a level of performance that enables applications that were previously beyond the capability of silicon MOSFETs. The EPC8000 eGaN FETs blur the line between power and RF transistor technology,” said Alex Lidow, EPC’s co-founder and CEO.

These third generation devices have cut new ground for power transistors with switching transition speeds in the sub nano-second range. They are capable of hard switching applications even beyond the 10MHz for which they were designed. These products exhibit very good small signal RF performance with high gain well into the low GHz range, making them a competitive choice for RF applications.

Examples of applications benefiting from the low power, compact, high frequency EPC8000 family of devices include hard-switching power converters operating in the multi-megahertz range, envelope tracking in RF power amplifiers using EPC8005, highly resonant wireless power transfer systems for wireless charging of mobile devices.

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, solar micro inverters, remote sensing technology (LiDAR), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

Sign-up to receive EPC updates via email: http://bit.ly/EPCupdates or text "EPC" to 22828
Follow EPC on Twitter at http://twitter.com/#!/EPC_CORP
Like EPC on Facebook at http://www.facebook.com/EPC.Corporation

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press Contact

Efficient Power Conversion Corporation Joe Engle, 310.986.0350 [email protected]

Read more
Categories: Press Releases
RSS
First 12345678910