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Efficient Power Conversion (EPC) Introduces High Frequency Monolithic Gallium Nitride Half Bridge Enabling 12 V to 1.8 V System Efficiency Over 85% at 5 MHz at 14 A Output

Efficient Power Conversion (EPC) Introduces High Frequency Monolithic Gallium Nitride Half Bridge Enabling 12 V to 1.8 V System Efficiency Over 85% at 5 MHz at 14 A Output

EPC2111 GaN half bridge offers power systems designers a solution that increases efficiency for complete overall point-of-load system applications over 85% at 14 A when switching at 5 MHz and over 80% when switching at 10 MHz and converting from 12 V to 1.8 V.

EL SEGUNDO, Calif. — June2017 — EPC announces the EPC2111, 30 V enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN® power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated.  This increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the end user’s power conversion system. The EPC2111 is ideal for high frequency 12 V to point-of-load DC-DC conversion.

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48V-to-1V Conversion - the Rebirth of Direct-to-Chip Power

48V-to-1V Conversion - the Rebirth of Direct-to-Chip Power

During last week's PCIM Europe event in Nuremberg, Germany, direct 48V-to-1V power conversion architectures were a significant topic. “The use of GaN switches in 48V-to-1V direct dc-dc converters can improve system performance by 30%, compared with today’s best silicon-based designs,” commented Alex Lidow, CEO of Efficient Power Conversion.

PowerPulse
May 31, 2017
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This Wireless Desktop Could Foreshadow Our Future Without Cords

This Wireless Desktop Could Foreshadow Our Future Without Cords

Wireless charging promises a cord-free future, one that offers freedom from being tethered to the end of a charging cable. One company might have its finger on the pulse for this wirelessly powered future. Alexander Lidow is the CEO and founder of Efficient Power Conversion, a company looking to expand upon its namesake. EPC most notably displays how it wants to revolutionize wireless charging with a seemingly simple desktop.

Interesting Engineering
May 23, 2017
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Efficient Power Conversion (EPC) Introduces 200 V Gallium Nitride Power Transistor 12 Times Smaller Than Equivalently Rated MOSFETS

Efficient Power Conversion (EPC) Introduces 200 V Gallium Nitride Power Transistor 12 Times Smaller Than Equivalently Rated MOSFETS

EPC2046 GaN power transistor offers power systems designers a 200 V, 25 mΩ power transistor about 12 times smaller than equivalently rated silicon MOSFETs for wireless power, multi-level AC-DC power supplies, robotics, and solar micro inverters.

EL SEGUNDO, Calif. — May 2017 — EPC announces the EPC2046 power transistor for use in applications including wireless power, multi-level AC-DC power supplies, robotics, solar micro inverters, and low inductance motor drives. The EPC2046 has a voltage rating of 200 V and maximum RDS(on) of 25 mΩ with a 55 A pulsed output current.

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Categories: Press Releases

How2 Cut The Power Cord: Wireless Power Is Ready For Prime Time

How2 Cut The Power Cord: Wireless Power Is Ready For Prime Time

Wireless charging is not a new topic—it has been talked about for quite a while. Unfortunately, it has not seen widespread consumer acceptance. But, with a recently developed innovative approach to the design of transmission coils, wireless power is ready for widespread application.

How2Power
May, 2017
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GaN-on-Silicon Power Devices: How to Dislodge Silicon-Based Power MOSFETs

GaN-on-Silicon Power Devices: How to Dislodge Silicon-Based Power MOSFETs

Gallium nitride (GaN) power transistors designed for efficient power conversion have been in production for seven years. New markets, such as light detection and ranging, envelope tracking, and wireless charging, have emerged due to the superior switching speed of GaN. These markets have enabled GaN products to achieve significant volumes, low production costs, and an enviable reliability reputation. All of this provides adequate incentive for the more conservative design engineers in applications such as dc–dc converters, ac–dc converters, and automotive to start their evaluation process. So what are the remaining barriers to the conversion of the US$12 billion silicon power metal–oxide–semiconductor field-effect transistor (MOSFET) market? In a word: confidence.

Alex Lidow
March, 2017
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EPC Releases Video Series on How GaN is Changing the Way We Live

EPC Releases Video Series on How GaN is Changing the Way We Live

Produced by industry experts, Efficient Power Conversion has posted six videos showing active end-use applications such as a wireless power tabletop, high performance LiDAR, single-stage 48 V – 1.8 V DC-DC conversion, and precision motor drive control using gallium nitride transistors and integrated circuits.

EL SEGUNDO, Calif. – April 2017 – Efficient Power Conversion Corporation (www.epc-co.com) has created and posted to its website six short videos presenting end-customer applications using eGaN® FETs and ICs. These videos show how GaN technology is changing the way we live and challenging power systems design engineers to incorporate the high performance of gallium nitride FETs and ICs into their next generation power system designs.

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Categories: Press Releases

Power chips, but not as we know them

Power chips, but not as we know them

Max Smolaks welcomes gallium nitride, a new material which will replace silicon in the power chain

For the past 35 years, most power supplies have relied on power MOSFETs (metal oxide semiconductor field effect transistors) – voltage-controlled devices made of silicon that are used to switch and condition electricity.

Data Center Dynamics
April 19, 2017
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Categories: ArticlesInterviews

Podcast: Cut the Cord! - How GaN Enables the Wireless Home

Podcast: Cut the Cord! - How GaN Enables the Wireless Home

I was led to believe we were heading for a wireless world but a look behind my TV tells a very different story when I see all those wires everywhere. Not to mention the increasing number of BRIDGES for IoT devices. We were hoping to talk about the wireless powered home and how GaN (gallium nitride) is making that possible! When it comes to gallium nitride, there is only one man to speak with, and he's truly changing the world at EPC. He first appeared on EP180 talking about Why Gallium Nitride Is About To Disrupt Silicon then returned on 203 The LIDAR Technology Behind An X-Ray Pill. But he has returned to today to talk about how it can wireless charge anything, and it will blow your mind. Dr. Alex Lidow, is the CEO and co-founder of Efficient Power Conversion and he is going to talk about how tech will make power cords disappear and how EPC is leading the charge in the wireless space.

The Tech Blog Writer Podcast
April 14, 2017
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Categories: ArticlesInterviews

Efficient Power Conversion (EPC) Publishes Ninth Reliability Report Documenting Millions of GaN Technology Device Hours with Zero Failures After Rigorous Stress Testing

Efficient Power Conversion (EPC) Publishes Ninth Reliability Report Documenting Millions of GaN Technology Device Hours with Zero Failures After Rigorous Stress Testing

EPC’s Phase Nine Reliability Report documents a combined total of over 9 million GaN stress device-hours with zero failures. This report focuses on thermo-mechanical board level reliability, describing for the first time, a predictive model for solder joint integrity and showing the superior reliability of wafer level chip-scale packaging (WLCSP) GaN technology over comparable packaged devices.

EL SEGUNDO, Calif.— April 2017 — EPC announces its Phase Nine Reliability Report showing the results of a rigorous set of thermo-mechanical board level reliability testing. The Phase Nine Reliability Report adds to the growing knowledge base previously published in EPC’s first eight reports and represents an ongoing commitment to study, learn, and share information on the reliability of GaN technology.

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Categories: Press Releases

How GaN Power Transistors Drive High-Performance Lidar: Generating ultrafast pulsed power with GaN FETs

How GaN Power Transistors Drive High-Performance Lidar: Generating ultrafast pulsed power with GaN FETs

Light detection and ranging (lidar) is a versatile light-based remote sensing technology that recently has been the subject of great attention. It has shown up in a number of media venues and has even led to public debate about the engineering choices of a well-known electric car company, Tesla Motors. While this article is not going to enter the fray, it will provide some background on lidar and discuss its strong connection to power electronics technologies.

Published in: IEEE Power Electronics Magazine ( Volume: 4, Issue: 1, March 2017 )
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EPC eGaN moves closer to the ideal capabilities of the power element

EPC eGaN moves closer to the ideal capabilities of the power element

Efficient Power Conversion (EPC) has dealt another blow to the silicon MOSFET power element with its Generation 5 (Gen5) process enhancements, bringing improved performance while decreasing the cost of off-the-shelf Gallium Nitride transistors and shrinking their die size and board footprint.

Alex Lidow, EPC’s CEO/co-founder, and his team have once again put their expertise to work in their efforts to provide designers these unique power solution choices for new markets that need performance beyond what silicon devices have been able to provide. The team’s technical capabilities and in-depth understanding, even into the quantum mechanics of the process, are enabling both better performance as well as shrinking the size and cost of their solutions

EDN
March 15, 2017
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Gallium Nitride maker EPC takes a big step forward in its quest to kill silicon chips

Gallium Nitride maker EPC takes a big step forward in its quest to kill silicon chips

The $330 billion silicon chip industry is the foundation of everything electronic. But it’s slowing down as it reaches a new level of maturity that is prompting a bunch of mergers and acquisitions.

That’s why Alex Lidow, an industry pioneer and the chief proponent of an alternative material to silicon — gallium nitride (GaN) — feels like his time has come. His company, Efficient Power Conversion (EPC), is unveiling a new generation of eGaN chips that are half the size of previous chips and have significantly higher performance.

VentureBeat
March 15, 2017
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eGaN Technology from Efficient Power Conversion (EPC) Takes a Quantum Leap in Both Performance and Cost

eGaN Technology from Efficient Power Conversion (EPC) Takes a Quantum Leap in Both Performance and Cost

EPC introduces EPC2045 and EPC2047 eGaN® FETs that are half the size of prior generation eGaN transistors with significantly higher performance.

EL SEGUNDO, Calif. — March 2017 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs and ICs advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of the EPC2045 (7 mΩ, 100 V) and the EPC2047 (10 mΩ, 200 V) eGaN FETs. Applications for the EPC2045 include single stage 48 V to load Open Rack server architectures, point-of-load converters, USB-C, and LiDAR. Wireless charging, multi-level AC-DC power supplies, robotics, and solar micro inverters are example applications for the 200 V EPC2047.

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Categories: Press Releases

Efficient Power Conversion (EPC) to Showcase Life-Changing Applications Using eGaN Technology at 2017 Applied Power Electronics and Exposition Conference (APEC)

Efficient Power Conversion (EPC) to Showcase Life-Changing Applications Using eGaN Technology at 2017 Applied Power Electronics and Exposition Conference (APEC)

EPC will exhibit more than 25 demonstrations showing how GaN technology’s superior performance is changing the way we live and company experts will deliver seven technical presentations on GaN FET and IC technology at APEC® 2017, the premier global event in applied power electronics.

EL SEGUNDO, Calif. — March 2017 — The EPC team will be delivering seven technical presentations on gallium nitride (GaN) technology and applications at APEC 2017 in Tampa, Florida from March 26th through the 30th. In addition, the company will feature its latest eGaN® FETs and ICs, as well as their customers’ end products that are enabled by eGaN technology.

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Categories: Press Releases

How we devised a wirelessly powered television set

How we devised a wirelessly powered television set

Televisions can get their content wirelessly, but there is one set of wires they still need: those in their power cord. The consumer electronics industry has floated ideas for freeing TVs from their power cords, but this goal remains elusive. There are several reasons, such as the difficultly of meeting high-power requirements for large-screen TVs and the need for identifying an economical technology. Nevertheless, eGaN FETs could play a role in making TVs truly cordless devices.

Power Electronic Tips
February, 23, 2017
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GaN is Eyeing Silicon’s Data Center Lunch

GaN is Eyeing Silicon’s Data Center Lunch

As deep learning proliferates, the question of data center power density is once again on the rise, creating new business opportunities for specialized cloud services, hosted in facilities that can support north of 30 kW per rack, and companies in the power conversion space, who can tackle the density issue by making systems more energy efficient. Replacing silicon as the semiconductor material in power conversion chips with gallium nitrate, or GaN, leads to much smaller and more energy efficient devices that provide much faster switching.

Data Center Knowledge
February, 2017
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