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Efficient Power Conversion Corporation (EPC) and EE Times Taiwan Announce New Design Contest

Innovations are engineers’ intellectual properties. To promote and support engineers’ innovative designs with gallium nitride FETs, EE Times Taiwan and Efficient Conversion Corporation join hands in staging the “GaN Transistors for Efficient Power Conversion – Design Contest”. The aim is to provide an exchange platform for participating engineers to use ANY EPC’s eGaN FETs in designing: a. a DC-DC power conversion solution OR b. Class D or Class E audio solution Any participant can submit their own or their teams’ design solution in ... Read more
Categories: Press Releases

Efficient Power Conversion Corporation (EPC) Publishes Chinese Edition of Gallium Nitride (GaN) Transistor Textbook

Written by industry experts, “GaN Transistors for Efficient Power Conversion” provides both theory and applications for gallium nitride transistors EL SEGUNDO, Calif. – November 2012 - Efficient Power Conversion Corporation (www.epc-co.com) announces the publication of a Simplified Chinese edition of its gallium nitride transistor textbook, “GaN Transistors for Efficient Power Conversion”. This textbook provides power system design engineers basic technical and application-focused information on how to design more efficient power conversion systems using ... Read more
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Efficient Power Conversion Corporation (EPC) Market Leading eGaN FET Receives EDN China Innovation Leading Product Award 2012

SEGUNDO, Calif. – November, 2012 - Efficient Power Conversion Corporation (www.epc-co.com) announces that it has been recognized with a Leading Product Award by EDN China Innovation Award 2012 in its Power Device and Module category. In its eighth year, the EDN China Innovation Award 2012 is the benchmark event for recognizing product innovation by the voting of electronics design engineers and managers worldwide. “It is an honor to receive this recognition as an industry leading product from EDN China magazine. The EPC2012 is one member of our family of eGaN FETs being ... Read more
Categories: Press Releases

Efficient Power Conversion (EPC) Announces Upgrade of Development Boards Featuring Enhancement Mode Gallium Nitride (eGaN) FETs Using Dedicated GaN FET Gate Drivers from Texas Instruments

EPC9003 and EPC9006 demonstrate the ease of designing with eGaN FETs with ready-made, easy to connect development boards and well-documented engineering support materials. EL SEGUNDO, Calif.—October, 2012 — Efficient Power Conversion Corporation (EPC) today announces the availability of two development boards, the EPC9003 and the EPC9006, both featuring EPC’s enhancement-mode gallium nitride (eGaN) field effect transistors (FETs). These boards demonstrate how the recent introductions of IC gate drivers, optimized for eGaN FETs, make the task of transitioning from ... Read more
Categories: Press Releases

Efficient Power Conversion Corporation (EPC) Named to EE Times Silicon 60 List of Emerging New Technology Startups

EL SEGUNDO, Calif. – October, 2012 - Efficient Power Conversion Corporation, (www.epc-co.com) the leader in enhancement mode gallium nitride FET technology, announces today that it has been recognized with inclusion in the EE Times Silicon 60 list of 60 Emerging Startups. Companies are selected by the editorial team at EE Times based on a mix of criteria including: technology, intended market, maturity, financial position, investment profile, and executive leadership. “It is an honor to receive this recognition from EE Times as one of the hottest emerging electronics ... Read more
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Tags: Awards

Efficient Power Conversion Corporation (EPC) Market Leading eGaN FET Receives Top 10 Power Products Award from Electronic Products China

Efficient Power Conversion Corporation (EPC) Market Leading eGaN® FET Receives Top 10 Power Products Award from Electronic Products China EL SEGUNDO, Calif. – September, 2012 - Efficient Power Conversion Corporation (www.epc-co.com) announces that its EPC9102 has been recognized by Electronic Products China with a Top 10 Power Products Award – Technology Breakthrough Award. Read more
Categories: Press Releases

Efficient Power Conversion (EPC) eGaN FETs Offer Superior Safe Operating Area Capabilities

eGaN FETs exhibit a positive temperature coefficient across their entire operating range, thus overcoming a performance limitation of the silicon MOSFET.

EL SEGUNDO, Calif.—September 2012 — Efficient Power Conversion Corporation (EPC) is releasing safe operating area (SOA) data for their entire product line of eGaN FETs. The positive temperature coefficient across virtually their entire operating range allows a square SOA limited only by average device temperature.

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Categories: Press Releases

Efficient Power Conversion (EPC) Announces a WiTricity™ Demonstration System Featuring High Frequency Gallium Nitride (eGaN®) FETs

Superior switching speeds of EPC’s eGaN FETs increases the efficiency of power electronics for highly resonant wireless power transfer. EL SEGUNDO, Calif.—August 13, 2012 — Efficient Power Conversion Corporation (EPC) today announced a high efficiency wireless power demonstration system utilizing the high frequency switching capability of gallium nitride transistors. eGaN FETs from EPC are an ideal solution for these systems because of their ability to operate efficiently at high frequency, voltage, and power. Highly resonant wireless power transfer was invented by ... Read more
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Efficient Power Conversion (EPC) Introduces Eighth Brick DC-DC Power Converter Demonstration Board Featuring (eGaN®) FETs

EPC9102 showcases the performance that can be achieved using the EPC2001 eGaN FETs and the LM5113 eGaN FET driver from Texas Instruments EL SEGUNDO, Calif.—May, 2012 — Efficient Power Conversion Corporation (EPC) introduces the EPC9102, a fully functional eighth brick converter. This board is a 36 V – 60 V input to 12 V output, 375 kHz phase-shifted full bridge (PSFB) eighth brick converter with 17 A maximum output current. The EPC9102 uses the 100 V EPC2001 eGaN FETs in conjunction with the recently introduced LM5113 100V half-bridge gate driver from Texas ... Read more
Categories: Press Releases

Dr. David Reusch Joins Efficient Power Conversion (EPC) as Director Applications Engineering

Dr. Reusch will be creating benchmark power converter designs and assisting customers in the use of eGaN FETs® for high frequency, high performance power conversion systems EL SEGUNDO, Calif.—May 2012 — Efficient Power Conversion Corporation (EPC) is proud to announce that Dr. David Reusch has joined the EPC engineering team as Director, Applications Engineering. As a member of the EPC applications team, Dr. Reusch’s focus will be on designing lower loss and higher power density benchmark circuits that demonstrate the benefits of using gallium nitride ... Read more
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Efficient Power Conversion Corporation CEO Alex Lidow to speak at Credit Suisse "Future of Semiconductors" investor conference

EL SEGUNDO, Calif.—May, 2012 — Efficient Power Conversion Corporation (EPC) CEO Alex Lidow will speak at the private Credit Suisse investor conference in San Francisco on Tuesday, May 22, at 10:00 a.m. Pacific time. Dr. Lidow will discuss the growing market for gallium nitride transistors with a focus on EPC’s eGaN® FET technology and products. As a displacement technology, GaN FETs can be used in an array of current MOSFET applications in addition to enabling new high volume applications, such as wireless power and envelope tracking, a method for significant energy ... Read more
Categories: Press Releases

Efficient Power Conversion Corporation (EPC) Named to EE Times Silicon 60 List of Emerging New Technology Startups

EL SEGUNDO, Calif. – April, 2012 - Efficient Power Conversion Corporation, (www.epc-co.com) the leader in enhancement mode gallium nitride FET technology, announces today that it has been recognized with inclusion in the EE Times Silicon 60 list of 60 Emerging Startups. Companies are selected by the editorial team at EE Times based on a mix of criteria including: technology, intended market, maturity, financial position, investment profile, and executive leadership. "It is an honor to receive this recognition from EE Times as one of the hottest emerging electronics companies ... Read more
Categories: Press Releases

New gate driver extends TI's family of GaN FET driver ICs

Texas Instruments Incorporated (TI) introduced a low-side gate driver for use with MOSFETs and Gallium-Nitride (GaN) power field-effect transistors (FETs) in high-density power converters. The new LM5114 drives GaN FETs and MOSFETs in low-side applications, such as synchronous rectifiers and power factor converters. Together with the LM5113, the industry's first 100-V half-bridge GaN FET driver announced in 2011, the family provides a complete isolated DC/DC conversion driver solution for high-power GaN FETs and MOSFETs used in high-performance telecom, networking and data center ... Read more
Categories: Press Releases

Efficient Power Conversion Corporation (EPC) Publishes Industry’s First Application-focused Gallium Nitride (GaN) Transistors Textbook

Written by industry experts, "GaN Transistors for Efficient Power Conversion" provides both theory and applications for gallium nitride transistors EL SEGUNDO, Calif. - January 2012 - Efficient Power Conversion Corporation (www.epc-co.com) announces the publication of a textbook designed to provide power system design engineers basic technical and application-focused information on how to design more efficient power conversion systems using gallium nitride-based transistors. "This book will help designers to understand the exceptional benefits of GaN technology and the ... Read more
Categories: Press Releases

The National LM5113 from Texas Instruments has been honored with an Electronic Products’ Product of the Year award

EL SEGUNDO, Calif-January 3, 2012 — The National LM5113 from Texas Instruments has been honored with an Electronic Products’ Product of the Year award. The editors of Electronic Products — a leading trade publication for electronic design engineers — evaluated thousands of products launched in 2011. The winning products were selected on the basis of innovative design, significant advancement in technology or application and substantial achievement in price and performance. The LM5113 is the industry’s first driver designed specifically for enhancement mode ... Read more
Categories: Press Releases

Efficient Power Conversion Corporation (EPC) Market Leading eGaN® FET Receives EDN China Innovation Leading Product Award

EL SEGUNDO, Calif. – December, 2011 - Efficient Power Conversion Corporation (www.epc-co.com) announces today that it has been recognized with a Leading Product Award by EDN China Innovation Award 2011 in its Power Device and Module category. In its seventh year, the EDN China Innovation Award 2011 is the benchmark event for recognizing product innovation by China’s electronics design engineers and managers. “It is an honor to receive this recognition as an industry leading product from EDN China. The EPC2010 is one member of our family of eGaN FETs being adopted by ... Read more
Categories: Press Releases

Efficient Power Conversion (EPC) Introduces Buck Power Conversion Demonstration Board Featuring (eGaN®) FETs

EPC9101 demonstrates size reduction and efficiency enhancement for buck power conversion achieved using high frequency switching eGaN power transistors EL SEGUNDO, Calif.—October 2011 — Efficient Power Conversion Corporation (EPC) introduces the EPC9101, a fully functional buck power conversion demonstration circuit. This board is an 8 V-19 V input to 1.2 V, 18 A maximum output current, 1MHz buck converter. It uses the EPC2014 and EPC2015 eGaN FETs in conjunction with the recently introduced National LM5113 100V half-bridge gate driver from Texas Instruments. The LM5113 is ... Read more
Categories: Press Releases

Efficient Power Conversion Corporation (EPC) Achieves ISO 9001:2008 Certification for Quality Management

EPC has received ISO certification for the design, development, marketing and sales of gallium nitride power transistors and power management devices EL SEGUNDO, Calif. – September 2011 - Efficient Power Conversion Corporation (www.epc-co.com) the leader in energy-efficient enhancement mode gallium nitride (eGaN®) power transistors used in power conversion applications, has received the International Organization for Standardization ISO 9001:2008 certification for its quality management system. The ISO standards are published by the International Organization for ... Read more
Categories: Press Releases

Efficient Power Conversion (EPC) Introduces EPC9006 Development Board Featuring Enhancement Mode Gallium Nitride (eGaN®) FETs

EPC9006 facilitates rapid design of high frequency switching power conversion systems based on the 100 V EPC2007 with a ready-made and easy-to-connect development board including well-documented engineering support materials. EL SEGUNDO, Calif.—September, 2011 — Efficient Power Conversion Corporation (EPC) introduces the EPC9006 development board to make it easier for engineers to start designing with a 100 V enhancement-mode gallium nitride (eGaN) field effect transistor (FET) in applications such as high-speed DC-DC power supplies, point-of-load converters, class D audio ... Read more
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