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Efficient Power Conversion Corporation (EPC) Market-leading Development Board Featuring eGaN® FETs Receives Industry Awards in China

Award winning EPC9005 development board facilitates rapid design of high frequency switching power conversion systems based on the 40 V EPC2014 eGaN FET

EL SEGUNDO, Calif. – November 2013 - Efficient Power Conversion Corporation (www.epc-co.com; www.epc-co.com.cn) announces that its EPC9005 development board has been recognized with two industry awards in China; namely, Optimized Development Award of the Top 10 Power Products Award 2013 presented by Electronics Product China and Leading Product Award of China Innovation Award 2013 presented by EDN China magazine.

“It is an honor to receive these recognitions as an industry leading product from Electronics Product China and EDN China magazine”, noted Alex Lidow, CEO, Efficient Power Conversion Corporation. “Our EPC9005 board facilitates rapid design of high frequency switching power conversion systems based on our 40 V EPC2014 eGaN FET. The EPC9005 is a ready-made and easy-to-connect development board complete with well-documented engineering support materials.”

The EPC9005 measures 2” x 1.5” and contains two EPC2014 eGaN FET in a half-bridge configuration using Texas Instruments LM5113 gate driver, supply and bypass capacitors. The board contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation.

For details, please visit our website with the below information:

About Electronics Product China

Electronic Products China, a leading electronics industry magazine, judges products on achievement of a significant technological advancement, an innovative design, or a substantial enhancement in price/performance. A presentation ceremony for the winners of this year’s awards took place on September 12, 2013 in Beijing during the magazine’s Power Conference.

About EDN China’s Innovation Award

EDN’s annual Innovation Awards started in the United States 23 years ago to recognize achievements in the design of ICs and related products. Today, it has developed to become one of the most prestigious awards for electronics design engineering in North America. Introduced to China in 2005 as the EDN China Innovation Awards, it has steadily grown to become one of the mainland China’s most anticipated and respected accolades for the electronics design industry, with winning products gaining wide recognition in the local market.

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as servers, wireless power tra Read more

Categories: Press Releases

Professional Quality Sound with 96% Power Efficiency – EPC Demonstration Board Featuring eGaN® FETs Delivers High Quality Audio Performance in Space Saving Design

EPC9106 Class D audio amplifier reference design, using high frequency switching gallium nitride power transistors, demonstrates efficiency enhancement, size reduction and eliminates need for a heat sink while delivering prosumer quality sound.

EL SEGUNDO, Calif. — November 2013 — Efficient Power Conversion Corporation (EPC) introduces the EPC9106, a reference design for a 150 W, 8 Ω Class D audio amplifier. This demonstration board uses a Bridge-Tied-Load (BTL) design, composed of four ground-referenced half-bridge output stages, which allows scalability and expandability of the design. All elements that can impact the sonic performance of Class D Audio systems are minimized or eliminated in an eGaN FET-based system.

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Categories: Press Releases

Efficient Power Conversion (EPC) Introduces Family of Commercial High-Lead Enhancement Mode Gallium Nitride (eGaN®) FETs

Commercial high-lead versions of EPC’s popular enhancement mode gallium nitride (eGaN) FETs, the EPC2801, EPC2815, and EPC2818, are now available.

EL SEGUNDO, Calif. — October 2013 — (www.epc-co.com) Efficient Power Conversion Corporation (EPC) introduces devices with a high-lead solder termination ideal for applications requiring higher temperature solder. The EPC2801, EPC2815, and EPC2818 feature high-lead content (95% lead, 5% tin) solder terminations.

The EPC2801 is a 100 VDS device with a maximum RDS(ON) of 7 milliohms with 5 V applied to the gate. The EPC2815 is a 40 VDS with a maximum RDS(ON) of 4 milliohms. The EPC2818 is 150 VDS device with a maximum RDS(ON) of 25 milliohms.

Table 1 – Summary of Specification Ratings

In 1k piece quantities, the EPC2801 is priced at $7.51, the EPC2815 is priced at $6.35, and the EPC2818 is priced at $16.25. All products are immediately available through Digi-Key Corporation at http://www.digikey.com/Suppliers/us/Efficient-Power-Conversion

Design Information and Support for eGaN FETs:

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, solar micro inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. Visit our web site: www.epc-co.com.

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Categories: Press Releases

Efficient Power Conversion (EPC) Introduces Development Board Showcasing 100 V Enhancement Mode Gallium Nitride (eGaN®) FETs in Parallel for High Current Applications

EPC9017 development board features eGaN FETs in parallel operation using optimum layout techniques to increase current capability and efficiency.

EL SEGUNDO, Calif.— October, 2013 — Efficient Power Conversion Corporation (EPC) introduces the EPC9017 half bridge development board for high current, high step down voltage, buck Intermediate Bus Converter (IBC) applications using eGaN FETs. In this application two low side (synchronous rectifier) FETs are connected in parallel since they will be conducting for a much longer period compared to the single high side (Control) FET. eGaN FETs have superior current sharing capability compared to silicon MOSFETs, making them more attractive for parallel operation. This development board expands upon EPC’s work on optimal layout based on ultra-low inductance packages.

The EPC9017 development board is a 100 V maximum device voltage, 20 A maximum output current, half bridge with onboard gate drives, featuring the EPC2001 enhancement mode (eGaN) field effect transistor (FET). The half bridge configuration contains a single top side device and two parallel bottom devices and is recommended for high current, lower duty cycle applications.

The development board is 2” x 1.5” and contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation.

A Quick Start Guide, http://epc-co.com/epc/documents/guides/EPC9017_qsg.pdf, is included with the EPC9017 development board for reference and ease of use.

EPC9017 development boards are priced at $130 each and are available for immediate delivery from Digi-Key at http://www.digikey.com/Suppliers/us/Efficient-Power-Conversion

Design Information and Support for eGaN FETs:

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF Read more

Categories: Press Releases

Efficient Power Conversion (EPC) Blurs the Line Between Power and RF Transistors with Family of Gallium Nitride Transistors Capable of Amplification into the Multiple GHz Range

Power systems and RF designers now have access to high performance GaN power transistors capable of amplification into the low GHz range, enabling innovative designs not achievable with silicon.

EL SEGUNDO, Calif. — September 2013 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs extends its family of high-speed, high performance transistors with the EPC8000 family of products.

Cutting new ground for power transistors, these third generation devices have switching transition speeds in the sub nano-second range, making them capable of hard switching applications above 10 MHz. Even beyond the 10MHz for which they were designed, these products exhibit very good small signal RF performance with high gain well into the low GHz range, making them a competitive choice for RF applications.

“We are very excited about how our innovative new family of eGaN FETs will change the industry. These products take EPC and gallium nitride transistor technology to a level of performance that enables applications that were previously beyond the capability of MOSFETs. We now have eGaN FETs that can be used in both power semiconductor and RF applications,” said Alex Lidow, EPC’s co-founder and CEO.

Products in the family are available with on-resistance values from 125 mΩ through 530 mΩ, and three blocking voltage capabilities, 40 V, 65 V and 100 V. These new transistors have several new features that further enable designers to take full advantage of the high performance gallium nitride FETs have to offer. These features include reduction in QGD thereby reducing voltage transient switching losses, improved Miller ratio providing high dv/dt immunity, low inductance pads for improved connection to both gate and drain circuits, orthogonal current flow between the gate and drain circuits for enhanced CSI reduction, and a separate gate return connection also for enhanced CSI reduction.

Examples of applications benefiting from the low power, compact, high frequency EPC8000 family of devices include hard-switching power converters operating in the multi-megahertz range, envelope tracking in RF power amplifiers, highly resonant wireless power transfer systems for wireless charging of mobile devices.

The EPC9027 development board, featuring the EPC8007 devices and the LM5113 gate driver IC in a half bridge configuration, is available now. Additional development boards will be available to support designers in evaluating and incorporating other EPC8000 family products into their power conversion systems.

EPC8000 Family Product Specifications:

 

Evaluation units of the EPC8000 family of products are immediately available in 10-piece packs starting at $430 through Digi-Key Corporation at http://www.digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en

Design Information and Support for eGaN FETs:

Categories: Press Releases

Efficient Power Conversion Corporation (EPC) Expands eGaN FET Family with 150 Volt Power Transistor

EPC2018 gallium nitride power transistor delivers high frequency switching for exceptional performance in DC-DC power conversion and Class D Audio applications.

EL SEGUNDO, Calif. – September 2013 – Efficient Power Conversion Corporation (www.epc-co.com) introduces the EPC2018 as the newest member of EPC’s family of enhancement mode gallium nitride power transistors.

The EPC2018 is a 5.76 mm2, 150 VDS, 12 A device with a maximum RDS(on) of 25 milliohms with 5 V applied to the gate. This GaN power transistor delivers high performance due to its ultra high switching frequency, extremely low RDS(on), exceptionally low QG and in a very small package.

Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2018 is much smaller and has many times superior switching performance. Applications that benefit from eGaN FET performance include high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, as well as many other circuits needing nanosecond switching speeds.

“The EPC2018 is an excellent complement to our existing family of eGaN FETs. The low on resistance, low output capacitance, fast switching, and no reverse recovery reduce the switching losses in power conversion applications and allow for higher efficiency and improved sound quality in Class D audio applications,” noted Alex Lidow, co-founder and CEO.

In 1k piece quantities, the EPC2018 is priced at $6.54 and is immediately available through Digi-Key Corporation

Design Information and Support for eGaN FETs:

Table 1 – Summary of EPC2018 Specification Ratings

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, solar micro inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. Visit our web site: www.epc-co.com.

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Categories: Press Releases

Efficient Power Conversion Corporation (EPC) Expands eGaN® FET Family with 100 Volt, 16 milliohm Power Transistor

EPC2016 gallium nitride power transistor delivers high frequency switching for exceptional performance in DC-DC power conversion.

EL SEGUNDO, Calif. – September, 2013- Efficient Power Conversion Corporation (www.epc-co.com) introduces the EPC2016 as the newest member of EPC’s family of enhancement mode gallium nitride power transistors.

The EPC2016 is a 3.36 mm2, 100 VDS, 11 A device with a maximum RDS(on) of 16 milliohms with 5 V applied to the gate. This GaN power transistor delivers high performance due to its ultra high switching frequency, extremely low RDS(on), exceptionally low QG and in a very small package.

Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2016 is much smaller and has many times superior switching performance. Applications that benefit from eGaN FET performance include high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, and high frequency circuits.

“The EPC2016 is an excellent complement to our existing family of eGaN FETs. The lower gate charge and output capacitances significantly reduce the switching losses in power conversion applications,” noted Alex Lidow, co-founder and CEO.

Additionally, the EPC9010 development board, featuring the EPC2016 devices and the LM5113 gate driver IC in a half bridge configuration, is available now. Development boards support designers in evaluating and incorporating eGaN FETs into their power conversion systems.

In 1k piece quantities, the EPC2016 is priced at $1.61 and is immediately available through Digi-Key Corporation

Design Information and Support for eGaN FETs:

Design Information and Support for eGaN FETs:

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, solar micro inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. Visit our web site: www.epc-co.com.

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Categories: Press Releases

Efficient Power Conversion (EPC) to Present Gallium Nitride (GaN) Technology and Applications at the 2013 Darnell’s Energy Summit

EPC CEO and applications experts will conduct a half-day seminar and technical presentations including an invited plenary session presentation on GaN FET technology and applications.

EL SEGUNDO, Calif. — August, 2013 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs will be presenting an educational seminar and several application-focused technical presentations at Darnell’s Energy Summit 2013. The conference will be held in Dallas, Texas from September 9th through the 12th.

This summit combines efficient power conversion, green building design and smart grid electronics into a single conference. The presentations will focus on advanced power conversion technologies needed for the successful development of next-generation power systems. It is a solutions-oriented event, with a strong emphasis on practical advances in power electronics and energy efficiency.

“It is noteworthy that the Darnell Energy Summit has selected EPC experts to conduct an educational seminar and to give technical papers focusing on GaN technology at their conference. This selection continues to demonstrate the superior performance of GaN technology has gained the interest and acceptance of those interested in improving energy efficiency,” said Alex Lidow, EPC’s co-founder and CEO.

Educational Seminar: GaN Transistors for Efficient Power Conversion
Presenter: Alex Lidow and David Reusch
Monday, September 9th (9:00 a.m. – 12:30 p.m.)

Expanding on the GaN FET technology textbook written by EPC, this seminar will explain how GaN High Electron Mobility Transistors (HEMT) work. This session will also discuss how to use these devices including showing the drivers, layout, and thermal considerations for high performance and high frequency power conversion. To showcase the real-world value of GaN technology, several applications including efficient DC-DC conversion, high frequency envelope tracking, and wireless power transfer will be presented. The seminar will conclude with a look at future of this emerging displacement technology.

Technical Presentations by EPC Experts Featuring GaN FETs:

• Plenary Session 
“GaN: Crushing Silicon One Application at a Time”
Presenter: Alex Lidow
​Tuesday, September 10th (Session 2.1, 1:45 p.m.)

• Technical Sessions 
“eGaN®FETs for High Frequency Hard-Switching Converters”
Presenters: Read more

Categories: Press Releases

Efficient Power Conversion (EPC) Introduces 96% Efficient, 1 MHz Buck Converter Demonstration Board Featuring eGaN FETs

EPC9107 demonstrates size reduction and efficiency enhancement for power conversion achieved using high frequency switching eGaN power transistors

EL SEGUNDO, Calif.—June, 2013 — Efficient Power Conversion Corporation (EPC) introduces the EPC9107, a fully functional buck power conversion demonstration circuit.  This board is a 9 V-28 V input to 3.3 V, 15 A maximum output current, 1MHz buck converter.  It uses the EPC2015< eGaN FET in conjunction with the LM5113 100V half-bridge gate driver from Texas Instruments. The EPC9107 demonstrates the reduced size and performance capabilities of high switching frequency eGaN FETs when coupled with this dedicated eGaN driver.

The EPC9107 demonstration board is 3” square and contains a fully closed-loop buck converter with optimized control loop. The complete power stage including eGaN FETs, driver, inductor and input/output caps is in an ultra compact 0.5” x 0.5” layout to showcase the performance that can be achieved using the eGaN FETs with the LM5113 eGaN driver.

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Categories: Press Releases

Efficient Power Conversion (EPC) CEO to Author Gallium Nitride Technology Monthly Column on eeWeb.com

Alex Lidow to author a monthly column in eeWeb.com entitled “How to GaN,” addressing a range of technical issues related to gallium nitride (GaN) technology including its application in power conversion and management.

EL SEGUNDO, Calif.—June 2013— Efficient Power Conversion Corporation proudly announces that beginning in June, Alex Lidow, EPC co-founder and CEO, will author a monthly column on the online website eeWeb.com, a leading website for electrical engineers.

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Categories: Press Releases

Efficient Power Conversion (EPC) Opens GaN Power Library

Designers using state-of-the-art GaN transistors for power conversion can for the first time go to one place to find a concentration of articles, videos, and textbooks that reduce the time it takes to get their products to market.

EL SEGUNDO, Calif.—May 2013— Efficient Power Conversion Corporation (EPC) announces the redesign of the EPC website, epc-co.com, to include a gallium nitride transistor library. The redesign provides search and access to a trove of GaN transistor technology educational materials and product information. Directly from the home page, power design engineers have immediate access to a wealth of articles, videos and textbooks. These materials will accelerate understanding and use of this new, rapidly emerging technology.

According to Dr. Alex Lidow, co-founder and CEO, “All new technologies have a learning curve that engineers must climb prior to implementing a new technology effectively and efficiently. At EPC we recognize our responsibility to the design community to make certain that engineers know the benefits and understand the intricacies of working with gallium nitride technology. We have taken this education responsibility seriously and have generated and collected a vast amount of materials on GaN transistor technology and applications. Now these materials are concentrated in a single location. Engineers wanting to learn about GaN transistors simply can go to epc-co.com.”

EPC’s design and applications team are leading experts in the field of GaN transistor technology and their applications. Since the founding of EPC in 2007, this team has published over 50 articles in professional journals, delivered more than 30 presentations at industry and academic conferences, and published the only textbook available on the subject, “GaN Transistors for Efficient Power Conversion.” For the first time, gallium nitride transistor educational materials are easily retrievable from one location – the EPC GaN Library -- at epc-co.com.

Visit epc-co.com and enter the world of gallium nitride transistors; learn the fundamental attributes and applications of GaN technology that give it the power to displace the venerable, but ageing, MOSFET.

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN®) FETs as power MOSFET replacements in applications such as servers, wireless power transmission, envelope tracking, RF transmission, power-over-ethernet (PoE), solar micro inverters, energy efficient lighting, and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

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Categories: Press Releases

Efficient Power Conversion (EPC) Announces Upgrade of Development Board Featuring Enhancement Mode Gallium Nitride (eGaN) FETs Using Dedicated GaN FET Gate Driver from Texas Instruments

EPC9005 demonstrates the ease of designing with eGaN FETs with ready-made, easy to connect development boards and well-documented engineering support materials.

EL SEGUNDO, Calif.—April 2013— Efficient Power Conversion Corporation (EPC) today announces the availability of the EPC9005 development board, featuring EPC’s enhancement-mode gallium nitride (eGaN) field effect transistors (FETs). This board demonstrates how IC gate drivers, optimized for eGaN FETs, make the task of transitioning from silicon to eGaN technology simple and cost effective.

The EPC9005 development board is a half bridge configuration containing two 40 V EPC2014 eGaN FETs with a 7 A maximum output current using a gate driver optimized for GaN devices, the LM5113 from Texas Instruments. The LM5113 used on this board is packaged in a 2x2 BGA package allowing for a very compact power stage with the driver and two eGaN FETs. The EPC2014 is designed for use in applications such as high-speed DC-DC power supplies, point-of-load converters, wireless charging, and high frequency circuits.

The EPC9005 simplifies the evaluation process of eGaN FETs by including all the critical components on single 2” x 1.5” boards that can be easily connected into any existing converter. In addition, there are various probe points on the board to facilitate simple waveform measurement and efficiency calculation. A Quick Start Guide is included with the development board for reference and ease of use.

EPC9005 is priced at $99.18 and, like all EPC products, is available for immediate delivery from Digi-Key at http://digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en

Design Information and Support for eGaN FETs:

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as servers, wireless power transmission, envelope tracking, RF transmission, power-over Read more

Categories: Press Releases

Efficient Power Conversion (EPC) Introduces Development Board Featuring 100 V Enhancement Mode Gallium Nitride (eGaN) FETs

EPC9010 development board features dedicated eGaN driver to facilitate rapid design of high frequency switching power conversion systems using the 100 V EPC2016 eGaN FET

EL SEGUNDO, Calif.— February, 2012 — Efficient Power Conversion Corporation (EPC) introduces the EPC9010 development board to make it easier for engineers to start designing with a 100 V enhancement-mode gallium nitride (eGaN) field effect transistor (FET) in applications such as high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high frequency circuits.

The EPC9010 development board is a 100 V maximum device voltage, 7 A maximum output current, half bridge with onboard gate drives, featuring the EPC2016 enhancement mode (eGaN) field effect transistor (FET). The purpose of this development board is to simplify the evaluation process of eGaN FETs by including all the critical components on a single board that can be easily connected into any existing converter.

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Categories: Press Releases

EPC named a Constant Contact 2012 All Star

EPC is honored to be recognized as a 2012 All Star by Constant Contact. This status is an annual designation that only 10% of Constant Contact customers achieve. It is awarded to companies making extra efforts to engage customers. We would like to thank all who have supported us. If you are not already receiving our newsletter please join our list @ http://bit.ly/qr28tu

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Efficient Power Conversion (EPC) to Present Gallium Nitride (GaN) Technology and Applications at the 2013 Applied Power Electronics And Exposition Conference (APEC®)

EPC CEO and applications experts will conduct a half-day seminar and technical presentations on GaN FET technology and applications at the IEEE APEC 2013 power electronics industry conference.

EL SEGUNDO, Calif. — February, 2013 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs will be presenting an educational seminar and several application-focused technical presentations at APEC 2013. The conference will be held in Long Beach, California from March 17th through the 21st.

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Categories: Press Releases

Efficient Power Conversion Development Board Demonstrates Ease of Designing Power Systems with 200 V eGaN FETs

EPC9004 features eGaN® FETs in combination with dedicated GaN FET gate driver from Texas Instruments

EL SEGUNDO, Calif.—February 2013 — Efficient Power Conversion Corporation (EPC) today announced the availability of the EPC9004 development board, featuring EPC’s enhancement-mode gallium nitride (eGaN) field effect transistors (FETs). This board demonstrates how recently introduced IC gate drivers, optimized for GaN FETs, make the task of transitioning from silicon power transistors to higher performance eGaN FETs simple and cost effective.

The EPC9004 development board is a 200 V peak voltage, 2 A maximum output current, half bridge featuring the EPC2012 eGaN FET. The EPC2012 is used in combination with the UCC27611 high-speed gate driver from Texas Instruments, thus reducing time and complexity for designing high frequency, high performance power systems.

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Categories: Press Releases

EPC Wireless Power Transfer Demonstration System named a Top 10 Wireless Charging Development for 2012 by PowerPulse.Net

Wireless charging will be a fast-growing segment of the power electronics industry in 2013. Significant developments began accelerating last year. The “Top 10” developments selected by the PowerPulse editors highlight important trends in wireless charging that will continue in 2013 and beyond.

EPC announced a high efficiency wireless power demonstration system utilizing the high frequency switching capability of gallium nitride transistors. eGaN® FETs from EPC are well suited for these systems because of their ability to operate efficiently at high frequency, voltage, and power. This wireless power demonstration system jointly developed by EPC and WiTricity is a class-D power system operating at 6.78 MHz, and capable of delivering up to 15 W to a load. The purpose of this demonstration system is to simplify the evaluation process of the wireless power technology. The system includes all the critical components in a single system that can be easily connected to demonstrate the powering of a device with wireless energy transfer.

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Categories: Press Releases

Efficient Power Conversion Corporation (EPC) and EE Times Taiwan Announce New Design Contest

Innovations are engineers’ intellectual properties. To promote and support engineers’ innovative designs with gallium nitride FETs, EE Times Taiwan and Efficient Conversion Corporation join hands in staging the “GaN Transistors for Efficient Power Conversion – Design Contest”.

The aim is to provide an exchange platform for participating engineers to use ANY EPC’s eGaN FETs in designing:

  • a. a DC-DC power conversion solution OR
  • b. Class D or Class E audio solution

Any participant can submit their own or their teams’ design solution in writing in either Chinese or English.

An expert panel of judges will judge and decide the Top 3 Winners who will be awarded with EE Times Taiwan Certificate and Efficient Power Conversion Corporation’s EPC9102 development board for each winner / winning team.

How to Submit:

  1. Download an application form from EE Times Taiwan (download form)
  2. Fill in all required information and submit through email to [email protected] Please mark the email title with the application form attachment: GaN Transistors for Efficient Power Conversion Design Contest
  3. Full design rules and contest procedure can be found at http://bit.ly/eGaN_DesignContest.

The contest submission period is from December 7, 2012 to January 18, 2013 (before 11:59pm)

Judging Guidelines

  1. Expert Judgment Panel will select from design solutions submitted Top 3 Winning Engineer /Engineering Teams according to the criteria of 1) Innovativeness; 2) Creativity; and 3) Commerical Viability.
  2. EE Times Taiwan will report this activity throughout on its website.

Results Announcement Date

Results Announcement will be held on February 4, 2013 through EE Times Taiwan Online announcement.

Awards

Top 3 Winners who will be awarded with EE Times Taiwan Certificate and Efficient Power Conversion Corporation’s EPC9102 development board for each winner / winning team. The winning solution will be reported online with exposure to engineering communities as well as corporations worldwide.

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Categories: Press Releases

Efficient Power Conversion Corporation (EPC) Publishes Chinese Edition of Gallium Nitride (GaN) Transistor Textbook

Written by industry experts, “GaN Transistors for Efficient Power Conversion” provides both theory and applications for gallium nitride transistors

EL SEGUNDO, Calif. – November 2012 - Efficient Power Conversion Corporation (www.epc-co.com) announces the publication of a Simplified Chinese edition of its gallium nitride transistor textbook, “GaN Transistors for Efficient Power Conversion”. This textbook provides power system design engineers basic technical and application-focused information on how to design more efficient power conversion systems using gallium nitride-based transistors.

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Efficient Power Conversion Corporation (EPC) Market Leading eGaN FET Receives EDN China Innovation Leading Product Award 2012

SEGUNDO, Calif. – November, 2012 - Efficient Power Conversion Corporation (www.epc-co.com) announces that it has been recognized with a Leading Product Award by EDN China Innovation Award 2012 in its Power Device and Module category. In its eighth year, the EDN China Innovation Award 2012 is the benchmark event for recognizing product innovation by the voting of electronics design engineers and managers worldwide.

“It is an honor to receive this recognition as an industry leading product from EDN China magazine. The EPC2012 is one member of our family of eGaN FETs being adopted by customers as higher performance replacements for silicon-based MOSFETs,” noted Alex Lidow, CEO, Efficient Power Conversion Corporation.

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