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Efficient Power Conversion (EPC) Announces Upgrade of Development Boards Featuring Enhancement Mode Gallium Nitride (eGaN) FETs Using Dedicated GaN FET Gate Drivers from Texas Instruments

EPC9003 and EPC9006 demonstrate the ease of designing with eGaN FETs with ready-made, easy to connect development boards and well-documented engineering support materials.

EL SEGUNDO, Calif.—October, 2012 — Efficient Power Conversion Corporation (EPC) today announces the availability of two development boards, the EPC9003 and the EPC9006, both featuring EPC’s enhancement-mode gallium nitride (eGaN) field effect transistors (FETs). These boards demonstrate how the recent introductions of IC gate drivers, optimized for eGaN FETs, make the task of transitioning from silicon to eGaN technology simple and cost effective.

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Categories: Press Releases

Efficient Power Conversion Corporation (EPC) Named to EE Times Silicon 60 List of Emerging New Technology Startups

EL SEGUNDO, Calif. – October, 2012 - Efficient Power Conversion Corporation, (www.epc-co.com) the leader in enhancement mode gallium nitride FET technology, announces today that it has been recognized with inclusion in the EE Times Silicon 60 list of 60 Emerging Startups. Companies are selected by the editorial team at EE Times based on a mix of criteria including: technology, intended market, maturity, financial position, investment profile, and executive leadership.

“It is an honor to receive this recognition from EE Times as one of the hottest emerging electronics companies and as EE Times has noted, ‘an emerging company worthy of tracking,’” commented Alex Lidow, CEO, Efficient Power Conversion Corporation.

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Categories: Press Releases
Tags: Awards

Efficient Power Conversion Corporation (EPC) Market Leading eGaN FET Receives Top 10 Power Products Award from Electronic Products China

Efficient Power Conversion Corporation (EPC) Market Leading eGaN® FET Receives Top 10 Power Products Award from Electronic Products China

EL SEGUNDO, Calif. – September, 2012 - Efficient Power Conversion Corporation (www.epc-co.com) announces that its EPC9102 has been recognized by Electronic Products China with a Top 10 Power Products Award – Technology Breakthrough Award.

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Categories: Press Releases

Efficient Power Conversion (EPC) eGaN FETs Offer Superior Safe Operating Area Capabilities

eGaN FETs exhibit a positive temperature coefficient across their entire operating range, thus overcoming a performance limitation of the silicon MOSFET.

EL SEGUNDO, Calif.—September 2012 — Efficient Power Conversion Corporation (EPC) is releasing safe operating area (SOA) data for their entire product line of eGaN FETs. The positive temperature coefficient across virtually their entire operating range allows a square SOA limited only by average device temperature.

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Categories: Press Releases

Efficient Power Conversion (EPC) Announces a WiTricity™ Demonstration System Featuring High Frequency Gallium Nitride (eGaN®) FETs

Superior switching speeds of EPC’s eGaN FETs increases the efficiency of power electronics for highly resonant wireless power transfer.

EL SEGUNDO, Calif.—August 13, 2012 — Efficient Power Conversion Corporation (EPC) today announced a high efficiency wireless power demonstration system utilizing the high frequency switching capability of gallium nitride transistors. eGaN FETs from EPC are an ideal solution for these systems because of their ability to operate efficiently at high frequency, voltage, and power.

Highly resonant wireless power transfer was invented by the founders of WiTricity, and WiTricity licenses its intellectual property to companies seeking to build products based on this exciting new technology. Capable of transferring power over distance, WiTricity technology enables a wide range of consumer, medical, industrial and automotive applications. Products using highly resonant wireless power transfer can meet stringent regulatory guidelines, and is safe for people and animals.

Many wireless charging products now in the market use traditional magnetic induction coils with operating frequencies between 100-300 kHz, and Class E, F and S amplifier converter topologies Recently, organizations such as the Consumer Electronics Association and A4WP (Alliance for Wireless Power) have called for a higher frequency standard (6.78 MHz) for wireless charging systems. At higher frequencies, traditional silicon-based power transistors (MOSFETs) approach the limit of their switching capability. EPC’s eGaN FETs offer higher efficiency compared to MOSFETs at these higher frequencies.

This wireless power demonstration system jointly developed by EPC and WiTricity is a class-D power system operating at 6.78 MHz, and capable of delivering up to 15 W to a load. The purpose of this demonstration system is to simplify the evaluation process of the wireless power technology. The system includes all the critical components in a single system that can be easily connected to demonstrate the powering of a device with wireless energy transfer.

If you are interested in learning more about wireless energy transfer and this demonstration system in particular, a visit by a trained EPC field application engineer can be scheduled by contacting EPC at the following:

Additional application and design information for EPC eGaN FETs is available through the following resources:

About EPC

EPC is the leader in enhancem Read more

Categories: Press Releases

Efficient Power Conversion (EPC) Introduces Eighth Brick DC-DC Power Converter Demonstration Board Featuring (eGaN®) FETs

EPC9102 showcases the performance that can be achieved using the EPC2001 eGaN FETs and the LM5113 eGaN FET driver from Texas Instruments

EL SEGUNDO, Calif.—May, 2012 — Efficient Power Conversion Corporation (EPC) introduces the EPC9102, a fully functional eighth brick converter. This board is a 36 V – 60 V input to 12 V output, 375 kHz phase-shifted full bridge (PSFB) eighth brick converter with 17 A maximum output current. The EPC9102 uses the 100 V EPC2001 eGaN FETs in conjunction with the recently introduced LM5113 100V half-bridge gate driver from Texas Instruments. The LM5113 is the industry’s first driver to optimally drive and fully release the benefits of enhancement mode gallium nitride FETs. The EPC9102 demonstrates the performance capabilities of high switching frequency eGaN FETs when coupled with this eGaN driver.

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Categories: Press Releases

Dr. David Reusch Joins Efficient Power Conversion (EPC) as Director Applications Engineering

Dr. Reusch will be creating benchmark power converter designs and assisting customers in the use of eGaN FETs® for high frequency, high performance power conversion systems

EL SEGUNDO, Calif.—May 2012 — Efficient Power Conversion Corporation (EPC) is proud to announce that Dr. David Reusch has joined the EPC engineering team as Director, Applications Engineering.

As a member of the EPC applications team, Dr. Reusch’s focus will be on designing lower loss and higher power density benchmark circuits that demonstrate the benefits of using gallium nitride transistors. His initial focus will be on their use in higher voltage DC-DC converters and resonant, soft-switching converters. Dr. Reusch’s research and experience in these applications will be shared with customers to accelerate their designs using high performance eGaN FETs. His designs will demonstrate GaN transistors’ superior performance over MOSFETs.

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Categories: Press Releases

Efficient Power Conversion Corporation CEO Alex Lidow to speak at Credit Suisse "Future of Semiconductors" investor conference

EL SEGUNDO, Calif.—May, 2012 — Efficient Power Conversion Corporation (EPC) CEO Alex Lidow will speak at the private Credit Suisse investor conference in San Francisco on Tuesday, May 22, at 10:00 a.m. Pacific time. Dr. Lidow will discuss the growing market for gallium nitride transistors with a focus on EPC’s eGaN® FET technology and products. As a displacement technology, GaN FETs can be used in an array of current MOSFET applications in addition to enabling new high volume applications, such as wireless power and envelope tracking, a method for significant energy savings in communication devices.

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Categories: Press Releases

Efficient Power Conversion Corporation (EPC) Named to EE Times Silicon 60 List of Emerging New Technology Startups

EL SEGUNDO, Calif. – April, 2012 - Efficient Power Conversion Corporation, (www.epc-co.com) the leader in enhancement mode gallium nitride FET technology, announces today that it has been recognized with inclusion in the EE Times Silicon 60 list of 60 Emerging Startups. Companies are selected by the editorial team at EE Times based on a mix of criteria including: technology, intended market, maturity, financial position, investment profile, and executive leadership.

"It is an honor to receive this recognition from EE Times as one of the hottest emerging electronics companies and as EE Times has noted, 'an emerging company worthy of tracking,'" commented Alex Lidow, CEO, Efficient Power Conversion Corporation.

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Categories: Press Releases

New gate driver extends TI's family of GaN FET driver ICs

Texas Instruments Incorporated (TI) introduced a low-side gate driver for use with MOSFETs and Gallium-Nitride (GaN) power field-effect transistors (FETs) in high-density power converters. The new LM5114 drives GaN FETs and MOSFETs in low-side applications, such as synchronous rectifiers and power factor converters. Together with the LM5113, the industry's first 100-V half-bridge GaN FET driver announced in 2011, the family provides a complete isolated DC/DC conversion driver solution for high-power GaN FETs and MOSFETs used in high-performance telecom, networking and data center applications. For more information, samples and an evaluation board, visit www.ti.com/gan

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Efficient Power Conversion Corporation (EPC) Publishes Industry’s First Application-focused Gallium Nitride (GaN) Transistors Textbook

Written by industry experts, "GaN Transistors for Efficient Power Conversion" provides both theory and applications for gallium nitride transistors

EL SEGUNDO, Calif. - January 2012 - Efficient Power Conversion Corporation (www.epc-co.com) announces the publication of a textbook designed to provide power system design engineers basic technical and application-focused information on how to design more efficient power conversion systems using gallium nitride-based transistors.

"This book will help designers to understand the exceptional benefits of GaN technology and the intricacies of working with GaN transistors in power conversion systems. It will set the stage for a new era in power electronics applications that surpass everything that came before it," noted Sam Davis, Editor-in-Chief, Power Electronics Technology magazine.

This practical guide provides guidance on the use of GaN transistors in widely used power electronics applications, ranging from buck converters to Power over Ethernet. Also included are discussions on fundamental power engineering subjects such as; performance characteristics of GaN transistors, layout considerations for GaN circuits, paralleling GaN transistors and driver IC requirements for GaN transistors. The final chapters address GaN device reliability, their exceptional radiation-resistant characteristics as well as their future in power electronics.

According to Alex Lidow, Efficient Power Conversion CEO and co-author of this book, "Gallium nitride transistors provide a long-awaited displacement technology for MOSFETs, and much has been learned over the past several years about how to apply this new technology. In addition to increasing the efficiency of today’s power conversion systems, GaN transistors open up new applications such as RF envelope tracking and wireless power transmission that are much needed to keep pace with the ever-expanding communications industry and battery operated products. These new applications are enabled by the high frequency switching capability combined with the high voltage and high power capabilities of gallium nitride FETs."

"GaN Transistors for Efficient Power Conversion" is available for $39.95 and can be purchased from the EPC website (www.epc-co.com), Digi-Key (www.digikey.com) or Amazon (www.amazon.com).

About the Authors

The four authors, Alex Lidow, Michael DeRooij, Johan Strydom and Yanping Ma are working for EPC, the first company to introduce enhancement mode GaN transistors. Collectively the authors have over ninety years experience working in power transistor design and application. All four authors have doctorates in scientific disciplines and are widely recognized published authors. They are pioneers in the emerging GaN transistor technology with Dr. Lidow concentrating on transistor process design, Drs. DeRooij and Strydom focusing on power transistor applications and Dr. Ma providing expertise on quality assurance and reliability.

About EPC

EPC is the leader in enhancement mode Gallium Nitride based power management devices. EPC is the first to introduce enhancement-mode Gallium-Nitride-on-Silicon FETs (trademarked as eGaN® FETs) as power MOSFET replacements in applications such as servers, netbooks, notebooks, LED lighting, cell phones, base stations, micro-inverters, and class-D audio amplifiers with device performance many times greater than the best silicon po Read more

Categories: Press Releases

The National LM5113 from Texas Instruments has been honored with an Electronic Products’ Product of the Year award

EL SEGUNDO, Calif-January 3, 2012 — The National LM5113 from Texas Instruments has been honored with an Electronic Products’ Product of the Year award. The editors of Electronic Products — a leading trade publication for electronic design engineers — evaluated thousands of products launched in 2011. The winning products were selected on the basis of innovative design, significant advancement in technology or application and substantial achievement in price and performance.

The LM5113 is the industry’s first driver designed specifically for enhancement mode gallium nitride FETs. Enhancement-mode GaN FETs enable new levels of efficiency and power density compared to standard metal-oxide semiconductor field-effect transistors (MOSFETs) due to their low on-resistance (Rdson) and gate charge (Qg) as well as their ultra-small footprint, but driving them reliably presented new challenges. National’s LM5113 driver integrated circuit (IC) overcomes these challenges, enabling power designers to realize the benefits of GaN FETs in a variety of popular power topologies.

"We congratulate Texas Instruments on this prestigious award," said Alex Lidow, co-founder and CEO for Efficient Power Conversion Corporation. "The release of the LM5113 bridge driver has been instrumental in accelerating the adoption of our eGaN® FETs by offering designers a true plug and play solution. The LM5113 bridge driver unlocks the efficiency capability of eGaN FETs, enabling designers to achieve new performance benchmarks in power and system density."

http://www2.electronicproducts.com/Driving_GaN_FETs_becomes_reality-article-poypo_TI_NatSemi_jan2012-html.aspx

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Efficient Power Conversion Corporation (EPC) Market Leading eGaN® FET Receives EDN China Innovation Leading Product Award

EL SEGUNDO, Calif. – December, 2011 - Efficient Power Conversion Corporation (www.epc-co.com) announces today that it has been recognized with a Leading Product Award by EDN China Innovation Award 2011 in its Power Device and Module category. In its seventh year, the EDN China Innovation Award 2011 is the benchmark event for recognizing product innovation by China’s electronics design engineers and managers.

“It is an honor to receive this recognition as an industry leading product from EDN China. The EPC2010 is one member of our family of eGaN FETs being adopted by customers as higher performance replacements for silicon-based MOSFETs,” noted Alex Lidow, CEO, Efficient Power Conversion Corporation.

EPC2010 is EPC’s second-generation 200 Volt enhancement mode gallium nitride (eGaN) power transistor with high frequency switching, enhanced performance in a lead-free, RoHS package.

The EPC2010 FET is a 200 VDS device with a maximum RDS(ON) of 25 milliohms with 5 V applied to the gate. It has an increased pulsed current rating of 60 A (compared with 40 A for the EPC1010), improved RDS(ON) at very low gate voltages, and lower capacitance.

Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2010 is smaller and has many times superior switching performance. Applications that benefit from eGaN FET performance include RF envelope tracking, wireless power transmission, high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high frequency circuits.

An application note and datasheet for EPC2010 eGaN can be found at http://bit.ly/GaNgn2 and http://epc-co.com/epc/Products/eGaNFETs.aspx respectively.

About EDN China

EDN China Innovation Awards 2011 featured nine major technology categories: Power Device and Module, Embedded System, Microprocessor/DSP, Programmable Logic, Analog/Mixed Signal IC, Test & Measurement, Development Tool and Software, Passive Component and Sensor, Communications & Networking IC. Besides, the Engineers’ Most Favored Distributor was selected. EDN China started 17 years ago as the first publication focusing on electronics designs and knowledge exchange in the country. It has more than 400,000 registered readers. For details, please visit website www.ednchina.com.

 

About EPC

EPC is the leader in enhancement mode Gallium Nitride based power management devices. EPC is the first to introduce enhancement-mode Gallium-Nitride-on-Silicon (eGaN) FETs as power MOSFET replacements in applications such as servers, netbooks, notebooks, LED lighting, cell phones, base stations, micro-inverters, and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. Visit our web site: www.epc-co.com.

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press contact:

Efficient Power Conversion: Joe Engle tel: 310.986.0350 email: Read more

Categories: Press Releases

Efficient Power Conversion (EPC) Introduces Buck Power Conversion Demonstration Board Featuring (eGaN®) FETs

EPC9101 demonstrates size reduction and efficiency enhancement for buck power conversion achieved using high frequency switching eGaN power transistors

EL SEGUNDO, Calif.—October 2011 — Efficient Power Conversion Corporation (EPC) introduces the EPC9101, a fully functional buck power conversion demonstration circuit. This board is an 8 V-19 V input to 1.2 V, 18 A maximum output current, 1MHz buck converter. It uses the EPC2014 and EPC2015 eGaN FETs in conjunction with the recently introduced National LM5113 100V half-bridge gate driver from Texas Instruments. The LM5113 is the industry’s first driver designed specifically for enhancement mode gallium nitride FETs. The EPC9101 demonstrates the reduced size and performance capabilities of high switching frequency eGaN FETs when coupled with this dedicated eGaN driver.

The power stage footprint of the EPC9101 circuit is only 8mm x 16mm (about 0.2 square inches) and about 8mm high when taking components from both sides into consideration. Despite its small size, the board has a peak power efficiency of 88% and is capable of delivering 18 amps of current at 1.2 volts.

To assist the design engineer, the EPC9101 is easy to set up to evaluate the performance of the EPC2014 and EPC2015 eGaN FETs and LM5113 gate driver. The board is intended for bench evaluation with low ambient temperature and convection cooling. Additional heat sinking and forced-air cooling can be used to evaluate beyond the rated current capability of the demonstration circuit.

A similar fully functional buck power conversion demonstration board, the LM5113LLPEVB, is available from Texas Instruments. This board features the LM5113 driver in operation with 100V EPC2001 eGaN FETs. The LM5113LLPEVB demo board is a 15 V – 60 V input to10 V, 10 A, 800kHZ, buck converter. Like the EPC9101, this board demonstrates the size and performance enhancement that can be achieved using the EPC2001 eGaN FETs and the LM5113 gate driver.

A Quick Start Guide, http://epc-co.com/epc/documents/guides/EPC9101_qsg.pdf, is included with the EPC9101 demo board for reference and ease of use.

EPC9101 demo boards are priced at $150.00 each and are available for immediate delivery from Digi-Key at http://digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en

Design Tools Available Featuring EPC eGaN FETs with the Texas Instruments LM5113 driver:

Design Information an Read more

Categories: Press Releases

Efficient Power Conversion Corporation (EPC) Achieves ISO 9001:2008 Certification for Quality Management

EPC has received ISO certification for the design, development, marketing and sales of gallium nitride power transistors and power management devices

EL SEGUNDO, Calif. – September 2011 - Efficient Power Conversion Corporation (www.epc-co.com) the leader in energy-efficient enhancement mode gallium nitride (eGaN®) power transistors used in power conversion applications, has received the International Organization for Standardization ISO 9001:2008 certification for its quality management system.

The ISO standards are published by the International Organization for Standardization and available through national standards bodies. To achieve certification, EPC passed an assessment conducted by Det Norske Veritas, an ANSI-ASQ National Accreditation Board (ANAB) certified auditor.

Upon receiving ISO certification, Alex Lidow, co-founder and CEO, noted, “Achieving ISO 9001:2008 certification is recognition that for EPC quality has been a way of life from the beginning. Our quality management system is dedicated to continuous improvement, our processes are well documented and controlled, changes are made in a considered way and we listen systematically to our customers.”

About EPC

EPC is the leader in enhancement mode Gallium Nitride based power management devices. EPC is the first to introduce enhancement-mode Gallium-Nitride-on-Silicon (eGaN) FETs as power MOSFET replacements in applications such as servers, netbooks, notebooks, LED lighting, cell phones, base stations, micro-inverters, and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. Visit our web site: www.epc-co.com.

Follow EPC on Twitter at http://twitter.com/#!/EPC_CORP

Sign-up to receive EPC updates via email: http://bit.ly/EPCupdates

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press contact:

Efficient Power Conversion: Joe Engle tel: 310.986.0350 email: [email protected]

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Categories: Press Releases

Efficient Power Conversion (EPC) Introduces EPC9006 Development Board Featuring Enhancement Mode Gallium Nitride (eGaN®) FETs

EPC9006 facilitates rapid design of high frequency switching power conversion systems based on the 100 V EPC2007 with a ready-made and easy-to-connect development board including well-documented engineering support materials.

EL SEGUNDO, Calif.—September, 2011 — Efficient Power Conversion Corporation (EPC) introduces the EPC9006 development board to make it easier for engineers to start designing with a 100 V enhancement-mode gallium nitride (eGaN) field effect transistor (FET) in applications such as high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high frequency circuits.

The EPC9006 development board is a 100 V maximum device voltage, 5 A maximum output current, half bridge with onboard gate drives, featuring the EPC2007 enhancement mode (eGaN) field effect transistor (FET). The purpose of this development board is to simplify the evaluation process of the EPC2007 eGaN FET by including all the critical components on a single board that can be easily connected into any existing converter.

The EPC9006 development board is 2” x 1.5” and contains not only two EPC2007 GaN FETs in a half bridge configuration with gate drivers, but also an on board gate drive supply and bypass capacitors. The board contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation.

A Quick Start Guide, http://epc-co.com/epc/documents/guides/EPC9006_qsg.pdf, is included with the EPC9006 development board for reference and ease of use.

EPC9006 development boards are priced at $95.00 each and are available for immediate delivery from Digi-Key at http://digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en

Design Information and Support for eGaN FETs:

About EPC

EPC is the leader in enhancement mode Gallium Nitride based power management devices. EPC was the first to introduce enhancement-mode Gallium-Nitride-on-Silicon (eGaN) FETs as power MOSFET replacements in applications such as servers, netbooks, notebooks, LED lighting, cell phones, base stations, flat-panel displays, and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. Visit our web site: www.epc-co.com.

Follow EPC on Twitter at http://twitter.com/#!/EPC_CORP

Sign-up to receive EPC updates via email: < Read more

Categories: Press Releases

Efficient Power Conversion Corporation (EPC) Expands eGaN® FET Family with Second Generation 100 Volt, 30 milliohm Power Transistor

EPC2007 delivers high frequency switching with enhanced performance in lead-free, RoHS compliant package.

EL SEGUNDO, Calif. – September, 2011 - Efficient Power Conversion Corporation (www.epc-co.com) announces the introduction of the EPC2007 as the newest member of EPC’s second-generation enhanced performance eGaN FET family. The EPC2007 is environmentally friendly; being lead free, RoHS-compliant (Restriction of Hazardous Substances), and halogen free.

The EPC2007 FET is a 1.87 mm2, 100 VDS, 6 A device with a maximum RDS(ON) of 30 milliohms. This second generation eGaN FET provides significant performance advantages over the first-generation EPC1007 eGaN device. The EPC2007 is fully enhanced at a lower gate voltage and has greater immunity to fast switching transients than the predecessor.

Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2007 is much smaller and has many times superior switching performance. Applications that benefit from eGaN FET performance include hard-switched and high frequency circuits such as isolated DC-DC power supplies, point-of-load converters, and class D audio amplifiers.

“With the introduction of the EPC2007 we continue to add to our industry-leading eGaN FET portfolio providing power design engineers the opportunity to increase efficiency and reduce size of their power conversion systems when compared with silicon-based MOSFETs,” noted Alex Lidow, co-founder and CEO.

In 1k piece quantities, the EPC2007 is priced at $1.31 and is immediately available through Digi-Key Corporation at http://digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en

Design Support

An application note detailing the performance improvements of the EPC2007 eGaN FET can be found at http://epc-co.com/epc/documents/product-training/Characteristics_of_Second_Generation_eGaN_FETs.pdf

Table 1 – Summary of EPC2007 Specification Ratings

About EPC

EPC is the leader in enhancement mode Gallium Nitride based power management devices. EPC was the first to introduce enhancement-mode Gallium-Nitride-on-Silicon (eGaN) FETs as power MOSFET replacements in applications such as servers, netbooks, notebooks, LED lighting, cell phones, base stations, flat-panel displays, and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. Visit our web site: www.epc-co.com.

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press Contact

Efficient Power Conversion Corporation Joe Engle, 310.986.0350 [email protected]

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Categories: Press Releases

Efficient Power Conversion (EPC) Introduces Development Board for Systems Using Enhancement Mode Gallium Nitride (eGaN®) FETs

EPC9005 facilitates rapid design of high frequency switching power conversion systems based on the 40 V EPC2014 with a ready-made and easy-to-connect development board including well-documented engineering support materials.

EL SEGUNDO, Calif.—August 2011 — Efficient Power Conversion Corporation (EPC) introduces the EPC9005 development board to make it easier for users to start designing with a 40 V enhancement-mode gallium nitride (eGaN) field effect transistor (FET) in applications such as high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high frequency circuits.

The EPC9005 development board is a 40 V maximum device voltage, 7 A maximum output current, half bridge with on board gate drives, featuring the EPC2014 40 V eGaN FET. The purpose of this development board is to simplify the evaluation process of the EPC2014 eGaN FET by including all the critical components on a single board that can be easily connected into an existing converter.

The EPC9005 development board is 2” x 1.5” and contains not only two EPC2014 GaN FETs in a half bridge configuration with gate drivers, but also an on board gate drive supply and bypass capacitors. The board contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation.

A Quick Start Guide, http://epc-co.com/epc/documents/guides/EPC9005_qsg.pdf, is included with the EPC9005 development board for reference and ease of use.

EPC9005 development boards are priced at $95.00 each and are available for immediate delivery from Digi-Key at http://digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en

Design Information and Support for eGaN FETs:

About EPC

EPC is the leader in enhancement mode Gallium Nitride based power management devices. EPC was the first to introduce enhancement-mode Gallium-Nitride-on-Silicon (eGaN) FETs as power MOSFET replacements in applications such as servers, netbooks, notebooks, LED lighting, cell phones, base stations, flat-panel displays, and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. Visit our web site: www.epc-co.com.

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press Contact

Efficient Power Conversion Corporation Joe Engle, 310.986.0350 Read more

Categories: Press Releases

Efficient Power Conversion Corporation (EPC) Expands eGaN® FET Family with Second Generation 40 Volt, 16 milliohm Power Transistor

EPC2014 delivers high frequency switching with enhanced performance in lead-free, RoHS compliant package.

EL SEGUNDO, Calif. – August 2011 - Efficient Power Conversion Corporation (www.epc-co.com) announces the introduction of the EPC2014 as the newest member of EPC’s second-generation enhanced performance eGaN FET family. The EPC2014 is environmentally friendly; being lead free, RoHS-compliant (Restriction of Hazardous Substances), and halogen free.

The EPC2014 FET is a 1.87 mm2, 40 VDS, 10 A device with a maximum RDS(ON) of 16 milliohms with 5 V applied to the gate. This eGaN FET provides significant performance advantages over the first-generation EPC1014 eGaN device. The EPC2014 has an increase in maximum junction temperature rating to 150 degrees C and is fully enhanced at a lower gate voltage than the predecessor EPC1014.

Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2014 is much smaller and has many times superior switching performance. Applications that benefit from eGaN FET performance include high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high frequency circuits.

“In addition to increases in performance, this new generation enhancement mode gallium nitride FET is offered as lead-free, halogen-free and RoHS-compliant,” noted Alex Lidow, co-founder and CEO.

In 1k piece quantities, the EPC2014 is priced at $1.12 and is immediately available through Digi-Key Corporation at http://digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en

Design Support

An application note detailing the performance improvements of the EPC2014 eGaN FET can be found at http://epc-co.com/epc/documents/product-training/Characteristics_of_Second_Generation_eGaN_FETs.pdf

Table 1 – Summary of EPC2014 Specification Ratings

About EPC

EPC is the leader in enhancement mode Gallium Nitride based power management devices. EPC is the first to introduce enhancement-mode Gallium-Nitride-on-Silicon (eGaN) FETs as power MOSFET replacements in applications such as servers, netbooks, notebooks, LED lighting, cell phones, base stations, micro-inverters, and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. Visit our web site: www.epc-co.com.

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press contact:

Efficient Power Conversion: Joe Engle tel: 310.986.0350 email: [email protected]

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