November, 2014






GaN Transistors for Efficient Power Conversion 2nd Edition

Our 2nd edition of

GaN Transistors for Efficient Power Conversion

textbook was just released and published by John Wiley and Sons. Our authors, namely Drs Johan Strydom, Michael De Rooij, David Reusch and Alex Lidow, expanded in the book our applications focus for practicing engineers.

According to Dr. Fred C. Lee, Director, Center for Power Electronics Systems at Virginia Tech, "This book is a gift to power electronics engineers. It offers a comprehensive view, from device physics, characteristics, and modeling to device and circuit layout considerations and gate drive design, with design considerations for both hard switching and soft switching. Additionally, it further illustrates the utilization of GaN in a wide range of emerging applications."

This 2nd edition can be bought individually on or  If you would like to buy in bulk, please let us know. Wiley can refer a local representative company to arrange bulk shipment for your company to save costs. 



November, 2014


Dear Subscriber,

In the second half of this year, we have achieved quite a few milestones and successes in our product launches. These include our generation 4 eGaN FETs, which have received positive feedback with many customer projects in the pipeline. Ranging from 30 V to 200 V, these products provide significant reduction in RDS(on) which greatly increase their output current capability in applications including high power density DC-DC converters, Point-of-Load converters, synchronous rectification in DC/DC and AC/DC converters, motor drives, LED lighting, and industrial automation.


Designers have also started working with monolithic half-bridge EPC2100 GaN power integrated circuit, the first in a family of half-bridges that will be introduced over the December quarter.  This initial product enables 12 V to 1.2 V point-of-load system efficiency at 25 A output over 90% while increases efficiency and power density for complete buck converter systems approaching 93% at 10 A. 


In addition, EPC2025 GaN power transistor offers power systems designers a 300 V power transistor capable of 2ns rise times for high frequency DC-DC converters and medical diagnostic instruments.

GaN is Reliable

EPC's eGaN FETs are produced in a chip scale or "flip-chip" format that eliminates the inefficiencies of conventional semiconductor packaging.  This format eliminates:


a.   package-related parasitic resistance and inductance;

b.   thermal interfaces which in turn improves the thermal resistance of the eGaN FET as compared to comparable MOSFETs;

c.   all of the package-related reliability problems that silicon MOSFETs have been experiencing including wire bond failures, epoxy delamination, and the possibility of die cracking in the package molding and trimming process.


The designer now has a product with minimum waste and fewer mechanical elements to fail. 


To demonstrate this significant improvement, in the qualification testing eGaN FETs were subjected to a wide variety of standard stresses for device qualification well beyond their maximum rated operating limits to further demonstrate the robustness of the technology and the form-factor.  These tests included High Temperature Reverse Bias, High Temperature Gate Bias, High Temperature Storage, Temperature Cycling, High Temperature High Humidity Reverse Bias, Autoclave, Moisture Sensitivity, and Electrostatic Discharge. 

Parts were all tested to be stable under the stress conditions and are fully qualified for the die size covered by the device test matrix.  We also use drain-source stress and gate stress tests to accelerate the known failure mechanisms of the transistor.  These tests have further shown that the eGaN FET products are able to operate with very low probability of failures within the reasonable lifetime of end products manufactured today. For full details of our testing, please check out the Reliability page on our website at


Knowledge Exchange at Key Industry Conferences


There will be many chances to meet the EPC team at upcoming conferences early in 2015.  We are honored to have been selected as a keynote presenter at DesignCon in Santa Clara and at the Compound Semiconductor Conference in Munich.  We will also have significant activities at APEC (Applied Power Electronics Conference) in Charlotte, including a booth on the exhibit floor.  Check our calendar of events for details at

DesignCon 2015:  "Faster and Lower Cost than Silicon - GaN is Making a New Future"

 For the first time in 60 years there is a serious contender to the dominance of silicon in the world of electronics. Gallium nitride, grown as a thin layer on top of a standard silicon substrate, has demonstrated both a dramatic improvement in transistor performance and the ability to be produced at a lower cost than their aging silicon ancestors. In this keynote talk, the focus will be on enhancement-mode GaN transistors, the challenges that we have uncovered in areas of test and measurement, and the new applications that have emerged as a result of their ability to switch higher voltages and higher currents faster than anything before. Three examples of the impact of this capability in emerging applications - LiDAR (Light Distancing and Ranging), envelope tracking, and high-efficiency wireless energy transfer - will be discussed, including comparisons between the capability of GaN and silicon.


Compound Semiconductor Conference 2015: "Ditching the package to drive down GaN transistor costs"

In the world of switching power transistors, the package surrounding the semiconductor has always reduced the performance and increased the cost of the device. Generalizing customers' dissatisfaction with transistor packaging, there are five key complaints: (1) packages take up too much space, (2) packages add too much electrical resistance, (3) packages add too much inductance, (4) packages add too much thermal resistance, and (5) packages add too much cost. In this presentation we will discuss the reasons why everyone should consider ditching transistors in a package and convert to chip scale LGA gallium nitride transistors that address each of the key complaints.

 Best regards,

Renee Yawger
Marketing Director