EPC Conference Schedule – All times listed as local to Nuremburg.
Bi-Directional 1/16th Brick 48 V – 12 V Converter using Monolithic GaN ePower™ Stage
Tuesday, May 4, 2021 9:50 AM (Stream 4)
Advances in GaN integrated circuit (IC) technology have enabled the integration of the half bridge and gate drivers, resulting in a single chip solution that simplifies layout, minimizes area, and reduces cost. This paper will introduce a bi-directional 1/16th brick DC-DC converter using the integrated GaN power stage for 48 V-to-12 V applications, with a maximum output power of 300 W and peak efficiency of 95%.
A 1 kW eGaN FET-Based LLC Resonant Converter in the 1/8th Power Brick Size for 48 V Server Applications
Tuesday, May 4, 2021 3:45 PM (Stream 3)
This paper presents the design of a 1 kW eGaN FET-based LLC resonant converter in the 1/8th power brick size for 48 V server applications. The LLC resonant topology will be introduced with GaN FET selection and parameter design to realize zero voltage switching (ZVS). A simple method to attach a heat-spreader to both sides of the board is adopted to improve the thermal performance. The prototype of the standalone 1 kW LLC resonant converter achieves 97.6% peak efficiency and 96.5% full-load efficiency.
Exhibitor Seminar: How GaN is Driving Changes in Autonomy, Automotive, and eMobility
Tuesday, May 4, 2021 4:30 PM – 5:00 PM
Join EPC CEO and co-founder, Alex Lidow, to discover how GaN is driving changes in autonomy, automotive, and eMobility.
Autonomy: GaN FETs and ICs are a vital element in the “eyes” of autonomous vehicles by power the lasers used in lidar systems for applications from food delivery pods to warehouse robots to drones to fully autonomous taxis.
Automotive: For 48 V automotive bus systems in mild hybrid electric vehicles, GaN technology increases the efficiency, shrinks the size, and reduces system cost.
eMobility: The rapid emergence of scooters and e-bikes has opened new markets for chargers (wired and wireless), and compact motor drives. GaN transistors and integrated circuits are in all these applications due to their affordability, efficiency, and small size.
Panel Discussion hosted by Bodo’s Power Systems: GaN-based 3 kW Bi-directional Converter for 48 V Automotive Power
Wednesday, May 5, 2021 3:55 PM – 4:25 PM
For 48 V bus systems, GaN technology increases the efficiency, shrinks the size, and reduces system cost. Due to the fast-switching speed, GaN-based solutions can operate at higher frequencies than traditional MOSFET solutions, reducing the number of phases per systems and thus, reducing both size and cost. In A GaN-based 3 kW 48 V to 12 V DC-DC converter, this higher switching frequency results in a solution that iss 35% smaller, results in 10 W lower inductor DCR losses, AND reduces cost of the system by about 20% over the MOSFET solution.
Educational Tutorial: Maximizing GaN FET and IC Performance
Wednesday, May 12, 2021 3:00 PM - 6:00 PM
Gallium nitride power semiconductors have seen increased adoption in many power electronic applications. The performance of GaN FETs continues to evolve and improve but the challenges of maximizing the GaN benefit increases too. This tutorial will provide engineers the tools and understanding needed to fully utilize the potential of GaN FETs and integrated circuits.
The seminar contains four main sections; 1) An introduction the important distinguishing characteristics of GaN FETs, 2) The fundamentals of designing with GaN FETs and ICs, 3) GaN-based application examples demonstrating the techniques presented in section two, and 4) an introduction to the GaN integration revolution.