To make this easy for the designer, in June of 2011, Texas Instruments announced the industry’s first eGaN FET driver. The LM5113 is a 100V half-bridge driver addressing a wide range of power converter topologies. Subsequently additional GaN compatible driver and controller options have become available in the market.
A list of known partner IC’s is maintained on the eGaN Drivers and Controllers page.
Additionally, we have developed drive level shifters, and discrete gate drivers that not only manage drive voltage, but also manage deadtime. For a detailed description of our recommended discrete solution please see the article “How2 Get the Most Out of GaN Power Transistors”. It should also be noted that eGaN devices have a very low temperature coefficient for their threshold voltage. This gives the user added safety margin despite the lower threshold voltages at room temperature.