After 30 years of study, silicon MOSFET degradation mechanisms are well understood and therefore the failure rates can be estimated at various operating conditions. The structure of EPC's eGaN® FETs is significantly different from MOSFETs, and therefore the degradation mechanisms are quite different. Since eGaN technology employs a new type of semiconductor material, acceleration factors used for silicon may not be applicable. EPC has been publishing reliability reports on a regular basis that give the user more and more detail, and at higher statistical confidence levels. All of these reports can be found on the eGaN FET Reliability page. We will continue to use this publication to present data on failure mechanisms as they emerge from our testing.