GaN Talk a blog dedicated to crushing silicon
Term: Power Conversion
2 post(s) found

New 100 V eGaN Devices Increase Benchmark Performance Over the Aging Silicon Power MOSFET

New 100 V eGaN Devices Increase Benchmark Performance Over the Aging Silicon Power MOSFET
Sep 22 2020

Efficient Power Conversion (EPC) is increasing the performance distance between the aging silicon power MOSFET and eGaN transistors with 100 V ratings.  The new fifth-generation “plus” devices have about 20% lower RDS(on) and increased DC ratings compared with the prior fifth-generation products.  This performance boost comes from the addition of a thick metal layer and a conversion from solder balls to solder bars.

eGaN vs. Silicon

eGaN vs. Silicon
Jan 23 2020

This post was originally published by Dr. John Glaser & Dr. David Reusch on June 13, 2016 on the Power Systems Design web site.

Comparing Dead-time Losses for eGaN FETs and Silicon MOSFETs in Synchronous Rectifiers

There have been several comparisons of eGaN FETs with silicon MOSFETs in a variety of applications, including hard-switched, soft-switched, and high-frequency power conversion. These studies have shown that eGaN FETs have large efficiency and power density advantages over silicon MOSFETs. Here we’ll focus on the use of eGaN FETs in synchronous rectifier (SR) applications and the importance of dead-time management. We show that eGaN FETs can dramatically reduce loss due to dead-time in synchronous rectifiers above and beyond the benefits of low RDS(on)and charge.