GaN Talk a blog dedicated to crushing silicon
Term: AI
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How to Design a 12 V to 48 V / 500 W 2-Phase Boost Converter Using eGaN FETs and the Renesas ISL81807 Controller with Same BOM Size as Silicon, Offering Superior Efficiency and Power Density

How to Design a 12 V to 48 V / 500 W 2-Phase Boost Converter Using eGaN FETs and the Renesas ISL81807 Controller with Same BOM Size as Silicon, Offering Superior Efficiency and Power Density
Jan 07 2022

48 V is being adopted in many applications, including AI systems, data centers, and mild hybrid electric vehicles. However, the conventional 12 V ecosystem is still dominant, so a high power density 12 V to 48 V boost converter is required. The fast-switching speed and low RDS(on) of eGaN FETs can help address this challenge. In this post, the design of a 12 V to 48 V, 500 W DC-DC power module using eGaN® FETs directly driven by eGaN FET compatible ISL81807 controller IC from Renesas in the simple and low-cost synchronous boost topology is evaluated.