GaN Talk a blog dedicated to crushing silicon
Term: Space
3 post(s) found

2020 New Year with GaN

2020 New Year with GaN
Jan 02 2020

Dear Friends, colleagues and partners of EPC,

Happy New Year to you and your family from all of us at EPC!

2019 was a year to remember for EPC’s GaN innovations and the multiple use cases for GaN that have come to fruition. EPC’s latest generation of GaN products have enabled engineers to gain power stage advantages due to their low RDS(on) characteristics, higher efficiency, enhanced thermal properties, small size and low cost. Now, more than ever, power system designers are switching from silicon devices to higher performance GaN components.

Revisiting What It Takes for a New Semiconductor Technology to be Disruptive

Revisiting What It Takes for a New Semiconductor Technology to be Disruptive
Jun 02 2016

In March 2010 Efficient Power Conversion (EPC) proudly launched our GaN technology at the CIPS conference in Nuremberg, Germany.  Parts and development kits were readily available off-the shelf and therefore designers could immediately get started with a new state-of-the-art semiconductor technology.

At that time, we listed four key attributes we believed a new semiconductor technology needed in order to be really disruptive to the end markets.  A lot has happened in the six years since.  GaN has continued to ascend as the presumptive replacement for the aging power MOSFET, yet there are still a few design engineers and technical managers that remain skeptical.  So let’s look again at these four key attributes and see where GaN stands in addressing them.