GaN Talk a blog dedicated to crushing silicon
Term: 48V
16 post(s) found

Use the Superior Power Density of Gallium Nitride FETs to Design a USB PD3.1 Power Supply with a 240 W, Universal AC Input

Use the Superior Power Density of Gallium Nitride FETs to Design a USB PD3.1 Power Supply with a 240 W, Universal AC Input
Aug 11 2022

48 volts is increasingly being adopted as the new standard for computing data centers and consumer electronics such as laptops. The new USB PD3.1 standard is also making inroads into laptops driven in part by the increase in USB voltage to 48 V that increases the total power delivery up to 240 W given a current limit of 5 A for the connectors and cables. Compatible power supplies using the new USB PD standard also face increasing pressure to yield a small form factor solution driving the need for high power-density. The fast-switching speed and low RDSon of GaN FETs address this challenge in multiple circuits that make up the power supply.

GaN Power Devices Achieve a High-Efficiency 48 V, 1.2 kW LLC Resonant Converter in a ⅛th Brick Size

GaN Power Devices Achieve a High-Efficiency 48 V, 1.2 kW LLC Resonant Converter in a ⅛th Brick Size
Jul 21 2022

There is increasing demand for extracting more power from standard 48 V bus converters for server applications' ever-increasing power requirements. GaN power devices allow a designer to achieve a converter's goals: high efficiency, small size & high current handling, ease, and high reliability. To whet your appetite, EPC designed a 1.2 kW resonant converter demo board (EPC9174) in an 1/8th brick form factor that achieves an impressive 97.3% peak efficiency.

See How GaN is Leading the 48 V Revolution Across Multiple Industries at APEC 2022

See How GaN is Leading the 48 V Revolution Across Multiple Industries at APEC 2022
Mar 16 2022

APEC is The Premier Global Event in Applied Power Electronics

Preparations are well underway for EPC to head to Houston for the Applied Power Electronics Conference (APEC). The team is excited to be back, in-person exhibiting a large variety of demonstrations showcasing how the superior performance of GaN is transforming the delivery of power across many industries, including computing, communications, and e-mobility.

Here’s a sneak peek at some of the key application areas we will be showcasing in Booth 1302 at APEC.

The 48 V/12 V Automotive Evaluation Power Modules (EPC9137, EPC9163, EPC9165) Utilize the Two-Phase Synchronous Buck/Boost Topology

The 48 V/12 V Automotive Evaluation Power Modules (EPC9137, EPC9163, EPC9165) Utilize the Two-Phase Synchronous Buck/Boost Topology
Feb 11 2022

The 48 V/12 V automotive evaluation power modules (EPC9137, EPC9163, EPC9165, etc) utilize the two-phase synchronous buck/boost topology. The edge connectors and controller card are also designed to operate two modules in parallel with one controller, effectively achieving four-phase and therefore double the rated current and power. An example using EPC9137 modules are shown in Figure 1.

How to Design a 12 V to 48 V / 500 W 2-Phase Boost Converter Using eGaN FETs and the Renesas ISL81807 Controller with Same BOM Size as Silicon, Offering Superior Efficiency and Power Density

How to Design a 12 V to 48 V / 500 W 2-Phase Boost Converter Using eGaN FETs and the Renesas ISL81807 Controller with Same BOM Size as Silicon, Offering Superior Efficiency and Power Density
Jan 07 2022

48 V is being adopted in many applications, including AI systems, data centers, and mild hybrid electric vehicles. However, the conventional 12 V ecosystem is still dominant, so a high power density 12 V to 48 V boost converter is required. The fast-switching speed and low RDS(on) of eGaN FETs can help address this challenge. In this post, the design of a 12 V to 48 V, 500 W DC-DC power module using eGaN® FETs directly driven by eGaN FET compatible ISL81807 controller IC from Renesas in the simple and low-cost synchronous boost topology is evaluated.

How to Design a Bi-Directional 1/16th Brick 48 V-12 V Converter Using Monolithic GaN ePower™ Stage

How to Design a Bi-Directional 1/16th Brick 48 V-12 V Converter Using Monolithic GaN ePower™ Stage
Dec 15 2020

Brick DC-DC converters are widely used in data center, telecommunication and automotive applications, converting a nominal 48 V bus to (or from) a nominal 12 V bus. Advances in GaN integrated circuit (IC) technology have enabled the integration of the half bridge and gate drivers, resulting in a single chip solution that simplifies layout, minimizes area, and reduces cost.

This application note discusses the design of a digitally controlled bi-directional 1/16th brick converter using the integrated GaN power stage for 48 V-to-12 V application, with up to 300 W output power, and peak efficiency of 95%.

The standard dimension of the 1/16th brick converter is 33 x 22.9 mm (1.3 x 0.9 inch). The height limit for this design is set to 10 mm (0.4 inch).

2020 New Year with GaN

2020 New Year with GaN
Jan 02 2020

Dear Friends, colleagues and partners of EPC,

Happy New Year to you and your family from all of us at EPC!

2019 was a year to remember for EPC’s GaN innovations and the multiple use cases for GaN that have come to fruition. EPC’s latest generation of GaN products have enabled engineers to gain power stage advantages due to their low RDS(on) characteristics, higher efficiency, enhanced thermal properties, small size and low cost. Now, more than ever, power system designers are switching from silicon devices to higher performance GaN components.

The Time for Disruption is Now − GaN Makes a Frontal Attack on Silicon Power MOSFETs

The Time for Disruption is Now − GaN Makes a Frontal Attack on Silicon Power MOSFETs
Nov 12 2019

Silicon has been around long enough. It’s time for a younger and far more fit challenger to take over semiconductor material dominance.

When I first started developing power devices 44 years ago, the “king of the hill” was the silicon power bipolar transistor.  In 1978 International Rectifier (IRF) launched power MOSFETs as a faster alternative to the slower and aging bipolar devices.  The early adopters of the power MOSFET were applications where the bipolar just was not fast enough.  The signature example for its adoption was the switching power supply for the desktop computer; first at Apple, and then at IBM

Building the Smallest, Most Cost Effective, Highest Efficiency Non-isolated 48 V to 5 - 12 V DC to DC Converters using latest Generation 100 V eGaN FETs

Building the Smallest, Most Cost Effective, Highest Efficiency Non-isolated 48 V to 5 - 12 V DC to DC Converters using latest Generation 100 V eGaN FETs
Apr 24 2019

The latest generation of 100 V GaN devices increase the efficiency, shrink the size, and reduce system cost for 48 V power conversion. The EPC2045, shown in figure 1, is rated at 100 V with 7 mΩ on- resistance that can carry a continuous current of 16 A. The EPC2045 is nearly one-tenth the footprint of a comparable Si MOSFET and has lower parasitic capacitances and can switch much faster than equivalent silicon devices, yielding lower switching loss even at higher switching frequency.

The EPC2053, shown in figure 2, is rated at 100 V with 4 mΩ on-resistance that can carry a continuous current of 32 A. The EPC2053 has lower parasitic capacitances and on-resistance than its silicon counterparts, yielding faster switching speed and lower power losses even at higher switching frequencies. These characteristics enable increasing the output power while shrinking the volume of the converter.

Exceeding 98% Efficiency in a Compact 48 V to 12 V, 900 W LLC Resonant Converter Using eGaN FETs

Exceeding 98% Efficiency in a Compact 48 V to 12 V, 900 W LLC Resonant Converter Using eGaN FETs
Apr 03 2019

Motivation

The rapid expansion of the computing and telecommunication market is demanding an ever more compact, efficient and high power density solution for intermediate bus converters. The LLC resonant converter is a remarkable candidate to provide a high power density and high-efficiency solution. eGaN® FETs with their ultra-low on-resistance and parasitic capacitances, benefit LLC resonant converters by significant loss reduction that is challenging when using Si MOSFETs. A 48 V to 12 V, 900 W, 1 MHz LLC DC to DC transformer (DCX) converter employing eGaN FETs such as EPC2053 and EPC2024 is demonstrated, yielding a peak efficiency of 98.4% and a power density exceeding 1500 W/in3.