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Term: DC-DC変換
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Exceeding 98% Efficiency in a Compact 48 V to 12 V, 900 W LLC Resonant Converter Using eGaN FETs

Exceeding 98% Efficiency in a Compact 48 V to 12 V, 900 W LLC Resonant Converter Using eGaN FETs
Apr 03 2019

Motivation

The rapid expansion of the computing and telecommunication market is demanding an ever more compact, efficient and high power density solution for intermediate bus converters. The LLC resonant converter is a remarkable candidate to provide a high power density and high-efficiency solution. eGaN® FETs with their ultra-low on-resistance and parasitic capacitances, benefit LLC resonant converters by significant loss reduction that is challenging when using Si MOSFETs. A 48 V to 12 V, 900 W, 1 MHz LLC DC to DC transformer (DCX) converter employing eGaN FETs such as EPC2053 and EPC2024 is demonstrated, yielding a peak efficiency of 98.4% and a power density exceeding 1500 W/in3.

How to Exceed 98% Efficiency in a Compact 48 V to 6 V, 900 W LLC Resonant Converter Using eGaN FETs

How to Exceed 98% Efficiency in a Compact 48 V to 6 V, 900 W LLC Resonant Converter Using eGaN FETs
Mar 12 2019

The rapid expansion of the computing and telecommunication market is demanding an ever more compact, efficient and high power density solution for intermediate bus converters. The LLC resonant converter is a remarkable candidate to provide a high power density and high efficiency solution. eGaN® FETs with their ultra-low on-resistance and parasitic capacitances, benefit LLC resonant converters by significant loss reduction that is challenging when using Si MOSFETs. A 48 V to 6 V, 900 W, 1 MHz LLC DC to DC transformer (DCX) converter employing eGaN FETs such as EPC2053 and EPC2023 is demonstrated, yielding a peak efficiency of 98.1% with a specific power of 48 W/cm2 (308 W/in2) and power density of 69 W/cm3 (1133 W/in3).