GaN Talk a blog dedicated to crushing silicon
Term: Gallium Nitride
16 post(s) found

Why GaN in Space?

Why GaN in Space?
Jun 28 2020

Packaged SEE Immune and Radiation Hardened enhancement mode gallium nitride (eGaN) devices offer dramatically improved performance over the aging Rad Hard silicon MOSFET, enabling a new generation of power converters in space operating at higher frequencies, higher efficiencies, and greater power densities than ever achievable before.

eGaN FETs Are Low EMI Solutions!

eGaN FETs Are Low EMI Solutions!
May 19 2020

GaN FETs can switch significantly faster than Si MOSFETs causing many system designers to ask − how does higher switching speeds impact EMI?

This blog discusses simple mitigation techniques for consideration when designing switching converter systems using eGaN® FETs and will show why GaN FETs generate less EMI than MOSFETs, despite their fast-switching speeds.

A 95%-Efficient 48 V-to-1 V/10 A VRM Hybrid Converter

A 95%-Efficient 48 V-to-1 V/10 A VRM Hybrid Converter
Oct 07 2018

Gab-Su Seo1,2, Ratul Das1, and Hanh-Phuc Le1
1Department of Electrical, Computer, and Energy Engineering, University of Colorado
2Power Systems Engineering Center, National Renewable Energy Laboratory, Colorado, U.S.A.

With drastically increasing demands for cloud computing and big data processing, the electric energy consumption of data centers in the U.S. is expected to reach 73 billion kWh by 2020 [1], which will account for approximately 10% of the U.S total electric energy consumption. A large portion of this consumption is caused by losses from inefficient power delivery architectures that require a lot of attention for improvements [2], [3].

Designing Manufacturable and Reliable Printed Circuit Boards Employing Chip-Scale eGaN FETs

Designing Manufacturable and Reliable Printed Circuit Boards Employing Chip-Scale eGaN FETs
Sep 07 2017

Written by Michael de Rooij and Alana Nakata - Efficient Power Conversion

Published in: PCIM Europe 2017; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of

eGaN FETs, which are available in non-traditional chip scale packages (CSP) as land grid array (LGA) and/or ball grid array (BGA) formats, have repeatedly demonstrated higher power density and higher efficiency performance than equivalent MOSFETs across various applications [1, 2]. Those improvements are contingent upon proper layout practices documented extensively in [1, 3] that minimize unwanted parasitic elements. Over the seven years since eGaN FETs were first launched into the market there have been a total of 127 device failures out of a total of more than 17 billion hours in actual use in the field, 75 of which were a result of poor assembly technique or poor printed circuit board (PCB) design practices [4]. Designers are becoming more familiar with the PCB design rules that affect manufacturability and are less forgiving compared to MOSFETs due to their relatively smaller sizes. This paper will cover the various guidelines for PCB design that maximize the performance of eGaN FETs and reliability yet still rely on existing PCB manufacturing capabilities.

Four Ways GaN Technology Helps Save the Planet

Four Ways GaN Technology Helps Save the Planet
Apr 11 2017

Gallium nitride (GaN) is a better semiconductor than silicon. There are many crystals that are better than silicon, but the problem has always been that they are far too expensive to be used in every application where silicon is used. But, GaN can be grown as an inexpensive thin layer on top of a standard silicon wafer enabling devices that are faster, smaller, more efficient, and less costly than their aging silicon counterparts.

How we devised a wirelessly powered television set

How we devised a wirelessly powered television set
Mar 09 2017

Televisions can get their content wirelessly, but there is one set of wires they still need: those in their power cord. The consumer electronics industry has floated ideas for freeing TVs from their power cords, but this goal remains elusive. There are several reasons, such as the difficultly of meeting high-power requirements for large-screen TVs and the need for identifying an economical technology. Nevertheless, eGaN FETs could play a role in making TVs truly cordless devices.

eGaN Technology Reliability and Physics of Failure – How eGaN FETs are expected to behave as the result of high gate voltage stress conditions

eGaN Technology Reliability and Physics of Failure – How eGaN FETs are expected to behave as the result of high gate voltage stress conditions
Feb 03 2017

The previous installment in this series focused on the physics of failure surrounding thermo-mechanical reliability of EPC eGaN® wafer level chip-scale packages. A fundamental understanding of the potential failure modes under voltage bias is also important. This installment will provide an overview of the physics of failure associated with voltage bias at the gate electrode of gallium nitride (GaN) field effect transistors (FETs). Here we look at the case of taking the gate control voltage to the specified limit and beyond to investigate how eGaN FETs behave over a projected lifetime.

eGaN Technology Reliability and Physics of Failure - Thermo-mechanical board level reliability of eGaN devices

eGaN Technology Reliability and Physics of Failure - Thermo-mechanical board level reliability of eGaN devices
Jan 13 2017

The first three installments in this series covered field reliability experience and stress test qualification of Efficient Power Conversion (EPC) Corporation’s enhancement-mode gallium nitride (eGaN®) field effect transistors (FETs) and integrated circuits (ICs).  Excellent field reliability that was documented is the result of applying stress tests covering the intended operating conditions the devices will experience within applications.  Of equal importance is understanding the underlying physics of how eGaN® devices will fail when stressed beyond intended operating conditions (e.g. datasheet parameters and safe operating area).  This installment will take a deeper dive into the physics of failure centered around thermo-mechanical reliability of eGaN® wafer level chip-scale packages (WLCSP).

See, Learn, and Discuss eGaN Technology at CES 2017

See, Learn, and Discuss eGaN Technology at CES 2017
Dec 04 2016

Every year in January 2017, the world’s consumer electronics community gathers in Las Vegas at the Consumer Electronics Show (CES) to see, learn and discuss the latest innovations and products available in the world of electronics.

More than 3,800 exhibitors spread out across 2.47 million net square feet of exhibit space, is the location where over 170,000 industry professionals, 50,000 outside of the U.S. wander, ogle, and “play with” the latest electronic devices.

My Predictions for 2017

My Predictions for 2017
Nov 11 2016

In January of 2016 I made several predictions for the then-nascent year. Predictions were made for new markets such as wireless charging, augmented reality, autonomous vehicles, and advances in medical diagnostics and internet access. Progress in these markets was made on all fronts, sometimes faster and sometimes slower than anticipated. So here we are about to start a new year and, perhaps foolishly I am ready once again to predict the future.