Efficient Power Conversion (EPC) is doubling the performance distance between the aging silicon power MOSFET and eGaN® transistors with 200 V ratings. The new fifth-generation devices are about half the size of the prior generation. This performance boost comes from two main design differences, as shown in figure 1. On the left is a cross-section of the fourth generation 200 V enhancement-mode GaN-on-Si process. The cross-section on the right is the fifth-generation structure with reduced distance between gate and source electrodes and an added thick metal layer. These improvements, plus many others not shown, have doubled the performance of the new-generation FETs.