EPC9002C - Development Board

EPC9002C : 100 V Half Bridge with Gate Drive

The EPC9002C development board is a 100 V maximum device voltage, 10 A maximum output current, half bridge with onboard gate drives, featuring the EPC2001C enhancement mode (eGaN®) field effect transistor (FET).

The purpose of this development board is to simplify the evaluation process of the EPC2001C eGaN FET by including all the critical components on a single board that can be easily connected into any existing converter.

Status: Obsolete
The GaN Experts recommend EPC9097 for new designs
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EPC Development Board
* Assumes inductive load, maximum current depends on die temperature – actual maximum current will be subject to switching frequency, bus voltage and thermal cooling.
# Dependent on time needed to ‘refresh’ high side bootstrap supply voltage.