EPC9005C - Development Board

EPC9005C : 40 V Half-Bridge Development Board

EPC Development Board

The EPC9005C development board is a 40 V maximum device voltage, 7 A maximum output current, half bridge with onboard gate drives, featuring the EPC2014C enhancement mode (eGaN®) field effect transistor (FET).

The purpose of this development board is to simplify the evaluation process of the EPC2014C eGaN FET by including all the critical components on a single board that can be easily connected into any existing converter.

Status: Obsolete
Fully assembled reference design developed for testing and performance validation only, not available for sale.
For additional assistance, please contact a GaN Expert.
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EPC9005C Waveform Chart
Waveforms for operation as a 150 V to 5 V/ 12 A (100kHz) buck converter
CH1: VPWM Input voltage – CH4: (VOUT) Switch node voltage
EPC Development Board
* Assumes inductive load, maximum current depends on die temperature – actual maximum current will be subject to switching frequency, bus voltage and thermal cooling.
# Dependent on time needed to ‘refresh’ high side bootstrap supply voltage.