EPC9010C : 100 V Half-Bridge Development Board
The EPC9010C development board has a 100 V maximum device voltage, 7 A maximum output current, in a half-bridge topology with onboard gate drives, featuring the EPC2016C enhancement-mode (eGaN®) field effect transistor (FET)
The purpose of this development board is to simplify the evaluation process of the EPC2016C eGaN FET by including all the critical components on a single board that can be easily connected into any existing converter.
Status: Obsolete
The GaN Experts recommend EPC9092 for new designs