May 30, 2025 Banff, Alberta
Speaker:Shengke Zhang, Ph.D.
This paper investigates the primary wearout mechanism in Schottky-type pGaN gate high-electron-mobility transistors (HEMTs). Leveraging empirical data and physics-based insights, a first-principles lifetime model is developed that accurately predicts gate wearout under various stress conditions. The proposed model enables precise reliability forecasting for power GaN HEMTs in demanding applications such as automotive and industrial systems. Results demonstrate strong correlation with accelerated life testing, offering a robust framework for device qualification and lifetime assurance.
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