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eePower Asia 2025: Increasing Power Density using Low Voltage eGaN FETs in High-Voltage Server Power

eePower Asia 2025: Increasing Power Density using Low Voltage eGaN FETs in High-Voltage Server Power

May 27, 2025 10:15 am – 10:35 am CST (Beijing time) Online

Speaker: Pei-Cheng Huang, Field Application Engineer, EPC

Sponsored by EETimes China

The increasing power demand in data centers, led by advances in artificial intelligence, is driving the need for converters with higher power density and efficiency. These converters typically consist of two stages: a Power Factor Correction (PFC) circuit and an Isolated DC-DC converter. The PFC operates from a supply voltage of 240 VAC and generates a 400 VDC bus. The DC-DC stage down converts to 50 V while providing isolation. In addition, such power supplies must comply with the recent requirements released by the Open Compute ORV3 standard and fit within the specific form factor and dimensions.

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