Events

What a Long Strange Trip It’s Been

Speaker: Alex Lidow

GaN devices have passed the tipping point in several applications as this wonderful wide bandgap semiconductor marches toward the obsolescence of the aging silicon MOSFET. In this keynote there will be a brief trip down memory lane to recount some of the key lessons learned beginning with the power MOSFET’s takeover of the power conversion space from the incumbent bipolar transistor. Similarities and differences will be highlighted as one application after another converts from silicon to GaN transistors. The roadmap for the next few years to be discussed at the end is a reflection of these experiences.

More Information

Keynote Address: GaN Powers Up in AI, Robotics, and Our Lives

Speaker: Alex Lidow

Alex Lidow has had a front-row seat and has been a key player in many of the biggest developments in power semiconductors for decades. His current company, Efficient Power Conversion (EPC), is one of the industry leaders in developing and deploying GaN technology into power applications ranging from lidar to data centers and satellites. He joins us to discuss the history and future of GaN.

More Information

Anaheim Electronics and Manufacturing Show

October 2nd – October 3rd, 2024

Visit us at the Digi-Key booths [600-613] to discover the latest innovations in GaN technology. Learn how EPC’s cutting-edge solutions power applications in AI, robotics, and autonomous vehicles.

Don’t miss out on engaging demos, expert insights, and the opportunity to explore the future of power conversion.

More Information

Bodo’s Wide Bandgap Expert Talk - GaN Session – October 2024

October 9, 2024 (4:30 pm CEST)

A roundtable discussion with GaN industry experts hosted by Bodo’s Power Systems.
EPC Speakers: Alex Lidow, PhD., CEO and Michael de Rooij, Ph.D., Vice President of Applications Engineering.

More Information

Wurth Power Days 2024

Location: Toronto, Ontario

Thursday, October 10, 2024

A free, local, seminar put together with Würth Elektronik, EPC, Keysight and NWS. Expert talks and hand-on demonstrations.

EPC Sessions

1. Optimizing PCB layout, to take advantage of EPC GaN FETs and WE inductors (Brian Miller, Field Applications Engineer)

This presentation explores strategies for optimizing PCB layouts to maximize the performance of EPC’s GaN FETs and Wurth inductors. Key topics include minimizing parasitic inductance and resistance, improving thermal management, and enhancing efficiency and power density, showcasing how these advanced components drive innovation in power electronics.

2. Small, thin, efficient DC-DC designs with EPC’s GaN FETs and WE inductors (Brian Miller, Field Applications Engineer)

This presentation highlights designing compact, efficient DC-DC converters using EPC’s GaN FETs and Wurth inductors. Key topics include GaN technology's advantages—higher switching frequencies, lower on-resistance, and better thermal performance—and the role of Wurth inductors in enhancing high-frequency applications.

Register to Join

Wurth Power Days 2024

Location: Boxborough, Massachusetts

Tuesday, October 22, 2024

A free, local, seminar put together with Würth Elektronik, EPC, Keysight and NWS. Expert talks and hand-on demonstrations.

EPC Sessions

1. Keynote: The Future of Untethered Robotics: GaN-Powered Solutions for Mobility, AI, and Machine Vision (Alex Lidow, CEO)

As the frontier of robotics rapidly advances, untethered systems are emerging and transforming industries from manufacturing to healthcare. In this keynote, we will explore how gallium nitride (GaN) technology is revolutionizing the future of untethered robotics, enhancing mobility, AI capabilities, and machine vision.

2. Optimizing PCB layout, to take advantage of EPC GaN FETs and WE inductors (Brian Miller, Field Applications Engineer)

This presentation explores strategies for optimizing PCB layouts to maximize the performance of EPC’s GaN FETs and Wurth inductors. Key topics include minimizing parasitic inductance and resistance, improving thermal management, and enhancing efficiency and power density, showcasing how these advanced components drive innovation in power electronics.

3. Advantages of EPC’s GaN FETs and Wurth inductors in motor drive designs (Brian Miller, Field Applications Engineer)

This presentation explores the benefits of integrating EPC’s GaN FETs and Wurth inductors in motor drive systems. We’ll cover how these components enhance performance, efficiency, and reliability, offering higher switching speeds, lower losses, reduced EMI, and improved system stability for smaller, lighter, and more robust designs.

Register to Join

Visit with the EPC GaN Experts at WiPDA 2024!

Common Wear-out Mechanism of pGaN Gate in GaN HEMTs under DC and Inductive Switching Test Methods

Speaker: Shengke Zhang, Ph.D.

In this work, time-dependent gate reliability studies were carried out on GaN high-electron-mobility-transistors (HEMTs) under continuous DC gate bias (VGS) and repetitive transient gate overvoltage stress conditions. The high frequency gate overvoltage ringing stress is realized by an inductive switching test circuit. Weibull distribution analyses find the Weibull slope parameter from the DC test (VGS=10 V) is consistent with the slope parameter of the inductive switching test with a peak gate voltage of 10 V. Failure analyses were conducted on failures from both test methods, revealing consistent electrical and physical failure characteristics. By correlating the key failure characteristics from two different tests, this work establishes that impact ionization is the common wearout mechanism responsible for pGaN breakdown under DC and inductive switching test methods.

More Information

See you at electronica 2024!

Join EPC at Electronica 2024 in Munich, Germany on November 12-15, where we’ll showcase the industry’s most comprehensive portfolio of Gallium Nitride (GaN) power conversion solutions revolutionizing the way we live.

Schedule a meeting with our team of GaN Experts

Explore Our Booth (Hall B5, Stand 359)

Visit us in Hall B5, Stand 359, to experience firsthand how GaN FETs and ICs enable higher efficiency, smaller size and weight, and lower cost in applications such as DC-DC converters, motor drives, renewable energy, and more.

More Information