Thursday, March 21, 2024
9th Center for Innovative Integrated Electronic Systems Technology Forum
5,000 Watts/in3 Power Density in a 48-12 V Bi-directional DC-DC Converter for AI Servers
Thursday, March 21, 2024 - 11:10 - 11:35 a.m. Japan Standard Time (JST)
Speaker & Live Q&A Session: Dr. Michael de Rooij
GaN devices increase the power density and efficiency, reduce system cost for the DC power systems used for high-density computing applications such as AI servers. GaN® FETs and ICs provide the fast switching, small size, and high efficiency needed to provide the highest power density solutions which is the ideal solution to address the growing power needs of artificial intelligence and to support the transition to 48 V input for the new high density and high efficiency servers required for these advanced computing applications.
Details of a 1kW reference design, with performance measurements, will be presented that covers GaN device performance, transformer integration and over-coming testing challenges.
Friday, May 17, 2024 - Monday, May 20, 2024
IPEMC (International Power Electronics and Motion Control) Conference – ECCE Asia
Location: Chengdu, China
GaN Advantage over MOSFET in Inverters for Drones - An Experimental Comparison
Battery-powered UAVs are revolutionizing today’s agriculture, where they are used to spray fertilizers and more. These drones use motor drives that need to be lightweight and efficient to maximize working battery life and extend flight time between recharging. Wide-bandgap devices, and specifically Gallium Nitride (GaN) FETs, have been demonstrated to improve BLDC motor drives in e-mobility and robotic applications. This paper will present the characteristics of GaN FETs that reduce weight and improve the motor drive system efficiency.
Experimental tests were conducted on a GaN FET inverter and compared with an equivalent MOSFET inverter driving a permanent magnet motor used for unmanned Aerial Vehicle (UAV) agricultural drones. The most relevant figures of merit were characterized as a function of motor speed and power.
Tuesday, June 11, 2024 - Thursday, June 13, 2024
PCIM Europe 2024
Location: Nuremberg, Germany
Visit the GaN Experts at PCIM Europe 2024
Stop by Hall 9, Stand 318 at PCIM Europe to get the latest news on GaN technology, products, and applications. Schedule a meeting during PCIM to discuss your design by sending a request to [email protected]
EPC Presentations at PCIM Europe 2024:
Parallel Connection of GaN FETs in Low-Voltage Inverter Topology for Motor Drive Applications
PCB Only Thermal Management Techniques for eGAN® FETs in a Half-Bridge Configuration