EPC2027 eGaN® FET offers power systems designers a 450 V power transistor capable of 4ns rise times for high frequency DC-DC converters and medical diagnostic instruments.
EL SEGUNDO, Calif. — January 2015 — EPC announces the EPC2027, a 450 V normally off (enhancement mode) power transistor for use in applications requiring high frequency switching in order to achieve higher efficiency and power density. Applications enhanced by high voltage higher switching speeds include ultra-high frequency DC-DC converters, medical diagnostic equipment, solar power inverters, and LED lighting.
The EPC2027 has a voltage rating of 450 V and maximum RDS(on) of 400 mΩ with a 4 A output. It is available in passivated die form with solder bars for efficient heat dissipation and ease of assembly. The EPC2027 measures 1.95 mm x 1.95 mm for increased power density.
“As off-line adapters and inverters increasingly push toward smaller size, less weight, and higher power density, the demand for corresponding higher voltage and faster switching speeds is increasing. The 450 V EPC2027 allows power designers to increase the switching frequency of their off-line power conversion systems for increased efficiency and smaller footprint,” said Alex Lidow, EPC’s co-founder and CEO.
The EPC9044 development board, featuring the EPC2027, is in a half bridge configuration with on board gate driver, gate drive supply and bypass capacitors. This 2” x 1.5” board has been laid out for optimal switching performance and contains all critical components for easy evaluation of the EPC2027 eGaN® FET.
Price and Availability
The EPC2027 eGaN FETs are priced for 1K units at $5.81 each
The EPC9044 development boards are priced at $137.75 each
Both are available for immediate delivery from Digi-Key at https://www.digikey.com/en/supplier-centers/epc
Design Information and Support for eGaN FETs:
EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters,