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An Analysis of the Drain and Gate Overvoltage Failure Mechanisms in p-GaN HEMT Power Devices

An Analysis of the Drain and Gate Overvoltage Failure Mechanisms in p-GaN HEMT Power Devices

In this article we discuss an analysis of root cause failure mechanisms from drain and gate over-voltage stresses on p-GaN HEMT devices that are widely used in the industry. An exclusive interview with one of the authors of this study is presented in the conclusions.

Power Electronics News
October 2024
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