Efficient Power Conversion Corporation (EPC) Market Leading eGaN™ FET Named Finalist in Prestigious 2010 EDN Innovation Awards Competition
EL SEGUNDO, Calif-February 23, 2011 - Efficient Power Conversion Corporation’s EPC1010 enhancement-mode gallium nitride on silicon (eGaN™) power FET has been named a finalist in EDN’s 21st annual Innovation Awards http://innovation.edn.com/) within the Power IC’s category.
“We are proud that EDN has selected an eGaN FET product as a finalist. This selection supports our belief that performance from silicon-based MOSFETs has reached the end of the road and that eGaN technology will lead the way for continued increases in performance in power transistors.” said Alex Lidow, EPC’s co-founder and Chief Executive Officer.
EDN readers participate in the determination of the ultimate winners. Voting takes place now through March 31, 2011 via an online ballot to select the ultimate winners from among the finalists. We encourage you to visit http://innovation.edn.com/nomination/epc1010-gan-fet to vote.
About eGaN FETs
The EPC1010 was selected as a finalist due to its performance advantages over silicon-based power MOSFETs. EPC’s eGaN devices are smaller than silicon devices having similar resistance with superior switching performance. The EPC1010 has a 200V breakdown and 100mO of on resistance. The eGaN family of products has a range of 40 Volts to 200 Volts and 4 milliohms to 100 milliohms.
The parts find use in dc-dc power supplies including point-of-load converters, PoE (power over Ethernet), notebook and netbook computers, and telecom base stations. Other applications include LED drive circuits, solar micro-inverters, and class D audio amplifiers.
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EPC is the leader in enhancement mode Gallium Nitride based power management devices. EPC is the first to introduce enhancement-mode Gallium-Nitride-on-Silicon (eGaN™) FETs as power MOSFET replacements in applications such as servers, netbooks, notebooks, LED lighting, cell phones, base stations, Microinverters, and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
Press contact: Joe Engle tel: 310.986.0350 email: [email protected]