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U.S. International Trade Commission Finds Key EPC Patents Valid and Foundational Patent Infringed by Innoscience

U.S. International Trade Commission Finds Key EPC Patents Valid and Foundational Patent Infringed by Innoscience

Agency’s Recommendation Validates EPC’s Proprietary GaN Technology Core to Powering Rapid Development of AI, Satellites, Humanoid Robots and Autonomous Driving

El Segundo, CA – July 8, 2024 – Efficient Power Conversion (EPC), a rapidly growing and innovative company, announced today that it has moved one step closer to achieving preeminence in the gallium nitride (GaN) power semiconductor industry, as its intellectual property rights to this revolutionary technology were upheld for the third time in three months. The next-generation wide bandgap semiconductors developed by EPC are essential to artificial intelligence (AI), satellites, fast chargers, lidar, humanoid robots and many other transformational technologies.

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PCIM Europe 2024: A Conversation with Alex Lidow, CEO of EPC

PCIM Europe 2024: A Conversation with Alex Lidow, CEO of EPC

Video: Alex Lidow discusses the latest trends in power electronics showcased at the PCIM conference, the evolution of GaN technology, and its impact on sustainability and energy costs. He also shares insights on overcoming technological and regulatory hurdles and forecasts future innovations that will shape the power electronics market.

Power Electronics News
June, 2024
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GaN ICs simplify Motor Joint Inverter Design for Humanoid Robots

GaN ICs simplify Motor Joint Inverter Design for Humanoid Robots

Battery-powered applications such as new-generation robots, drones, and power tools require a reduction in space and a simplification of the design to control electric motors. Optimizing size and components results in innovative solutions that include more functions in a small space without losing efficiency and performance. EPC ePower™ Stage ICs technology helps to simplify and improve the inverter design in advanced motor control applications.

Bodo’s Power Systems
June, 2024
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Advancements in USB Power Delivery: GaN Technology for Efficiency and High-Power Density

Advancements in USB Power Delivery: GaN Technology for Efficiency and High-Power Density

The first Universal Serial Bus (USB) specification, released in 1996, aimed to standardize power delivery and connectivity in computing and telecommunication industries [1]. Initially supporting a 5 V power bus with up to 5 A of current (25 W) and maximum data transfer rates of 12 Mbit/s, USB has evolved significantly due to the proliferation of electronic devices, leading to a demand for higher power capabilities.

Bodo’s Power Systems
May, 2024
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Design Higher Power Density USB-C PD Applications with New 50 V GaN FET in Tiny 1.8 mm2 Footprint from EPC

Design Higher Power Density USB-C PD Applications with New 50 V GaN FET in Tiny 1.8 mm2 Footprint from EPC

EPC introduces the 50 V, 8.5 mOhm EPC2057 GaN FET in tiny 1.5 mm x 1.2 mm footprint, offering higher power density for USB-C PD applications.

EL SEGUNDO, Calif.— June 2024 — EPC, the world’s leader in enhancement-mode gallium nitride (GaN) power FETs and ICs, launches the 50 V, 8.5 mΩ EPC2057. This GaN FET is specifically designed to meet the evolving needs of high-power USB-C devices including those used in consumer electronics, in-car charging, and eMobility.

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EPC Showcases Cutting-Edge Power Electronics Solutions for Automotive, Robotics, Power Tools, Solar, and More at PCIM Europe 2024

EPC Showcases Cutting-Edge Power Electronics Solutions for Automotive, Robotics, Power Tools, Solar, and More at PCIM Europe 2024

EPC’s GaN Experts will be available during PCIM Europe, showcasing the latest generation of GaN FETs and ICs in a wide variety of real-world applications.

EL SEGUNDO, Calif. — May 2024 — EPC, the world’s leader in enhancement-mode gallium nitride (GaN) FETs and ICs, is proud to announce its participation in PCIM Europe, the international leading exhibition and conference for Power Electronics, Intelligent Motion, Renewable Energy, and Energy Management. The event, held from 11 June to 13 June in Nuremburg, Germany, brings together industry experts and thought leaders to explore the latest advancements in power electronics and motion control.

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CNIPA Validates EPC's GaN Gate Semiconductor Technology Patent

CNIPA Validates EPC's GaN Gate Semiconductor Technology Patent

El Segundo, CA – May 6, 2024 – Efficient Power Conversion Corp (“EPC”) announced today that the China National Intellectual Property Administration (“CNIPA”) has validated the claims of EPC patent titled “Compensated gate MISFET and method for fabricating the same” (Chinese Patent No. ZL201080015425.X) for enhancement-mode GaN semiconductor devices.

The decision on April 30, 2024 follows an April 2, 2024 announcement from the CNIPA that confirmed the validity of key claims of EPC’s Chinese patent titled “Enhancement mode GaN HEMT device and method for fabricating the same” (Chinese Patent No. ZL201080015388.2). Both EPC patents were challenged by Innoscience (Suzhou) Technology Co., Ltd. (“Innoscience”). 

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Design High-Performance Class-D Audio Amplifiers with GaN FETs

Design High-Performance Class-D Audio Amplifiers with GaN FETs

The EPC9192 Class-D audio reference design enables high power and high efficiency in a modular design for customization and high performance.

EL SEGUNDO, Calif.— April, 2024 — EPC is pleased to announce the launch of the EPC9192, reference design enabling powerful, compact, and efficient Class-D audio amplifiers. The EPC9192 showcases the capabilities of EPC's 200 V, EPC2307, eGaN FETs in a ground-referenced, split dual supply Single-Ended (SE) design, delivering an impressive 700 W per channel into a 4 Ω load.

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CNIPA Validates Key Claims of EPC’s GaN Power Technology Patent

CNIPA Validates Key Claims of EPC’s GaN Power Technology Patent

根据国家知识产权局官网20204年4月2日的消息,宜普电源转换公司(Efficient Power Conversion Corporation, EPC,以下简称宜普公司)一件名为“增强型GaN高电子迁移率晶体管器件及其制备方法”的专利(专利号ZL201080015388.2)的核心权利要求6、9、10、13、14、17、18、22-26在无效程序(案件编号:4W116775)中被维持有效。该件专利的无效请求人是英诺赛科(苏州)科技有限公司(以下简称英诺赛科公司)。

According to the information on the official website of the China National Intellectual Property Administration (CNIPA) on April 2, 2024, the key claims 6, 9, 10, 13, 14, 17, 18 and 22-26 of the Chinese patent titled “Enhancement mode GaN HEMT device and method for fabricating the same” (Patent No. ZL201080015388.2) owned by Efficient Power Conversion Corp (“EPC”) have been maintained valid during an invalidation procedure (case number: 4W116775), which was requested by the petitioner Innoscience (Suzhou) Technology Co., Ltd. (“Innoscience”).

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Cascade of Power

Cascade of Power

Power semiconductors are used across many areas of e-mobility, with different technologies suitable for each part of a vehicle, depending on the voltage and current requirements, while emerging tech is allowing smaller systems to be implemented. With GaN and SiC technologies maturing and coming down in price, adoption is growing, and the technologies are increasingly dominating the design and development of e-mobility powertrain and power systems.

E-Mobility Engineering
March 2024
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GaN for Low-cost e-bikes, Drones, and Robotics

GaN for Low-cost e-bikes, Drones, and Robotics

The EPC9193 GaN-based inverter reference design enhances motor system performance, range, precision, torque, all while lowering overall system cost.

EL SEGUNDO, Calif.— March, 2024 — EPC announces the availability of the EPC9193, a 3-phase BLDC motor drive inverter using the EPC2619 eGaN® FET. The EPC9193 operates with a wide input DC voltage ranging from 14 V and 65 V and has two configurations – a standard unit and a high current version:

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Forecasting System Reliability in Real-World Mission Profiles in EPC’s Phase 16 Report on GaN Reliability

Forecasting System Reliability in Real-World Mission Profiles in EPC’s Phase 16 Report on GaN Reliability

Efficient Power Conversion (EPC) publishes Phase-16 Reliability Report adding new findings to the extensive knowledge base on GaN reliability and mission robustness.

EL SEGUNDO, Calif.— March 2024 — EPC announces the publication of its Phase-16 Reliability Report, documenting continued work using test-to-fail methodology and adding specific guidelines for overvoltage specifications and improving thermo-mechanical reliability.

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Experts Weigh in on GaN & SiC at APEC 2024

Experts Weigh in on GaN & SiC at APEC 2024

In this video from Power Electronics News, a lineup of distinguished speakers from semiconductor companies shares insights into groundbreaking developments in gallium nitride– and silicon carbide–based power devices.

The GaN speakers address two critical questions shaping the future of wide bandgap:

  1. The significance of substrate material choice for GaN-based power devices. They elaborate on how this choice impacts device performance, reliability and manufacturability and discuss how researchers are tackling substrate-related challenges.
  2. Specific market segments where GaN devices are outperforming traditional silicon-based solutions, driving adoption and revealing the technology direction of their respective companies. The speakers include:
    • Robert Taylor, applications engineer/general manager industrial applications at Texas Instruments
    • Michael de Rooij, VP of applications engineering at EPC
    • Balu Balakrishnan, CEO of Power Integrations

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First GaN FET with 1 Milliohms On-Resistance Announced by EPC

First GaN FET with 1 Milliohms On-Resistance Announced by EPC

EPC introduces the 100 V, 1 mOhm EPC2361 GaN FET in compact 3 mm x 5 mm QFN package, offering higher power density for DC-DC conversion, fast charging, motor drives, and solar MPPTs.

EL SEGUNDO, Calif.— February 2024 — EPC, the world’s leader in enhancement-mode gallium nitride (GaN) power FETs and ICs, launches the 100 V, 1 mOhm EPC2361. This is the lowest on-resistance GaN FET on the market offering double the power density compared to EPC’s prior-generation products.

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Using GaN FETs with Controllers and Gate Drivers Designed for Silicon MOSFETs

Using GaN FETs with Controllers and Gate Drivers Designed for Silicon MOSFETs

Gallium Nitride (GaN) FETs have revolutionized the power electronics industry, offering advantages such as smaller size, faster switching, higher efficiency, and lower costs compared to traditional silicon MOSFETs. However, the rapid evolution of GaN technology has sometimes outpaced the development of dedicated GaN-specific gate drivers and controllers. Consequently, circuit designers often turn to generic gate drivers designed for silicon MOSFETs, necessitating careful consideration of various factors to ensure optimal performance.

Bodo’s Power Systems
February, 2024
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EPC GaN FETs Deliver Benchmark Power Density and Efficiency for DC/DC Conversion

EPC GaN FETs Deliver Benchmark Power Density and Efficiency for DC/DC Conversion

EPC GaN FETs leverage drivers and controllers by Analog Devices to simplify GaN design, increase efficiency, reduce cooling cost, and help enable the highest power density for computing, industrial, and consumer DC/DC converters.

EL SEGUNDO, Calif.— January, 2024— EPC announces the availability of several reference designs that feature EPC GaN FETs and Analog Devices, Inc. (ADI) controllers.

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GaN FETs Enable 75 - 231 Ampere Laser Diode Control in Nanoseconds for Advanced Automotive Autonomy

GaN FETs Enable 75 - 231 Ampere Laser Diode Control in Nanoseconds for Advanced Automotive Autonomy

EPC launches three laser driver boards showcasing AEC-Q101 qualified GaN FETs' rapid transition for superior LiDAR system performance.

EL SEGUNDO, Calif.— December 2023 — EPC introduces three evaluation boards - EPC9179, EPC9181, and EPC9180 - featuring pulse current laser drivers of  75 A, 125 A, and 231 A , showcasing EPC’s AEC-Q101 GaN FETs. These FETs; EPC2252, EPC2204A, and EPC2218A are 30% smaller and more cost-effective than their predecessors. Designed for both long and short-range automotive lidar systems, these boards expedite solution evaluation with varied input and output options.

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EPC to Showcase GaN-enabled Consumer Applications – eMobility, Drones, Robotics, and more at CES 2024

EPC to Showcase GaN-enabled Consumer Applications – eMobility, Drones, Robotics, and more at CES 2024

EPC gallium nitride (GaN) experts will be at Consumer Electronics Show (CES) to share how GaN enables enhanced features and performance in consumer electronics.

EL SEGUNDO, Calif – December 2023 – EPC, the global leader in enhancement-mode gallium nitride (eGaN®) FETs and ICs, will be showcasing the capabilities of GaN technology at CES 2024, demonstrating its role in enhancing features and performance in consumer electronics. This includes delivering higher efficiency, smaller size, and lower cost solutions.

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