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EPC Confident in Strong Legal Position Amid USPTO’s Preliminary Decision; ITC Import Ban on Innoscience Products Remains in Place

EPC Confident in Strong Legal Position Amid USPTO’s Preliminary Decision; ITC Import Ban on Innoscience Products Remains in Place

El Segundo, CA – March 2025 – EPC is pleased to announce that the United States Patent Office, in a decision issued in IPR2023-01381, has strengthened the ’294 patent by adding two new patent claims that are fundamental to commercial enhancement-mode GaN devices. While the USPTO also cancelled two claims that were the basis for the ITC’s infringement decision against Innoscience, EPC will appeal the USPTO’s cancellation of its claims. Historically, EPC’s patents have been upheld in multiple jurisdictions, including both the U.S. and China, reinforcing EPC’s expectation that the final outcome will ultimately be in its favor.

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EPC Announces New Benchmark for 100 V GaN Power Transistors

EPC Announces New Benchmark for 100 V GaN Power Transistors
EPC launches EPC2367, a 100 V GaN FET with ultra-low 1.2 mΩ RDS(on), superior efficiency, and thermal performance, advancing AI, robotics, and automotive power.

El Segundo, CA — March 2025 – Efficient Power Conversion (EPC), the leader in enhancement-mode gallium nitride (GaN) power transistors and ICs, introduces the EPC2367, a next-generation 100 V eGaN® FET that delivers superior performance, higher efficiency, and lower system costs for power conversion applications.

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EPC Releases Phase 17 Reliability Report: Advancing GaN Reliability and Lifetime Projections

EPC Releases Phase 17 Reliability Report: Advancing GaN Reliability and Lifetime Projections

EL SEGUNDO, Calif. — February 2025 — EPC, the leader in gallium nitride (GaN) power devices, announces the release of its Phase 17 Reliability Report, further solidifying GaN’s position as a highly reliable technology for power electronics, automotive, AI, space, and industrial applications.

The latest reliability report introduces expanded lifetime models, mission-specific reliability projections, and new physics-based wear-out mechanisms, providing engineers with more accurate and practical reliability data for GaN power devices.

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Increasing Power Density using Low Voltage eGaN FETs in High-Voltage Server Power Supplies – Part 1

Increasing Power Density using Low Voltage eGaN FETs in High-Voltage Server Power Supplies – Part 1

This part 1 article presents an overview of using low voltage GaN devices in high voltage applications, with examples of a 240 VAC source 5 kW totem pole PFC and 400 VDC to 50 VDC isolated LLC converter. A FOM analysis revealed significant improvement in performance can be achieved using lower voltage devices. The benefits extend to increased power density through reduced magnetic component size and lower EMI filter requirements.

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EPC to Showcase GaN-Powered Innovations for AI, Robotics and High-Density Power Conversion Applications at APEC 2025

EPC to Showcase GaN-Powered Innovations for AI, Robotics and High-Density Power Conversion Applications at APEC 2025

EPC’s GaN Experts will be available during APEC, showcasing the latest generation of GaN FETs and ICs in a wide variety of applications.

EL SEGUNDO, Calif. — February 2025 — EPC, the world’s leader in enhancement-mode gallium nitride (GaN)-based power solutions, is set to highlight cutting-edge advancements in AI, robotics, and other high-density power conversion applications at the Applied Power Electronics Conference (APEC) 2025. During the event, held from March 16 to March 20 in Atlanta, GA, EPC will focus on demonstrating how GaN is revolutionizing AI infrastructure, humanoid robotics, industrial and consumer applications in booth 1231.

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Optimizing PCB Thermal Design for GaN FETs: A Guide for Power Electronics Engineers

Optimizing PCB Thermal Design for GaN FETs: A Guide for Power Electronics Engineers

Gallium nitride (GaN) field-effect transistors (FETs) have revolutionized power electronics with their superior performance characteristics. However, like all power devices, heat management remains critical. Effective thermal design at the printed circuit board (PCB) level can substantially improve cooling without the need for a heatsink. This article presents simple thermal management guidelines maximizing heat conduction from the GaN FETs to the environment using just the PCB and optimizes thermal performance without the use of a heatsink.

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Moore’s Lobby: GaN Powers Up in AI, Robotics, and Our Lives

Moore’s Lobby: GaN Powers Up in AI, Robotics, and Our Lives

Alex Lidow, CEO of Efficient Power Conversion (EPC), describes his journey in the semiconductor industry, his family’s legacy, and groundbreaking innovations in gallium nitride technology.

In this podcast Alex Lidow, CEO of EPC shares his journey in semiconductors and how he founded EPC to focus on GaN technology, recognizing its superior efficiency and potential over silicon. Looking ahead, Alex expresses excitement about emerging applications, such as humanoid robots, where GaN’s integration in motors, AI, and lidar could revolutionize industries.

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Understanding The Role of Drivers, Switches, and Laser Diodes for Effective LiDAR Performance

Understanding The Role of Drivers, Switches, and Laser Diodes for Effective LiDAR Performance

Light detection and ranging (LiDAR) systems have become the preferred method for enabling an automobile, an automated guided vehicle (AGV), or even a robotic vacuum to “see” its surroundings. Drones and higher-flying aircraft also use LiDAR to navigate and map terrain at greater distances. Though LiDAR has been well studied, designers must exercise great care when selecting key components such as the gate driver, the gate-switch FET, and the laser diode necessary to create the optical pulses. This article provides an overview of LiDAR. It then presents examples of the critical electro-optical components and shows how they work together to generate the necessary pulses.

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EPC Announces 4th Edition of ‘GaN Power Devices for Efficient Power Conversion’ Book

EPC Announces 4th Edition of ‘GaN Power Devices for Efficient Power Conversion’ Book

EL SEGUNDO, Calif.— February 2025 — Efficient Power Conversion Corporation (EPC), the world leader in enhancement-mode gallium nitride (eGaN®) power devices is pleased to announce the release of the 4th edition of its groundbreaking textbook, GaN Power Devices for Efficient Power Conversion.

This latest edition reflects the rapid advancements in GaN technology and its transformative impact across various industries, including renewable energy, electric vehicles, data centers, robotics, and space applications. Co-authored by EPC CEO Dr. Alex Lidow and a team of GaN experts, the textbook remains an indispensable resource for engineers, students, and industry innovators looking to stay at the forefront of power electronics.

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The Emergence of Humanoid Robots & their Demands for Advanced Electronics

The Emergence of Humanoid Robots & their Demands for Advanced Electronics

Society is undergoing a rapid transformation in automation, with humanoid robots emerging as a revolutionary way of addressing labour shortages, especially in developed countries with aging populations and declining birth rates. Designed to mimic human form and function, such robots are increasingly being integrated into healthcare, manufacturing and service industries. This article looks at how their complex operations will be powered.

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New GaN-Based Motor Drive Reference Design Optimized for Precision Motion in Humanoid Robots

New GaN-Based Motor Drive Reference Design Optimized for Precision Motion in Humanoid Robots

The EPC91104 provides a versatile reference design, with optimized PCB layout, for wide input voltage range motor drive applications

EL SEGUNDO, Calif.— January 2025 — Efficient Power Conversion Corporation (EPC), the world leader in enhancement-mode gallium nitride (eGaN®) power devices announces the launch of the EPC91104, a high-performance 3-phase BLDC motor drive inverter reference design. This innovative design is ideal for powering compact, precision motors in humanoid robots, such as those used for wrist, finger, and toe movements.

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Design with GaN for High-Performance Motor Drives for High-Voltage Battery Applications

Design with GaN for High-Performance Motor Drives for High-Voltage Battery Applications

The EPC91200 provides a versatile reference design, with optimized PCB layout, for wide input voltage range motor drive applications

EL SEGUNDO, Calif.— January 2025 — Efficient Power Conversion Corporation (EPC), the world leader in enhancement-mode gallium nitride (eGaN®) power devices introduces the EPC91200, a fully configured motor drive inverter reference design that delivers exceptional performance and flexibility for a variety of industrial and battery-powered applications.

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U.S. ITC Confirms Patent Infringement by Innoscience Following Presidential Review Period

U.S. ITC Confirms Patent Infringement by Innoscience Following Presidential Review Period

ITC import and sales ban on Innoscience products now in effect

El Segundo, CA – January 7, 2025 – Efficient Power Conversion (EPC) today announced the conclusion of the Presidential review period for the U.S. International Trade Commission’s (ITC) final determination, affirming that Innoscience (Zhuhai) Technology Co., Ltd. and its affiliates (Innoscience) infringed EPC’s foundational patent for GaN technology. The ITC’s decision is now final, implementing an import and sales ban on Innoscience products in the United States without a license from EPC.

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EPC Space Achieves GaN JANS MIL-PRF-19500 Certification

EPC Space Achieves GaN JANS MIL-PRF-19500 Certification

Andover, Massachusetts and El Segundo California – December 2024 – EPC Space, a leader in radiation-hardened (Rad Hard) GaN-on-silicon transistors and ICs, is pleased to announce that both its Andover, Massachusetts facility and its wafer fabrication facility in Taiwan have been certified under the JANS MIL-PRF-19500 standard.

This certification marks a significant milestone, highlighting EPC Space's commitment to excellence and its role as a leader in providing top-tier semiconductor solutions for critical space applications. The MIL-PRF-19500 certification, managed by the U.S. Department of Defense, sets the bar for reliability, performance, and environmental resilience in semiconductor components. EPC Space's achievement in obtaining this certification for Gallium Nitride (GaN) High Electron Mobility Transistors (HEMT) is a world first.

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Design High-Efficiency Solar Optimizers with GaN FETs

Design High-Efficiency Solar Optimizers with GaN FETs

Enhancing Photovoltaic System Performance with Compact, Reliable, Cost-Effective GaN Technology

EL SEGUNDO, Calif.— December, 2024 — Efficient Power Conversion Corporation (EPC), the world leader in enhancement-mode gallium nitride (eGaN®) power devices, proudly announces the launch of the EPC9178, the latest reference design for photovoltaic (PV) optimizers. Designed to deliver high reliability while addressing critical challenges in energy efficiency and cost-effectiveness through the reduction of passive components in solar energy systems, the EPC9178 demonstrates the transformative potential of GaN technology for renewable energy solutions.

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GaN and the Future of Untethered Robots

GaN and the Future of Untethered Robots

At electronica 2024, on the DigiKey booth, Caitlin Gittins spoke with Alex Lidow, CEO, EPC about GaN and the future of untethered robots. After introducing EPC and explaining the unique benefits of GaN compared to traditional silicon-based semiconductors, the conversation explores EPC’s specific GaN solutions and their applications in robotics. The discussion touches on the concept of humanoid robots, contrasting them with conventional robotic arms, and EPC’s outlook on robotics’ future. It examines how GaN is advancing the robotics industry by enhancing autonomy and efficiency and discuss EPC’s recommendations for developers adopting GaN in their designs. The conversation concludes with how EPC is positioning itself to meet the evolving demands of robotics and AI-driven humanoid robots.

Electronic Specifier
November, 2024
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EPC Prevails as U.S. ITC Affirms Determination of Patent Infringement by Innoscience

EPC Prevails as U.S. ITC Affirms Determination of Patent Infringement by Innoscience

Commission Orders Import and Sales Ban of Innoscience Products

El Segundo, CA – November 8, 2024 – Efficient Power Conversion (EPC) announced today that the Full Commission of the U.S. International Trade Commission (ITC) has affirmed the ITC’s initial determination that Innoscience infringed EPC’s foundational patent for GaN technology, which is core to applications involving artificial intelligence, satellites, rapid chargers, humanoid robots, and autonomous driving, among others. The decision imposes a ban on Innoscience (Zhuhai) Technology Co., Ltd. and its affiliates (Innoscience) from importing GaN-related products into the United States without a license from EPC.

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Compact, High Performance, Next Generation PV Optimizers using eGaN FETs and dedicated ASIC Controller

Compact, High Performance, Next Generation PV Optimizers using eGaN FETs and dedicated ASIC Controller

The adoption of photovoltaic (PV) systems continues to grow, and the ever-present pressure on manufacturers drives innovation and the adoption of new technologies to reduce cost without compromising reliability. As renewable energy systems continue to evolve, the use of innovative technologies like GaN FETs will be key to driving further improvements in cost, performance, and reliability across the industry.

Bodo’s Power Systems
November 2024
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