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Design High-Efficiency Solar Optimizers with GaN FETs

Design High-Efficiency Solar Optimizers with GaN FETs

Enhancing Photovoltaic System Performance with Compact, Reliable, Cost-Effective GaN Technology

EL SEGUNDO, Calif.— December, 2024 — Efficient Power Conversion Corporation (EPC), the world leader in enhancement-mode gallium nitride (eGaN®) power devices, proudly announces the launch of the EPC9178, the latest reference design for photovoltaic (PV) optimizers. Designed to deliver high reliability while addressing critical challenges in energy efficiency and cost-effectiveness through the reduction of passive components in solar energy systems, the EPC9178 demonstrates the transformative potential of GaN technology for renewable energy solutions.

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GaN and the Future of Untethered Robots

GaN and the Future of Untethered Robots

At electronica 2024, on the DigiKey booth, Caitlin Gittins spoke with Alex Lidow, CEO, EPC about GaN and the future of untethered robots. After introducing EPC and explaining the unique benefits of GaN compared to traditional silicon-based semiconductors, the conversation explores EPC’s specific GaN solutions and their applications in robotics. The discussion touches on the concept of humanoid robots, contrasting them with conventional robotic arms, and EPC’s outlook on robotics’ future. It examines how GaN is advancing the robotics industry by enhancing autonomy and efficiency and discuss EPC’s recommendations for developers adopting GaN in their designs. The conversation concludes with how EPC is positioning itself to meet the evolving demands of robotics and AI-driven humanoid robots.

Electronic Specifier
November, 2024
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EPC Prevails as U.S. ITC Affirms Determination of Patent Infringement by Innoscience

EPC Prevails as U.S. ITC Affirms Determination of Patent Infringement by Innoscience

Commission Orders Import and Sales Ban of Innoscience Products

El Segundo, CA – November 8, 2024 – Efficient Power Conversion (EPC) announced today that the Full Commission of the U.S. International Trade Commission (ITC) has affirmed the ITC’s initial determination that Innoscience infringed EPC’s foundational patent for GaN technology, which is core to applications involving artificial intelligence, satellites, rapid chargers, humanoid robots, and autonomous driving, among others. The decision imposes a ban on Innoscience (Zhuhai) Technology Co., Ltd. and its affiliates (Innoscience) from importing GaN-related products into the United States without a license from EPC.

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Compact, High Performance, Next Generation PV Optimizers using eGaN FETs and dedicated ASIC Controller

Compact, High Performance, Next Generation PV Optimizers using eGaN FETs and dedicated ASIC Controller

The adoption of photovoltaic (PV) systems continues to grow, and the ever-present pressure on manufacturers drives innovation and the adoption of new technologies to reduce cost without compromising reliability. As renewable energy systems continue to evolve, the use of innovative technologies like GaN FETs will be key to driving further improvements in cost, performance, and reliability across the industry.

Bodo’s Power Systems
November 2024
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EPC to Showcase Advanced GaN Power Solutions at PCIM Asia 2024

EPC to Showcase Advanced GaN Power Solutions at PCIM Asia 2024

EPC’s GaN Experts will be available during PCIM Asia, showcasing the latest generation of GaN FETs and ICs in a wide variety of real-world applications including AI servers, robotics, and more.

EL SEGUNDO, Calif. — August 2024 — EPC, the world’s leader in enhancement-mode gallium nitride (GaN) FETs and ICs, is excited to announce its participation in PCIM Asia 2024. The event will take place from August 28-30 in Shenzhen, China. Attendees are invited to visti EPC at Hall 11, Stand F01 to explore the industry’s most comprehensive portfolio of GaN power conversion solutions.

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U.S. International Trade Commission Finds Key EPC Patents Valid and Foundational Patent Infringed by Innoscience

U.S. International Trade Commission Finds Key EPC Patents Valid and Foundational Patent Infringed by Innoscience

Agency’s Recommendation Validates EPC’s Proprietary GaN Technology Core to Powering Rapid Development of AI, Satellites, Humanoid Robots and Autonomous Driving

El Segundo, CA – July 8, 2024 – Efficient Power Conversion (EPC), a rapidly growing and innovative company, announced today that it has moved one step closer to achieving preeminence in the gallium nitride (GaN) power semiconductor industry, as its intellectual property rights to this revolutionary technology were upheld for the third time in three months. The next-generation wide bandgap semiconductors developed by EPC are essential to artificial intelligence (AI), satellites, fast chargers, lidar, humanoid robots and many other transformational technologies.

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PCIM Europe 2024: A Conversation with Alex Lidow, CEO of EPC

PCIM Europe 2024: A Conversation with Alex Lidow, CEO of EPC

Video: Alex Lidow discusses the latest trends in power electronics showcased at the PCIM conference, the evolution of GaN technology, and its impact on sustainability and energy costs. He also shares insights on overcoming technological and regulatory hurdles and forecasts future innovations that will shape the power electronics market.

Power Electronics News
June, 2024
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GaN ICs simplify Motor Joint Inverter Design for Humanoid Robots

GaN ICs simplify Motor Joint Inverter Design for Humanoid Robots

Battery-powered applications such as new-generation robots, drones, and power tools require a reduction in space and a simplification of the design to control electric motors. Optimizing size and components results in innovative solutions that include more functions in a small space without losing efficiency and performance. EPC ePower™ Stage ICs technology helps to simplify and improve the inverter design in advanced motor control applications.

Bodo’s Power Systems
June, 2024
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Advancements in USB Power Delivery: GaN Technology for Efficiency and High-Power Density

Advancements in USB Power Delivery: GaN Technology for Efficiency and High-Power Density

The first Universal Serial Bus (USB) specification, released in 1996, aimed to standardize power delivery and connectivity in computing and telecommunication industries [1]. Initially supporting a 5 V power bus with up to 5 A of current (25 W) and maximum data transfer rates of 12 Mbit/s, USB has evolved significantly due to the proliferation of electronic devices, leading to a demand for higher power capabilities.

Bodo’s Power Systems
May, 2024
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Design Higher Power Density USB-C PD Applications with New 50 V GaN FET in Tiny 1.8 mm2 Footprint from EPC

Design Higher Power Density USB-C PD Applications with New 50 V GaN FET in Tiny 1.8 mm2 Footprint from EPC

EPC introduces the 50 V, 8.5 mOhm EPC2057 GaN FET in tiny 1.5 mm x 1.2 mm footprint, offering higher power density for USB-C PD applications.

EL SEGUNDO, Calif.— June 2024 — EPC, the world’s leader in enhancement-mode gallium nitride (GaN) power FETs and ICs, launches the 50 V, 8.5 mΩ EPC2057. This GaN FET is specifically designed to meet the evolving needs of high-power USB-C devices including those used in consumer electronics, in-car charging, and eMobility.

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EPC Showcases Cutting-Edge Power Electronics Solutions for Automotive, Robotics, Power Tools, Solar, and More at PCIM Europe 2024

EPC Showcases Cutting-Edge Power Electronics Solutions for Automotive, Robotics, Power Tools, Solar, and More at PCIM Europe 2024

EPC’s GaN Experts will be available during PCIM Europe, showcasing the latest generation of GaN FETs and ICs in a wide variety of real-world applications.

EL SEGUNDO, Calif. — May 2024 — EPC, the world’s leader in enhancement-mode gallium nitride (GaN) FETs and ICs, is proud to announce its participation in PCIM Europe, the international leading exhibition and conference for Power Electronics, Intelligent Motion, Renewable Energy, and Energy Management. The event, held from 11 June to 13 June in Nuremburg, Germany, brings together industry experts and thought leaders to explore the latest advancements in power electronics and motion control.

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CNIPA Validates EPC's GaN Gate Semiconductor Technology Patent

CNIPA Validates EPC's GaN Gate Semiconductor Technology Patent

El Segundo, CA – May 6, 2024 – Efficient Power Conversion Corp (“EPC”) announced today that the China National Intellectual Property Administration (“CNIPA”) has validated the claims of EPC patent titled “Compensated gate MISFET and method for fabricating the same” (Chinese Patent No. ZL201080015425.X) for enhancement-mode GaN semiconductor devices.

The decision on April 30, 2024 follows an April 2, 2024 announcement from the CNIPA that confirmed the validity of key claims of EPC’s Chinese patent titled “Enhancement mode GaN HEMT device and method for fabricating the same” (Chinese Patent No. ZL201080015388.2). Both EPC patents were challenged by Innoscience (Suzhou) Technology Co., Ltd. (“Innoscience”). 

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Design High-Performance Class-D Audio Amplifiers with GaN FETs

Design High-Performance Class-D Audio Amplifiers with GaN FETs

The EPC9192 Class-D audio reference design enables high power and high efficiency in a modular design for customization and high performance.

EL SEGUNDO, Calif.— April, 2024 — EPC is pleased to announce the launch of the EPC9192, reference design enabling powerful, compact, and efficient Class-D audio amplifiers. The EPC9192 showcases the capabilities of EPC's 200 V, EPC2307, eGaN FETs in a ground-referenced, split dual supply Single-Ended (SE) design, delivering an impressive 700 W per channel into a 4 Ω load.

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CNIPA Validates Key Claims of EPC’s GaN Power Technology Patent

CNIPA Validates Key Claims of EPC’s GaN Power Technology Patent

根据国家知识产权局官网20204年4月2日的消息,宜普电源转换公司(Efficient Power Conversion Corporation, EPC,以下简称宜普公司)一件名为“增强型GaN高电子迁移率晶体管器件及其制备方法”的专利(专利号ZL201080015388.2)的核心权利要求6、9、10、13、14、17、18、22-26在无效程序(案件编号:4W116775)中被维持有效。该件专利的无效请求人是英诺赛科(苏州)科技有限公司(以下简称英诺赛科公司)。

According to the information on the official website of the China National Intellectual Property Administration (CNIPA) on April 2, 2024, the key claims 6, 9, 10, 13, 14, 17, 18 and 22-26 of the Chinese patent titled “Enhancement mode GaN HEMT device and method for fabricating the same” (Patent No. ZL201080015388.2) owned by Efficient Power Conversion Corp (“EPC”) have been maintained valid during an invalidation procedure (case number: 4W116775), which was requested by the petitioner Innoscience (Suzhou) Technology Co., Ltd. (“Innoscience”).

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Cascade of Power

Cascade of Power

Power semiconductors are used across many areas of e-mobility, with different technologies suitable for each part of a vehicle, depending on the voltage and current requirements, while emerging tech is allowing smaller systems to be implemented. With GaN and SiC technologies maturing and coming down in price, adoption is growing, and the technologies are increasingly dominating the design and development of e-mobility powertrain and power systems.

E-Mobility Engineering
March 2024
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